A display device may include a substrate, a barrier layer disposed on the substrate and having a trench, an active pattern disposed on the barrier layer, formed of an oxide semiconductor, and including a channel region protruding downward along a profile of the trench, and a source region and a drain region disposed at each end of the channel region, respectively, a gate electrode disposed on the active pattern and overlapping the channel region, a source electrode disposed on the gate electrode and electrically connected to the source region, and a drain electrode disposed on the gate electrode and electrically connected to the drain region.

A display device includes: a substrate; a first active layer of a first transistor and a second active layer of a second transistor on the substrate; a first gate insulating layer on the first active layer; a first gate electrode on the first gate insulating layer; a second gate insulating layer on the second active layer; and a second gate electrode on the second gate insulating layer, wherein a hydrogen concentration of the first gate insulating layer is lower than a hydrogen concentration of the second gate insulating layer.

Disclosed is a display device which includes a base layer, a first metal layer disposed on the base layer and disposed in a first area, an inorganic layer disposed on the base layer and disposed in a second area, and a second metal layer disposed on the first metal layer and the inorganic layer. A depression portion adjacent to the first metal layer and formed in a thickness direction of the inorganic layer is defined in the inorganic layer.

A thin film transistor substrate and a display device comprising the same are provided. The thin film transistor substrate comprises a first thin film transistor and a second thin film transistor on a base substrate, wherein the first thin film transistor includes a first active layer on the base substrate, and a first gate electrode spaced apart from the first active layer, the second thin film transistor includes a second active layer on the base substrate, and a second gate electrode spaced apart from the second active layer, and a mobility of the first active layer is greater than a mobility of the second active layer.

A semiconductor device includes a substrate, and a first transistor disposed on the substrate. The first transistor includes a first channel layer, a magnesium oxide layer, a first gate electrode, a first gate dielectric and first source/drain electrodes. A crystal orientation of the first channel layer is <100> or <110>. The magnesium oxide layer is located below the first channel layer and in contact with the first channel layer. The first gate electrode is located over the first channel layer. The first gate dielectric is located in between the first channel layer and the first gate electrode. The first source/drain electrodes are disposed on the first channel layer.

A semiconductor device that has both high performance and high productivity is provided. The semiconductor device includes a first transistor and a second transistor over a substrate. The first transistor includes a first conductive layer, a first insulating layer, and a second conductive layer in this order, and includes a first semiconductor layer, a second insulating layer, and a third conductive layer in this order over the first conductive layer in an opening provided in the first insulating layer and the second conductive layer. The second transistor includes the first insulating layer, a fourth conductive layer, a fifth conductive layer, a second semiconductor layer, the second insulating layer, and a sixth conductive layer in this order, and the second semiconductor layer includes a region in contact with the second insulating layer and a region overlapping with the second insulating layer with the fourth conductive layer or the fifth conductive layer therebetween. The second conductive layer, the fourth conductive layer, and the fifth conductive layer can be formed from the same film.

An active matrix substrate includes a plurality of gate bus lines, a plurality of source bus lines located closer to the substrate side; a lower insulating layer that covers the source bus lines; an interlayer insulating layer that covers the gate bus lines; a plurality of oxide semiconductor TFTs disposed in association with respective pixel regions; a pixel electrode disposed in each of the pixel regions; and a plurality of source contact portions each of which electrically connects one of the oxide semiconductor TFTs to the corresponding one of the source bus lines, in which each of the oxide semiconductor TFTs includes an oxide semiconductor layer disposed on the lower insulating layer, a gate electrode disposed on a portion of the oxide semiconductor layer, and a source electrode formed of a conductive film, and each of the source contact portions includes a source contact hole, and a connection electrode.

A semiconductor device includes a first transistor and a protection structure. The first transistor includes a gate electrode, a gate dielectric disposed on the gate electrode, and a channel layer disposed on the gate dielectric. The protection structure is laterally surrounding the gate electrode, the gate dielectric and the channel layer of the first transistor. The protection structure includes a first capping layer and a dielectric portion. The first capping layer is laterally surrounding and contacting the gate electrode, the gate dielectric and the channel layer of the first transistor. The dielectric portion is disposed on the first capping layer and laterally surrounding the first transistor.

A thin film transistor substrate and a display device comprising the same are provided. The thin film transistor substrate comprises a first thin film transistor and a second thin film transistor on a base substrate, wherein the first thin film transistor includes a first active layer on the base substrate, and a first gate electrode spaced apart from the first active layer, the second thin film transistor includes a second active layer on the base substrate, and a second gate electrode spaced apart from the second active layer, and a mobility of the first active layer is greater than a mobility of the second active layer.

A display device may comprise a substrate, a first active layer on the substrate and positioned in a first area, a first insulation layer on the first active layer, a second insulation layer on the first insulation layer, a third insulation layer on the second insulation layer, a second active layer on the substrate and positioned in a second area different from the first area, a first gate electrode on the third insulation layer and overlapping at least a portion of the first active layer, a second gate electrode on the third insulation layer and overlapping at least a portion of the second active layer, and a fourth insulation layer on the first gate electrode and the second gate electrode. The second insulation layer may be on the first active layer and under the second active layer, and the second active layer may be buried in the third insulation layer.