The array substrate, the liquid crystal display panel and the liquid crystal display device of the present disclosure are designed to from the MIS storage capacitor by the PSi semiconductor layer, the first metal layer and the insulating layer between above or the PSi semiconductor layer, the second metal layer and the dielectric spacer layer between above, when one side of the first metal layer or the second metal layer receiving the negative gray voltage, the PSi in the PSi semiconductor layer will gather to form the hole, when receiving the positive gray voltage, will form the depletion layer on the upper layer of the PSi to reduce the capacity of the MIS storage capacitor, thereby reducing the difference of the capacitance when the MIS storage capacitor in the positive and negative gray voltage, improving the flicker phenomena and ensuring the display effect.

To provide a semiconductor device with large storage capacity and low power consumption. The semiconductor device includes an oxide semiconductor, a first transistor, a second transistor, and a dummy word line. A channel formation region in the first transistor and a channel formation region in the second transistor are formed in different regions in the oxide semiconductor. The dummy word line is provided to extend between the channel formation region in the first transistor and the channel formation region in the second transistor. By applying a predetermined potential to the dummy word line, the first transistor and the second transistor are electrically isolated in a region of the oxide semiconductor which intersects the dummy word line.

A semiconductor device that can extend the range of adaptable sampling rate when performing analog/digital conversion is provided. The semiconductor device includes a plurality of sample-and-hold circuits storing an analog signal and a plurality of converter circuits having a function of converting the analog signal stored in the sample-and-hold circuit into a digital signal. The sample-and-hold circuit includes a switch and a capacitor that is supplied with an analog signal through the switch. The switch includes an oxide semiconductor in a channel formation region.

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region and a second region; forming a gate layer on the substrate; forming a first gate dielectric layer on the gate layer; forming a first channel layer on the first region and a second channel layer on the second region; and forming a first source/drain on the first channel layer and a second source/drain on the second channel layer.

Disclosed are a manufacturing method of a dual gate TFT substrate and a structure thereof. The manufacturing method of a dual gate TFT substrate includes sequentially manufacturing a bottom gate, a first isolation layer, an island shaped semiconductor layer, and a second isolation layer on a substrate; then, depositing a second metal layer, and implementing a patterning process to the second metal layer with one mask to form a source, a drain and a top gate at the same time; and then, sequentially manufacturing a third isolation layer and a pixel electrode. It can promote the stability of the TFT, reduce the amount of the masks, and shorten the process flow, simplifying the manufacture process and diminishing the production cost. In the structure of the dual gate TFT substrate, the structure is simple, and the stability of the TFT is better, and easy to manufacture.

A display apparatus includes: a substrate; a first semiconductor layer on the substrate, and including a silicon semiconductor; a second semiconductor layer on the first semiconductor layer, and including an oxide semiconductor; a first conductive layer on the second semiconductor layer; at least one metal layer between the first semiconductor layer and the first conductive layer; and a first contact hole to electrically connect the first semiconductor layer to the first conductive layer. An inner surface of the first contact hole includes a side surface of the at least one metal layer.

The display apparatus includes a substrate, a first active layer disposed on the substrate, a first gate layer disposed on a layer covering the first active layer, the first gate layer including a first gate electrode, a second gate layer disposed on a layer covering the first gate layer, the second gate layer including an initialization line including a first part of a second electrode; a second active layer disposed on a layer covering the second gate layer, the second active layer including a second active region overlapping the first part of the second electrode; a third gate layer disposed on a layer covering the second active layer, the third gate layer including a second part of the second electrode overlapping the second active region; and a first source/drain layer disposed on a layer covering the third gate layer, the first source/drain layer including a first connection line.

A semiconductor device includes a substrate, an insulating layer over the substrate, a metal oxide layer over the insulating layer, and an oxide semiconductor layer over the metal oxide layer. The insulating layer includes a first region overlapping the metal oxide layer and a second region not overlapping the metal oxide layer. A hydrogen concentration of the first region is greater than a hydrogen concentration of the second region. A nitrogen concentration of the first region is greater than a nitrogen concentration of the second region.

A semiconductor device that can be miniaturized or highly integrated and a manufacturing method thereof are provided. A semiconductor device includes a metal oxide, a first conductor and a second conductor over the metal oxide, a first insulator positioned over the metal oxide and between the first conductor and the second conductor, a second insulator over the first insulator, a third insulator over the second insulator, a third conductor over the third insulator, a fourth insulator positioned between the first conductor and the first insulator, and a fifth insulator positioned between the second conductor and the first insulator. The first insulator is in contact with the top surface and the side surface of the metal oxide, and oxygen is less likely to pass through the first insulator than the second insulator. The first conductor, the second conductor, the fourth insulator, and the fifth insulator contain the same metal element. In a cross-sectional view in a channel length direction, a distance from the first conductor to the first insulator is greater than or equal to a thickness of the first insulator and less than or equal to a distance from the third conductor to the metal oxide.

A novel input/output device that is highly convenient or reliable, or a novel data processor and a novel semiconductor device are provided. The inventors have devised a structure in which a display portion and an input portion are included; the display portion includes a first display element, a first conductive film electrically connected to the first display element, a second conductive film including a region overlapping with the first conductive film, an insulating film including a region between the second conductive film and the first conductive film, a pixel circuit electrically connected to the second conductive film, and a second display element electrically connected to the pixel circuit; the insulating film includes an opening; and the second conductive film is electrically connected to the first conductive film through the opening. The input portion has a function of sensing an object that approaches a region overlapping with the display portion.