An array substrate and a method of fabricating the same are disclosed. The method has the following steps of: fabricating a switch array layer on a substrate; forming a color resist layer having a red color filter, a green color filter and a blue color filter on the switch array layer, and a through hole in the color resist layer; forming a transparent conductive layer on the color resist layer; and forming a light shield layer on the transparent conductive layer.

A thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing thereof are disclosed. The thin film transistor includes a gate electrode, an insulating layer, an active layer and a source/drain electrode layer, and further includes a light shielding layer, and the light shielding layer is configured to block light from entering the active layer via the insulating layer, and the light shielding layer and the gate electrode are arranged in a same layer and electrically unconnected with each other. The thin film transistor can reduce the light irradiated to the active layer and thus reduce the adverse impact thus incurred.

A display device is provided. The display device includes a first base substrate, a gate line on the first base substrate and extending in a first direction, a data line disposed on the first base substrate, insulated from the gate line, and extending in a second direction, which crosses the first direction, a switch on the first base substrate and electrically connected to the gate line and the data line, an insulating layer on the switch, a first electrode on the insulating layer, a light-shielding conductive layer directly contacting the first electrode and overlapping the switch, and a second electrode insulated from the first electrode and the light-shielding conductive layer, at least partially overlapping the first electrode, and electrically connected to the switch.

The present invention provides a method for manufacturing the N-type TFT, which includes subjecting a light shielding layer to a grating like patternization treatment for controlling different zones of a poly-silicon layer to induce difference of crystallization so as to have different zones of the poly-silicon layer forming crystalline grains having different sizes, whereby through just one operation of ion doping, different zones of the poly-silicon layer have differences in electrical resistivity due to difference of grain size generated under the condition of identical doping concentration to provide an effect equivalent to an LDD structure for providing the TFT with a relatively low leakage current and improved reliability. Further, since only one operation of ion injection is involved, the manufacturing time and manufacturing cost can be saved, damages of the poly-silicon layer can be reduced, the activation time can be shortened, thereby facilitating the manufacture of flexible display devices.

An electro-optical device includes a first light shielding film; a transistor element formed on the first light shielding film to overlap the first light shielding film; a second light shielding film formed on the transistor element to overlap the transistor element and electrically connected to an input terminal of the transistor element; a transparent conductive film extended toward an upper layer side of the second light shielding film in an opening region, through which light penetrates, of the display region; a dielectric film formed on the transparent conductive film in the opening region; and a transparent pixel electrode formed on the dielectric film in the opening region, constituting a storage capacitor together with the transparent conductive film and the dielectric film, and having a transparent pixel electrode which is electrically connected to the transistor element.

The present application discloses a display device having a metal pattern on a substrate of a display device and a light absorbing layer positioned to absorb light reflected by the metal pattern, and a manufacturing method thereof. The light absorbing layer has a pattern corresponding to at least a portion of the metal pattern.

A display device in which light leakage in a monitor element portion is prevented without increasing the number of steps and cost is provided. The display device includes a monitor element for suppressing influence on a light-emitting element due to temperature change and change over time and a TFT for driving the monitor element, in which the TFT for driving the monitor element is provided so as not to overlap the monitor element. Furthermore, the display device includes a first light shielding film and a second light shielding film, in which the first light shielding film is provided so as to overlap a first electrode of the monitor element and the second light shielding film is electrically connect to the first light shielding film through a contact hole formed in an interlayer insulating film. The contact hole is formed so as to surround the outer edge of the first electrode of the monitor element.

The present invention provides a BOA liquid crystal panel and a manufacturing method thereof. The BOA liquid crystal panel includes a first substrate, a second substrate opposite to the first substrate, a black matrix arranged in the first substrate, a thin-film transistor arranged on the black matrix, a color resist layer arranged on the second substrate, a common electrode layer arranged on the second substrate and the color resist layer, a photoresist spacer arranged on the common electrode layer and located between the first substrate and the second substrate, and a liquid crystal layer arranged between the first substrate and the second substrate. The present invention arranges the black matrix of the liquid crystal panel in a channel that is pre-formed in a substrate to make the film thickness of the liquid crystal panel uniform and improve the display performance of the liquid crystal panel.

The present invention belongs to the technical field of display, and specifically relates to an OLED pixel structure and an OLED display device. The OLED pixel structure comprises a thin film transistor and an OLED device, the thin film transistor being provided with a driving electrode for controlling whether the OLED device emits light or not, wherein the pixel structure comprises a transmission region and a reflection region in which a reflection layer formed by extending the driving electrode is provided. The beneficial advantages are that the OLED pixel structure can effectively improve the utilization of the light source and the utilization of the display panel.

A flexible display device of which esthetic appearance is improved by reducing a bezel is disclosed. The flexible display device comprises a substrate including a display area and a non-display area including a bending area; a link line in the non-display area on the substrate; and a bending connection line in the bending area pf the substrate and connected with the link line, and the bending connection line located between a first buffer layer and a second buffer layer of the flexible display device.