A radiographic imaging control device is provided with a radiation detector, amplifiers and a controller. A plurality of pixels are arrayed in the radiation detector, each pixel including a sensor portion that generates charges in accordance with irradiated radiation and a switching element that is for reading out the charges generated at the sensor portion. Each amplifier is provided in correspondence with a respective pixel of the radiation detector, is equipped with a resetter that resets charges remaining at an integration capacitor, and amplifies an electronic signal according to the charges read out by the switching element from the corresponding pixel by a pre-specified amplification factor. In accordance with pre-specified conditions, the controller controls so as to alter a bias current supplied to the amplifiers in at least some periods of resetting by the resetter.

An embodiment relates to a group II-VI semiconductor wafer of a radiation detector, and an embodiment relates to a method for producing same. An embodiment of the present invention provides a group II-VI semiconductor of a radiation detector enabling reduction or restriction of the edge effect (or the end surface effect) and a method for producing same. An embodiment of the present invention provides a radiation detector obtained by half-cutting or full-cutting a group II-VI semiconductor wafer having a zinc blende structure in which the wafer has a {001} plane main surface, and cut planes according to the half-cutting or full-cutting have an angle (0) relative to the slip direction of the wafer.

A semiconductor device includes a first semiconductor layer of a first conductivity type having a primary surface and having a sensor therein, a second semiconductor layer of a second conductivity type having a circuit element formed therein. The second semiconductor layer is formed at a same side of the primary surface of the first semiconductor layer. The device further includes an insulating layer formed between the first semiconductor layer and the second semiconductor layer. The insulating layer is disposed on the primary surface of the first semiconductor layer and surrounds the circuit element, and includes a charge-attracting semiconductor pattern of the first conductivity type that is disposed near the circuit element so as to attract electrical charges generated in the insulating layer.

Systems, devices, and methods are described for providing, among other things, an intra-oral x-ray imaging system configured to reduce patient exposure to x-rays, reduce amount of scatter, transmission, or re-radiation during imaging, or improve x-ray image quality. In an embodiment, an intra-oral x-ray imaging system includes an intra-oral x-ray sensor configured to communicate intra-oral x-ray sensor position information or intra-oral x-ray sensor orientation information to a remote x-ray source.

With an image sensor in which the amplifier circuit is disposed at each pixel, there is such an issue that the threshold voltage of the transistor fluctuates so that the signal voltage fluctuates because a voltage is continuously applied between the source and the gate of the transistor at all times when using the amorphous thin film semiconductor as the transistor that constitutes an amplifier circuit. The gate-source potential of the TFT that constitutes the amplifier circuit is controlled so that the gate terminal voltage becomes smaller than the source terminal voltage in an integrating period where the pixels accumulate the signals, and controlled so that the gate terminal voltage becomes larger than the source terminal voltage in a readout period where the pixels output the signals.

A detector panel is described having readout circuitry integrated with the photodetectors, such as in the light imager panel. The detector is useful in high spatial resolution and low-dose or low-signal imaging contexts and may be used in adaptive 2D binning configurations. Adaptive binning of detector elements may be accomplished using control logic and X-ray intensity detector circuitry capable of assessing an incident X-ray intensity and controlling binning of an associated group of detector elements.

Technology is described for selectively disconnecting a communal module (e.g., horizontal power and signal distribution network) from conductive traces (e.g., vertical columns) that are coupled to cell elements. In one example, a matrix type integrated circuit includes a two dimensional (2D) array of cell elements, a plurality of conductive traces, a communal module, and a plurality of switches. Each cell element in the 2D array provides a similar function. The plurality of conductive traces is substantially parallel to a first axis of the 2D array. Each conductive trace is coupled to a conductive interconnect of cell elements adjacent to the conductive trace. The communal module is configured to provide distribution of at least one electrical signal to the cell elements in the 2D array via at least two conductive traces that are substantially parallel to the first axis.

An imaging array with integrated circuitry for supporting automatic exposure control and a method for using such an imaging array are provided. One or more electrodes are disposed substantially parallel with at least a portion of the array of pixels forming the imaging array and provide capacitively coupling to at least one photodiode electrode.

A silicon photomultiplier array including a plurality of microcells arranged in rows and columns. A plurality of circuit traces connecting microcell output ports to the array pixel output port, with one or more impedance matching networks connected to at least one of the circuit traces. The impedance matching networks can be connected between each row circuit trace and the pixel output port. Impedance matching networks can be located between junctions of adjacent microcell output ports and row circuit traces.

The present invention provides an invisible light flat plate detector and a manufacturing method thereof, an imaging apparatus, relates to the field of detection technology, can solve problems that the structure of the invisible light flat plate detector in the prior art is complex and the manufacturing method thereof is tedious. The invisible light flat plate detector of the present invention comprises a plurality of detection units and an invisible light conversion layer provided above the detection units for converting invisible light into visible light, each of the detection units comprising a thin film transistor provided on a substrate, and a first insulation layer, a first electrode, a semiconductor photoelectronic conversion module, a second electrode which are successively provided above the thin film transistor and of which projections on the substrate at least partially overlap with a projection of the thin film transistor on the substrate.