A photodetector of the present invention includes: a photodiode; and a protection diode. The photodiode and the protection diode are integrated on a same semiconductor substrate. The photodiode includes a semiconductor portion made of at least one type of semiconductor material, an anode electrode, and a cathode electrode. The protection diode includes a core layer, a semiconductor portion provided in the core layer and including a first-type semiconductor region doped with first-type impurity ions and a second-type semiconductor region doped with second-type impurity ions, an anode electrode, and a cathode electrode. The semiconductor portion of the protection diode includes only one type of semiconductor material used for the semiconductor portion of the photodiode. The anode electrodes of the protection diode and the photodiode are connected to each other. The cathode electrodes of the protection diode and the photodiode are connected to each other.

A photodetector of the present invention includes: a photodiode; and a protection diode. The photodiode and the protection diode are integrated on a same semiconductor substrate. The photodiode includes a semiconductor portion made of at least one type of semiconductor material, an anode electrode, and a cathode electrode. The protection diode includes a core layer, a semiconductor portion provided in the core layer and including a first-type semiconductor region doped with first-type impurity ions and a second-type semiconductor region doped with second-type impurity ions, an anode electrode, and a cathode electrode. The semiconductor portion of the protection diode includes only one type of semiconductor material used for the semiconductor portion of the photodiode. The anode electrodes of the protection diode and the photodiode are connected to each other. The cathode electrodes of the protection diode and the photodiode are connected to each other.

A semiconductor device includes a semiconductor layer, a trench with the semiconductor layer being a bottom surface thereof, and an insulating layer covering a surface of the trench. The semiconductor layer includes a first contact region, a second contact region located on a first impurity region in a surface portion of the semiconductor layer and separated from the first contact region, and a second impurity region located on the first impurity region below the second contact region and in contact with both the first impurity region and the second contact region. The first impurity region and the first contact region are separated from each other.

A semiconductor device includes a semiconductor layer, a trench with the semiconductor layer being a bottom surface thereof, and an insulating layer covering a surface of the trench. The semiconductor layer includes a first contact region, a second contact region located on a first impurity region in a surface portion of the semiconductor layer and separated from the first contact region, and a second impurity region located on the first impurity region below the second contact region and in contact with both the first impurity region and the second contact region. The first impurity region and the first contact region are separated from each other.

A semiconductor device includes: a substrate and backward and forward diodes. Each backward diodes includes: a first channel layer; a first barrier layer; a first gate electrode; a first gate semiconductor layer; and a first source electrode and a first drain electrode that are disposed at opposite sides of the first gate electrode. The forward diode includes: a second channel layer; a second barrier layer; a second gate electrode; a second gate semiconductor layer; and a second source electrode and a second drain electrode that are disposed at opposite sides of the second gate electrode. The second source electrode is connected to the second gate electrode, and a first drain electrode of the backward diodes is connected with a second source electrode of the forward diode. The band gaps of the first (second) channel layer and the first (second) barrier layers are different.

A semiconductor device includes: a substrate and backward and forward diodes. Each backward diodes includes: a first channel layer; a first barrier layer; a first gate electrode; a first gate semiconductor layer; and a first source electrode and a first drain electrode that are disposed at opposite sides of the first gate electrode. The forward diode includes: a second channel layer; a second barrier layer; a second gate electrode; a second gate semiconductor layer; and a second source electrode and a second drain electrode that are disposed at opposite sides of the second gate electrode. The second source electrode is connected to the second gate electrode, and a first drain electrode of the backward diodes is connected with a second source electrode of the forward diode. The band gaps of the first (second) channel layer and the first (second) barrier layers are different.

The present disclosure generally relates to a semiconductor device including a p-n junction formed in part by a Zener region. In an example, a semiconductor device includes first and second doped regions both in a semiconductor substrate. The first doped region is doped with a first conductivity type dopant. The first doped region is across first and second lateral regions. The second doped region is doped with a second conductivity type dopant opposite from the first conductivity type dopant. The first and second doped regions form a p-n junction. The second doped region underlies the first doped region in the first lateral region. A peak concentration of the second conductivity type dopant is at a uniform depth across the first lateral region and intersects the first doped region in the second lateral region at a lateral distance from a transition between the first and second lateral regions.

In one general embodiment, a process includes a repeated sequence of growing a first layer having a first type of electrically active dopant and growing a second layer having a second type of electrically active dopant, where the first type of electrically active dopant of the first layer is one of either a P-type or an N-type and the second type of electrically active dopant of the second layer is the other one of either the P-type or N-type.

In one general embodiment, a process includes a repeated sequence of growing a first layer having a first type of electrically active dopant and growing a second layer having a second type of electrically active dopant, where the first type of electrically active dopant of the first layer is one of either a P-type or an N-type and the second type of electrically active dopant of the second layer is the other one of either the P-type or N-type.

A semiconductor structure and method for manufacturing thereof are provided. The semiconductor structure includes a silicon substrate having a first surface, a III-V layer on the first surface of the silicon substrate and over a first active region, and an isolation region in a portion of the III-V layer extended beyond the first active region. The first active region is in proximal to the first surface. The method includes the following operations. A silicon substrate having a first device region and a second device region is provided, a first active region is defined in the first device region, a III-V layer is formed on the silicon substrate, an isolation region is defined across a material interface in the III-V layer by an implantation operation, and an interconnect penetrating through the isolation region is formed.