A Zener diode comprising: a PN junction formed in a semiconductor material; and one or more stress-inducing regions configured to impart a compressive stress in the PN junction along a current flow direction of the PN junction.

A Zener diode comprising: a PN junction formed in a semiconductor material; and one or more stress-inducing regions configured to impart a compressive stress in the PN junction along a current flow direction of the PN junction.

A semiconductor device includes: a semiconductor layer divided into a first region, a second region, and a third region that do not overlap each other in a plan view; a first vertical metal-oxide-semiconductor (MOS) transistor provided in the first region; a second vertical MOS transistor provided in the second region; and a third vertical MOS transistor provided in the third region. First gate wiring of the first vertical MOS transistor and third gate wiring of the third vertical MOS transistor are electrically connected in series via a first diode, with stated order being a forward direction. Second gate wiring of the second vertical MOS transistor and the third gate wiring are electrically connected in series via a second diode, with stated order being a forward direction.

A semiconductor device includes: a semiconductor layer divided into a first region, a second region, and a third region that do not overlap each other in a plan view; a first vertical metal-oxide-semiconductor (MOS) transistor provided in the first region; a second vertical MOS transistor provided in the second region; and a third vertical MOS transistor provided in the third region. First gate wiring of the first vertical MOS transistor and third gate wiring of the third vertical MOS transistor are electrically connected in series via a first diode, with stated order being a forward direction. Second gate wiring of the second vertical MOS transistor and the third gate wiring are electrically connected in series via a second diode, with stated order being a forward direction.

Provided is a semiconductor device that includes: a semiconductor substrate having a first doped region of a first doping type and a second doped region of a second doping type, the first doped region being beneath but immediately adjacent to, the second doped region, with the first doping type being opposite the second doping type, thereby forming a junction region between the first doped region and the second doped region; and an additional layer that has been deposited above the junction region having similar mechanical properties as the semiconductor substrate. The additional layer covers at least 50% of a projection area of the junction region. The second doped region has a top surface, the additional layer has a bottom surface, and at least 90% of the bottom surface of the additional layer is electrically insulated from the top surface of the second doped region.

Provided is a semiconductor device that includes: a semiconductor substrate having a first doped region of a first doping type and a second doped region of a second doping type, the first doped region being beneath but immediately adjacent to, the second doped region, with the first doping type being opposite the second doping type, thereby forming a junction region between the first doped region and the second doped region; and an additional layer that has been deposited above the junction region having similar mechanical properties as the semiconductor substrate. The additional layer covers at least 50% of a projection area of the junction region. The second doped region has a top surface, the additional layer has a bottom surface, and at least 90% of the bottom surface of the additional layer is electrically insulated from the top surface of the second doped region.

Breakdown diodes and methods of making the same are described. Such a breakdown diode can be fabricated in a semiconductor substrate and have a junction configured to breakdown under a target reverse bias applied across the junctions. The junction is located below the surface of the substrate by a distance suitable for ameliorating mechanical stress impact to the reverse bias breakdown voltage of the junction. Moreover, the junction is located away from an interface causing noise issues.

Breakdown diodes and methods of making the same are described. Such a breakdown diode can be fabricated in a semiconductor substrate and have a junction configured to breakdown under a target reverse bias applied across the junctions. The junction is located below the surface of the substrate by a distance suitable for ameliorating mechanical stress impact to the reverse bias breakdown voltage of the junction. Moreover, the junction is located away from an interface causing noise issues.

There has been a problem that when a value of a current flowing through a thermistor increases, a voltage drop generated in the thermistor increases, and variations occur in a clamp voltage. A semiconductor device includes: a switching element that is on-off controlled; and a surge voltage protection circuit connected between a positive electrode side terminal of the switching element and a control terminal of the switching element. The surge voltage protection circuit includes a first Zener diode, a second Zener diode connected in series with the first Zener diode, and a temperature characteristic compensating element having a temperature coefficient different in polarity from the first Zener diode and the second Zener diode and connected in parallel with the second Zener diode.

There has been a problem that when a value of a current flowing through a thermistor increases, a voltage drop generated in the thermistor increases, and variations occur in a clamp voltage. A semiconductor device includes: a switching element that is on-off controlled; and a surge voltage protection circuit connected between a positive electrode side terminal of the switching element and a control terminal of the switching element. The surge voltage protection circuit includes a first Zener diode, a second Zener diode connected in series with the first Zener diode, and a temperature characteristic compensating element having a temperature coefficient different in polarity from the first Zener diode and the second Zener diode and connected in parallel with the second Zener diode.