The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material and a passivation layer is disposed on the second semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material. A silicide is arranged within the passivation layer and along tops of the first doped region and the second doped region.

A method for manufacturing semiconductor structure includes: forming a gate structure on a substrate; forming a source portion and a drain portion in the substrate respectively at two opposite sides of the gate structure; forming a protection layer over the substrate, the gate structure, the source portion and the drain portion; forming an opening in the protective layer to expose the gate structure; and performing a silicidation process to form a silicide layer on the exposed gate structure.

A semiconductor structure and a method of forming the same are provided. In an embodiment, a semiconductor structure includes a first plurality of channel members over a backside dielectric layer, a second plurality of channel members over the backside dielectric layer, a silicide feature disposed in the backside dielectric layer, and a source/drain feature disposed over the silicide feature and extending between the first plurality of channel members and the second plurality of channel members. The silicide feature extends through an entire depth of the backside dielectric layer.

A method includes forming a gate structure over a substrate; forming a first gate spacer and a second gate spacer on opposite sidewalls of the gate structure, respectively; implanting a first dopant of a first conductivity type into the substrate form a lightly doped source region adjacent to the first gate spacer, and a lightly doped drain region adjacent to the second gate spacer; forming a patterned mask over a first portion of the lightly doped drain region, while leaving a second portion of the lightly doped drain region exposed; and with the patterned mask in place, implanting a second dopant of the first conductivity type into the substrate, resulting in converting the second portion of the lightly doped drain region into a drain region.

A semiconductor structure and forming method thereof are provided. A substrate includes a region. A first gate structure and a sacrificial gate structure are recessed in the substrate and disposed in the region. The sacrificial gate structure is adjacent to the first gate structure. A first contact is electrically connected to the first gate structure. A sacrificial gate masking structure is disposed over the sacrificial gate structure. An upper surface of the sacrificial gate structure is entirely covered by the sacrificial gate masking structure.

The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material fills an indentation formed by interior sidewalls and a recessed surface of the substrate. The second semiconductor material is a group IV semiconductor or a group III-V compound semiconductor. A third semiconductor material is disposed on an upper surface of the second semiconductor material. A first doped region and a second doped region respectively have a first part within the third semiconductor material and a second part within the second semiconductor material.

A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes: a substrate; a gate dielectric layer disposed within the substrate in a first region of the substrate; a first gate electrode disposed within the substrate and at least laterally surrounded by the gate dielectric layer; a plurality of first protection structures over the first gate electrode; a second protection structure over the first gate electrode and laterally surrounding first protection structures from a top-view perspective; and a second gate electrode disposed over the substrate in a second region of the substrate. The plurality of first protection structures and the second protection structure have upper surfaces level with an upper surface of the second gate electrode.

A method of forming a semiconductor structure includes following operations. A substrate having a first region and a second region is provided. A first gate is formed in the first region, and a second gate and a sacrificial gate are formed in the second region. The second gate includes a first masking structure disposed thereon, and the sacrificial gate includes a second masking structure disposed thereon. A first patterned layer is formed over the first masking structure and the second masking structure. A first portion of the first masking structure is exposed through the first patterned layer. The first portion of the first masking structure is removed. A first silicide layer is formed over the second gate.

An apparatus includes a substrate and a transistor disposed on the substrate. The transistor can include a gate disposed between a source area and a drain area of the transistor. The transistor can also include a plurality of routing lanes above the gate for use by automated routing programs that layout metal connections for the apparatus. A first field plate can be disposed above a LDD region of the source area with the first field plate being on a same level as the plurality of routing lanes. A second field plate can be disposed above a LDD region of the drain area with the second field plate being on the same level as the plurality of routing lanes. The first and second field plates can be electrically connected to the gate using respective first and second path that bypass the plurality of routing lanes.

Disclosed is a method for manufacturing a semiconductor device. The method includes: forming a gate insulating material layer on a substrate; forming a gate material layer on the gate insulating material layer; and performing an etching process on the gate material layer and the gate insulating material layer to form a gate layer and a gate insulating layer. The gate insulating layer and the gate layer each include a first end and a second end opposite to each other in a direction parallel to a channel length. The first end of the gate insulating layer is recessed inwards by a preset length relative to the first end of the gate layer, and the second end of the gate insulating layer is recessed inwards by the preset length relative to the second end of the gate layer.