A sensor device comprising at least a first substrate, a capacitive sensor for recording the approach of an object, a piezoelectric sensor for recording a pressure, wherein the capacitive sensor is arranged on a first side of the first substrate and the piezoelectric sensor is arranged on a second side of the first substrate, wherein the second side is opposite the first side, or wherein the capacitive sensor and the piezoelectric sensor are arranged on the same side of the substrate.

An integrated structure of a crystal resonator with a control circuit and an integration method therefor. The crystal resonator is formed by first forming a lower cavity (120) in a device wafer (100) in which a control circuit is formed, forming a piezoelectric vibrator (200) on the device wafer (100) and then enclosing the piezoelectric vibrator (200) within an upper cavity (400) through forming a cap layer (420) using a planar fabrication process, The crystal resonator according to the present invention has a smaller size, which is help for reducing the power consumption thereof, and the crystal resonator is more easily integrated with other semiconductor components, thereby improving the integration of the device.

An actuator device has an electroactive polymer actuator and an integrated piezoelectric transformer. At least a secondary side of the integrated piezoelectric transformer shares a piezoelectric electroactive polymer layer with the electroactive polymer actuator, so that lower external voltages can be applied to the actuator device. A diode is connected between the secondary side of the integrated piezoelectric transformer and the electroactive polymer actuator.

A display device includes a display panel, and a plurality of piezoelectric elements arranged on one surface of the display panel, wherein each of the plurality of piezoelectric elements includes a pressure sensor configured to detect pressure applied to a surface opposite to the one surface of the display panel, and a haptic device configured to generate vibration according to a driving voltage.

A structure of a semiconductor device is provided, including a circuit substrate. A first metal bulk layer is disposed on the circuit substrate. A buffer layer is disposed on the first metal bulk layer. An absorbing layer is disposed on the buffer layer. A first electrode layer is disposed on the absorbing layer. A plurality of piezoelectric material units are disposed on the first electrode layer. A protection layer is conformally disposed on the piezoelectric material units. A second metal bulk layer is disposed over the piezoelectric material units, and including a first part and a second part. The first part penetrating through the protection layer is disposed on the piezoelectric material units, serving as a second electrode layer. The second part is at a same level of the first part, and at least electrically connecting to the first electrode layer.

A display apparatus includes a display panel configured to display an image and a sound generating device on a rear surface of the display panel. The sound generating device is configured to vibrate the display panel to generate sound. The sound generating device includes a first structure and a first passivation layer on one side of the first structure, at least a portion of the first passivation layer having a non-flat shape.

A quantum information processing device including a semiconductor substrate. An optical resonator is coupled to the substrate. The optical resonator supports a first photonic mode with a first resonator frequency. The quantum information processing device includes a non-gaseous chalcogen donor atom disposed within the semiconductor substrate and optically coupled to the optical resonator. The donor atom has a transition frequency in resonance with the resonator frequency. Also disclosed herein are systems, devices, articles and methods with practical application in quantum information processing including or associated with one or more deep impurities in a silicon substrate optically coupled to an optical structure.

According to various embodiments, a PMUT device may include a wafer, an active layer including a piezoelectric stack, an intermediate layer having a cavity therein where the intermediate layer is disposed between the wafer and the active layer such that the cavity is adjoining the piezoelectric stack. A via may be formed through the active layer and the intermediate layer to the wafer. A metallic layer may be disposed over the active layer and over surfaces of the via. The intermediate layer may include an interposing material surrounding the cavity, and may further include a sacrificial material surrounding the via. The sacrificial material may be different from the interposing material. The metallic layer may include a first member at least substantially overlapping the piezoelectric stack, a second member extending from the first member to the cavity, and a third member extending into the active layer to contact an electrode therein.

The present invention features methods of treating patients with chronic heart failure by administering a neuregulin polypeptide within a dosage range which is both effective and safe.

Ultrasonic sensing approaches are described with integrated MEMS-CMOS implementations. Embodiments include ultrasonic sensor arrays for which PMUT structures of individual detector elements are at least partially integrated into the CMOS ASIC wafer. MEMS heating elements are integrated with the PMUT structures by integrating under the PMUT structures in the CMOS wafer and/or over the PMUT structures (e.g., in the protective layer). For example, embodiments can avoid wafer bonding and can reduce other post processing involved with conventional manufacturing of PMUT ultrasonic sensors, while also improving thermal response.