Provided is a multi-negative differential resistance device. The multi-negative differential resistance device includes a first negative differential resistance device and a second negative differential resistance device connected in parallel with the first negative differential resistance device, and a peak and a valley of the first negative differential resistance device and a peak and a valley of the second negative differential resistance device are synthesized, and, thus, the multi-negative differential resistance device has two peaks and two valleys.

An integrated neuron circuit structure comprising at least one thin-film resistor, one Metal Insulator Metal capacitor and one Negative Differential Resistance device.

A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.

The present invention features a microwave gain medium having a negative refractive index, which overcompensates for loss exhibited in conventional passive metamaterials. The design consists of sub-wavelength building blocks with embedded microwave tunnel diodes exhibiting a negative refractive index and a stable net gain. The negative resistance may also be used for dispersion compensation that may enable broadband response of metamaterials.

A wireless terminal (1) is configured, when a plurality of hybrid automatic repeat request (HARQ) ACK/NACK bits corresponding to a plurality of downlink component carriers (DL CCs) configured in the wireless terminal (1) are transmitted on a single physical uplink control channel (PUCCH) on a single uplink component carrier (UL CC), to change a spreading rate to be applied to time-domain spreading of a plurality of modulation symbols generated from the plurality of HARQ ACK/NACK bits, depending on the number of the plurality of DL CCs or the number of the plurality of HARQ ACK/NACK bits.

A rectifier is provided for converting an oscillating electromagnetic field into a direct current and comprises an electrically conductive antenna layer configured to absorb electromagnetic radiation, an electrically conductive mirror layer configured to provide an electromagnetic mirror charge of the antenna layer, an electrically insulating tunnel barrier layer positioned between the antenna layer and the mirror layer, and an electronic circuit electrically connected between the conductive mirror layer and the conductive antenna layer. The rectifier employs a metamaterial configuration for room temperature rectification of radiation in regions of the electromagnetic spectrum comprising the MWIR and LWIR regions. Methods for use of the rectifier in rectifying and detecting radiation are described.

An Access Point (AP) performs a Multi-User (MU) transmission by allocating a plurality of resources of an Up-Link (UL) MU transmission to a first plurality of stations, and by transmitting, using one or more 20 MHz channels, a Down-Link (DL) PHY Layer Convergence Procedure (PLCP) Protocol Data Unit (PPDU). The DL PPDU includes trigger information. The trigger information solicits the first plurality of stations to participate in the UL MU transmission using the allocated resources. All of the allocated resources may be in the one or more 20 MHz channels of the DL PPDU. The allocated resources may include at least one resource in each of the one or more 20 MHz channels of the DL PPDU.

A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.

A vanadium dioxide (VO.sub.2)-based threshold switch device exhibiting current-controlled negative differential resistance (S-type NDR), an electrical oscillator circuit based on the threshold switch device, a wafer including a plurality of said devices, and a method of manufacturing said device are provided. The VO.sub.2-based threshold switch device exhibits volatile resistance switching and current-controlled negative differential resistance from the first time a sweeping voltage or voltage pulse is applied across the device without being treated with an electroforming process. Furthermore, the device exhibits substantially identical switching characteristics over at least 10.sup.3 switching operations between a high resistance state (HRS) and a low resistance state (LRS), and a plurality of threshold switch devices exhibits a threshold voltage V.sub.T spreading of less than about 25%. The threshold switch device may be included in an oscillator circuit to produce an astable oscillator that may serve as a functional building block in spiking-neuron based neuromorphic computing.

Provided is a multi-negative differential resistance device. The multi-negative differential resistance device includes a first negative differential resistance device and a second negative differential resistance device connected in parallel with the first negative differential resistance device, and a peak and a valley of the first negative differential resistance device and a peak and a valley of the second negative differential resistance device are synthesized, and, thus, the multi-negative differential resistance device has two peaks and two valleys.