An apparatus and method for abating ozone and reducing sulfuric acid from an exhaust stream. In a semiconductor manufacturing plant the processing of wafers involves the cleaning and etching of wafers, the resultant processing may produce gasses which must be abated. The apparatus and method utilizes UV light in high doses to convert ozone (O.sub.3) to oxygen (O.sub.2). By ensuring laminar flow through the UV light chambers, the efficiency of the system is sufficient to allow for the remaining impurities in the exhaust air to be removed through the use of an RTO.

An apparatus and method for abating ozone and reducing sulfuric acid from an exhaust stream. In a semiconductor manufacturing plant the processing of wafers involves the cleaning and etching of wafers, the resultant processing may produce gasses which must be abated. The apparatus and method utilizes UV light in high doses to convert ozone (O.sub.3) to oxygen (O.sub.2). By ensuring laminar flow through the UV light chambers, the efficiency of the system is sufficient to allow for the remaining impurities in the exhaust air to be removed through the use of an RTO.

An apparatus and method for abating ozone and reducing sulfuric acid from an exhaust stream. In a semiconductor manufacturing plant the processing of wafers involves the cleaning and etching of wafers, the resultant processing may produce gasses which must be abated. The apparatus and method utilizes UV light in high doses to convert ozone (O.sub.3) to oxygen (O.sub.2). By ensuring laminar flow through the UV light chambers, the efficiency of the system is sufficient to allow for the remaining impurities in the exhaust air to be removed through the use of an RTO.

The invention relates to a nanoporous polyalkoxysilane sol-gel matrix and to a process for producing such a nanoporous polyalkoxysilane sol-gel matrix containing indigo carmine, wherein said process comprises the following steps: a) synthesizing a gel from tetramethoxysilane or from a mixture of tetramethoxysilane and another organosilicon precursor chosen from phenyltrimethoxysilane, phenyltriethoxysilane, a fluoroalkyltrimethoxysilane, a fluoroalkyltriethoxysilane, a chloroalkylmethoxysilane, a chloroalkylethoxysilane, an aminopropyltriethoxysilane and mixtures thereof, the synthesis being carried out in an aqueous medium in the presence of a polar organic solvent and of the indigo carmine at a temperature ranging from 20 to 70 C., b) drying the gel obtained in step a) so as to obtain a nanoporous polyalkoxysilane sol-gel matrix containing indigo carmine.

The invention relates to a nanoporous polyalkoxysilane sol-gel matrix and to a process for producing such a nanoporous polyalkoxysilane sol-gel matrix containing indigo carmine, wherein said process comprises the following steps: a) synthesizing a gel from tetramethoxysilane or from a mixture of tetramethoxysilane and another organosilicon precursor chosen from phenyltrimethoxysilane, phenyltriethoxysilane, a fluoroalkyltrimethoxysilane, a fluoroalkyltriethoxysilane, a chloroalkylmethoxysilane, a chloroalkylethoxysilane, an aminopropyltriethoxysilane and mixtures thereof, the synthesis being carried out in an aqueous medium in the presence of a polar organic solvent and of the indigo carmine at a temperature ranging from 20 to 70 C., b) drying the gel obtained in step a) so as to obtain a nanoporous polyalkoxysilane sol-gel matrix containing indigo carmine.

A gas processing apparatus of an embodiment includes a gas processing unit, a flow forming unit, an AC power supply, and first and second filters. The gas processing unit includes a plurality of stacks each having a dielectric substrate, a first to a third electrode. The flow forming unit forms a flow of a target gas flowing toward the gas processing unit. The AC power supply applies an AC voltage across the first, second electrodes and the third electrode so as to generate plasma induced flows of the target gas between the dielectric substrates. The first filter is disposed at an upstream of the gas processing unit, and removes ozone. The second filter is disposed at a downstream of the gas processing unit, and removes ozone.

A gas processing apparatus of an embodiment includes a gas processing unit, a flow forming unit, an AC power supply, and first and second filters. The gas processing unit includes a plurality of stacks each having a dielectric substrate, a first to a third electrode. The flow forming unit forms a flow of a target gas flowing toward the gas processing unit. The AC power supply applies an AC voltage across the first, second electrodes and the third electrode so as to generate plasma induced flows of the target gas between the dielectric substrates. The first filter is disposed at an upstream of the gas processing unit, and removes ozone. The second filter is disposed at a downstream of the gas processing unit, and removes ozone.

An exhaust purification system has a centrifuge filter, a first fan device, a second fan device, a pump, and an ozone generator. The centrifuge filter has a container having a waste gas treating area and a wastewater treating area. The first fan device communicates with and draws gas into the waste gas treating area. The second fan device communicates with and draws the gas out of the waste gas treating area. The pump communicates with and draws wastewater from the wastewater treating area. The ozone generator communicates with the pump and introduces ozone into the wastewater inside the pump. A part of the ozone dissolved in the wastewater is released to the waste gas treating area to react with the gas, and the other part of the ozone dissolved in the wastewater reacts with the wastewater.

An exhaust purification system has a centrifuge filter, a first fan device, a second fan device, a pump, and an ozone generator. The centrifuge filter has a container having a waste gas treating area and a wastewater treating area. The first fan device communicates with and draws gas into the waste gas treating area. The second fan device communicates with and draws the gas out of the waste gas treating area. The pump communicates with and draws wastewater from the wastewater treating area. The ozone generator communicates with the pump and introduces ozone into the wastewater inside the pump. A part of the ozone dissolved in the wastewater is released to the waste gas treating area to react with the gas, and the other part of the ozone dissolved in the wastewater reacts with the wastewater.

An apparatus and method for abating ozone and reducing sulfuric acid from an exhaust stream. In a semiconductor manufacturing plant the processing of wafers involves the cleaning and etching of wafers, the resultant processing may produce gasses which must be abated. The apparatus and method utilizes UV light in high doses to convert ozone (O.sub.3) to oxygen (O.sub.2). By ensuring laminar flow through the UV light chambers, the efficiency of the system is sufficient to allow for the remaining impurities in the exhaust air to be removed through the use of an RTO.