Provided is a method for producing a GaN layered substrate, comprising the steps of: subjecting a C-plane sapphire substrate 11 having an off-angle of 0.5° to 5° to a high-temperature nitriding treatment at 800° C. to 1,000° C. to carry out a surface treatment of the C-plane sapphire substrate; carrying out epitaxial growth of GaN on the surface of the surface-treated C-plane sapphire substrate 11 to produce a GaN film carrier having a surface of an N polar face; forming an ion implantation region 13.sub.ion by carrying out ion implantation on the GaN film 13; laminating and joining a support substrate 12 with the GaN film-side surface of the ion-implanted GaN film carrier; and separating at the ion-implanted region 13.sub.ion in the GaN film 13 to transfer a GaN thin film 13a onto the support substrate 12, to produce a GaN layered substrate 10 having, on the support substrate 12, a GaN thin film 13a having a surface of a Ga polar face. A GaN layered substrate having a good crystallinity and a surface of a Ga face is obtained by a single transfer process.

A surfacing material includes a substrate having a top side and a bottom side. A matte surface is formed on the bottom side thereof, wherein the matte surface of the surfacing material is a coating of an electron beam radiation curable material applied to the bottom side of the substrate. The coating is an epoxy acrylic or urethane acrylic laid upon the substrate. The epoxy acrylic or urethane acrylic is irradiated with UV-radiation to produce a UV-radiation layer wherein the epoxy acrylic or urethane acrylic is neither hardened nor is an entire layer of the epoxy acrylic or urethane acrylic crosslinked but rather the epoxy acrylic or urethane acrylic only crosslinked on the surface thereof, which produces a matting surface through the effects of a micro-convolution.

A method for manufacturing neutral color antireflective glass substrates by ion implantation, the method including ionizing a N.sub.2 source gas so as to form a mixture of single charge and multicharge ions of N, forming a beam of single charge and multicharge ions of N by accelerating with an acceleration voltage A between 20 kV and 25 kV and setting the ion dosage at a value between 610.sup.16 ions/cm.sup.2 and 5.0010.sup.15A/kV+2.0010.sup.17 ions/cm.sup.2. A neutral color antireflective glass substrates including an area treated by ion implantation with a mixture of simple charge and multicharge ions according to the method.

A substrate bonding method for bonding two substrates includes an activation treatment step of, by subjecting at least one of bonding surfaces to be bonded to each other of respective ones of the two substrates to at least one of reactive ion etching using nitrogen gas and irradiation of nitrogen radicals, activating the bonding surface, a gas exposure step of, after the activation treatment step, exposing the bonding surfaces of the two substrates to gas containing water within a preset standard time, and a bonding step of bonding the two substrates that have the bonding surfaces activated in the activation treatment step.

A laminate and a method for producing a patterned substrate using the same are disclosed herein. In some embodiments, a laminate includes a substrate, and a stripe pattern having first and second polymer lines alternately and repeatedly disposed on the substrate, wherein the first polymer line comprises a first polymer having a first polymerized unit having a ring structure connected to a main chain and a second polymerized unit represented by Formula 1. The method may be applied to manufacture of devices, such as electronic devices, or of applications, such as integrated optical systems, guidance and detection patterns of magnetic domain memories, flat panel displays, liquid crystal displays (LCDs), thin film magnetic heads or organic light emitting diodes, and may be used to build a pattern on a surface used in manufacture of discrete track media, such as integrated circuits, bit-patterned media and/or magnetic storage devices such as hard drives.

Provided is a decorative sheet for laminating on a base having a thermal conductivity of less than 0.1 W/(m.Math.K) on a side to which the decorative sheet is bonded, wherein

(1) the decorative sheet comprises non-halogen-based thermoplastic resin-containing layers,
(2) at least one of the non-halogen-based thermoplastic resin-containing layers is a layer containing a non-halogen-based flame retardant,
(3) the total thickness (m) of the non-halogen-based thermoplastic resin-containing layers is referred to as x, and the percentage (mass %) of the total mass of the non-halogen-based flame retardant in the non-halogen-based thermoplastic resin-containing layers in 100 mass % of the total mass of the non-halogen-based thermoplastic resin-containing layers is referred to as y, and x and y satisfy the following equation (I),

y0.00008x.sup.2+0.016x2.51(I),

(4) the content of the non-halogen-based flame retardant in each of the layers containing a non-halogen-based flame retardant is 8 mass % or more.

A textured release sheet includes a substrate, which has been electron beam treated, including a top side and a bottom side. A matte surface is formed on the bottom side thereof, wherein the matte surface of the surfacing material is a coating of an radiation curable material applied to the bottom side of the substrate. The coating is an UV curable acrylate mixture applied to the substrate, wherein the UV curable acrylate mixture is irradiated with UV-radiation via an excimer laser emitter to produce a UV-irradiated layer wherein the UV curable acrylate mixture is only crosslinked on the surface thereof, which produces a matting surface through the effects of a micro-convolution.

Provided is a method for producing a GaN layered substrate, comprising the steps of: subjecting a C-plane sapphire substrate 11 having an off-angle of 0.5? to 5? to a high-temperature nitriding treatment at 800? C. to 1,000? C. to carry out a surface treatment of the C-plane sapphire substrate; carrying out epitaxial growth of GaN on the surface of the surface-treated C-plane sapphire substrate 11 to produce a GaN film carrier having a surface of an N polar face; forming an ion implantation region 13.sub.ion by carrying out ion implantation on the GaN film 13; laminating and joining a support substrate 12 with the GaN film-side surface of the ion-implanted GaN film carrier; and separating at the ion-implanted region 13.sub.ion in the GaN film 13 to transfer a GaN thin film 13a onto the support substrate 12, to produce a GaN layered substrate 10 having, on the support substrate 12, a GaN thin film 13a having a surface of a Ga polar face. A GaN layered substrate having a good crystallinity and a surface of a Ga face is obtained by a single transfer process.

A surfacing material includes a substrate having a top side and a bottom side. A matte surface is formed on the bottom side thereof, wherein the matte surface of the surfacing material is a coating of an electron beam radiation curable material applied to the bottom side of the substrate. The coating is an epoxy acrylic or urethane acrylic laid upon the substrate. The epoxy acrylic or urethane acrylic is irradiated with UV-radiation to produce a UV-radiation layer wherein the epoxy acrylic or urethane acrylic is neither hardened nor is an entire layer of the epoxy acrylic or urethane acrylic crosslinked but rather the epoxy acrylic or urethane acrylic is only crosslinked on the surface thereof, which produces a matting surface through the effects of a micro-convolution.

Provided is a decorative sheet for laminating on a base having a thermal conductivity of less than 0.1 W/(m.Math.K) on a side to which the decorative sheet is bonded, wherein (1) the decorative sheet comprises non-halogen-based thermoplastic resin-containing layers, (2) at least one of the non-halogen-based thermoplastic resin-containing layers is a layer containing a non-halogen-based flame retardant, (3) the total thickness (?m) of the non-halogen-based thermoplastic resin-containing layers is referred to as x, and the percentage (mass %) of the total mass of the non-halogen-based flame retardant in the non-halogen-based thermoplastic resin-containing layers in 100 mass % of the total mass of the non-halogen-based thermoplastic resin-containing layers is referred to as y, and x and y satisfy the following equation (I),

[00001]$\begin{array}{cc}y?0.00008x^2+0.016x-2.51,& \left(I\right)\end{array}$ (4) the content of the non-halogen-based flame retardant in each of the layers containing a non-halogen-based flame retardant is 8 mass % or more.