A semiconductor device composed of a capacitive humidity sensor comprised of a moisture-sensitive polymer layer electrografted to an electrically conductive metal layer situated on an CMOS substrate or a combined MEMS and CMOS substrate, and exposed within an opening through a passivation layer, packages composed of the encapsulated device, and methods of forming the capacitive humidity sensor within the semiconductor device, are provided.

A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.

A method of processing a double sided wafer of a microelectromechanical device includes spinning a resist onto a first side of a first wafer. The method further includes forming pathways within the resist to expose portions of the first side of the first wafer. The method also includes etching one or more depressions in the first side of the first wafer through the pathways, where each of the depressions have a planar surface and edges. Furthermore, the method includes depositing one or more adhesion metals over the resist such that the one or more adhesion metals are deposited within the depressions, and then removing the resist from the first wafer. The method finally includes depositing indium onto the adhesion metals deposited within the depressions and bonding a second wafer to the first wafer by compressing the indium between the second wafer and the first wafer.

In an example of a method of making a flowcell, an organic solid support including sidewalls and a top is provided. A bottom surface of the organic solid support adjacent to the sidewalls provides a laser bonding foot. In the method, the laser bonding foot is bonded to an inorganic solid support to form a channel having sidewalls and a top defined by the organic solid support.

Methods for improving wafer bonding performance are disclosed herein. In some embodiments, a method for bonding a pair of semiconductor substrates is disclosed. The method includes: processing at least one of the pair of semiconductor substrates, and bonding the pair of semiconductor substrates together. Each of the pair of semiconductor substrates is processed by: performing at least one chemical vapor deposition (CVD), and performing at least one chemical mechanical polishing (CMP). One of the at least one CVD is performed after all CMP performed before bonding.

A micro-electro-mechanical system device is disclosed. The micro-mechanical system device comprises a first silicon substrate comprising: a handle layer comprising a first surface and a second surface, the second surface comprises a cavity; an insulating layer deposited over the second surface of the handle layer; a device layer having a third surface bonded to the insulating layer and a fourth surface; a piezoelectric layer deposited over the fourth surface of the device layer; a metal conductivity layer disposed over the piezoelectric layer; a bond layer disposed over a portion of the metal conductivity layer; and a stand-off formed on the first silicon substrate; wherein the first silicon substrate is bonded to a second silicon substrate, comprising: a metal electrode configured to form an electrical connection between the metal conductivity layer formed on the first silicon substrate and the second silicon substrate.

Provided is a method for producing a micro flow channel chip that is used for a treatment or analysis of a liquid sample, the method being capable of producing a micro flow channel chip with high shape accuracy and high efficiency. The method includes a step of forming a groove on one surface of a base material; a lamination step of forming an adhesive resin layer on at least one surface of a resin film, and thereby obtaining a first laminate; and an adhesion step of arranging the surface of the base material where a groove has been formed and the adhesive resin layer of the first laminate to face each other, and bonding the base material and the first laminate such that the adhesive resin layer covers the groove, in which the glass transition temperature of the adhesive resin layer is 25 C. or lower.

The invention provides a method of fabricating an electromechanical structure presenting a first substrate including a layer of monocrystalline material covered in a sacrificial layer that presents a free surface, the structure presenting a mechanical reinforcing pillar in the sacrificial layer, the method including etching a well region in the sacrificial layer to define a mechanical pillar; depositing a first functionalization layer of the first material to at least partially fill the well region and cover the free surface of the sacrificial layer around the well region; depositing a second material different from the first material for terminating the filling of the well region to thereby cover the first functionalization layer around the well region, planarizing the filler layer, the pillar being formed by the superposition of the first material and second material in the well region; and releasing the electromechanical structure by removing at least partially the sacrificial layer.

A method for bonding wafers eutectically, including the steps: (a) providing a first wafer having a first bonding layer and a second wafer having a second bonding layer and a spacer; (b) bringing the first wafer in juxtaposition with the second wafer, the spacer resting against the first bonding layer; (c) pressing the first wafer and the second wafer together, until the first bonding layer and the second bonding layer abut, the spacer penetrating the first bonding layer; (d) bonding the first wafer to the second wafer eutectically, by forming a eutectic alloy of at least parts of the first bonding layer and the second bonding layer. Also described is a eutectically bonded wafer composite and a micromechanical device having such a eutectically bonded wafer composite.

A method for bonding a contact surface of a first substrate to a contact surface of a second substrate comprising of the steps of: positioning the first substrate on a first receiving surface of a first receiving apparatus and positioning the second substrate on a second receiving surface of a second receiving apparatus; establishing contact of the contact surfaces at a bond initiation site; and bonding the first substrate to the second substrate along a bonding wave which is travelling from the bond initiation site to the side edges of the substrates, wherein the first substrate and/or the second substrate is/are deformed for alignment of the contact surfaces.