Devices and methods of manufacture for a deep trench layout area-saving semiconductor structure for use with bipolar-CMOS-DMOS (BCD) devices. A semiconductor device may comprise a first BCD device formed within a first perimeter of a first BCD layout area, and a deep trench isolation structure defining the first perimeter of the first BCD layout area, in which the deep trench isolation structure may comprise a first rounded corner that may define a first corner of the first BCD layout area. A semiconductor device may comprise, a substrate, BCD device formed on the substrate, and a deep trench isolation structure laterally surrounding the BCD device. The deep trench isolation structure, with respect to a top-down view, may comprise vertical portions, horizontal portions, a T-shaped intersection connecting at least one vertical portion and at least one horizontal portion, and a cross-shaped intersection connecting two vertical portions and two horizontal portions.

The present technology includes methods and systems for forming advanced memory structures, and devices therefrom. Methods include forming a dummy material layer over a first sidewall, a second sidewall, and a bottom surface, of one or more features, where the first sidewall is spaced apart from the second sidewall and the bottom surface is disposed between the first sidewall and the second sidewall. Methods include filling a gap formed between the dummy material on the first sidewall and the low resistivity material on the second sidewall with a sacrificial isolation material. Methods include removing at least a portion of the bottom surface, exposing at least a portion of the dummy material and the sacrificial isolation material. Methods include removing the sacrificial isolation material and at least a portion of the dummy material and selectively depositing a conductive material on a remaining portion of the dummy material.

A method for forming a charge balance region in a semiconductor device includes: providing an epitaxial layer on a substrate, whereby a diffusion layer is formed between the substrate and the epitaxial layer; forming a plurality of recessed features extending in a vertical direction in the epitaxial layer and laterally spaced apart from one another; forming an insulating layer on at least sidewalls of each of the recessed features; and forming a resistive film on the insulating layer and a bottom of each of the recessed features using atomic layer deposition. The resistive film is configured to provide a conductive path between an upper surface of the epitaxial layer and one of the diffusion layer, a lower portion of the epitaxial layer, or the substrate, whereby a current flowing through the resistive film fully depletes at least a portion of the epitaxial layer between adjacent recessed features.

A high voltage semiconductor device isolation structure and a method of manufacturing the same prevent a silicon penetration region from being formed between a first STI region and the side wall of a DTI region so that the breakdown voltage characteristic of a device is prevented from being decreased due to electric field concentration on the penetration region, and a method of manufacturing the same.

A method of making a semiconductor device is provided. A monolithic die having at least two semiconductor dies is provided. Each of the at least two semiconductor dies includes a substrate and an epitaxial layer formed on the substrate. An isolation structure is formed electrically isolating two semiconductor dies of the at least two semiconductor dies. The isolation structure traverses the thickness of the substrate and the epitaxial layer and includes a first isolation trench.

Embodiments of the present disclosure provide an integrated circuit including multiple source/drain physical dimensions for the same type devices co-exist in the same chip. Some embodiments provide methods for modulating source/drain physical dimension to fine-tune parasite capacitance, such as parasite capacitance between gate and drain Cgd, and resistance, such as resistance for source/drain contact Rc in analog or RF (radio frequency) devices.

Integrated circuit transistor structures are disclosed that reduce n-type dopant diffusion, such as phosphorous or arsenic, from the source region and the drain region of a germanium n-MOS device into adjacent shallow trench isolation (STI) regions during fabrication. The n-MOS transistor device may include at least 75% germanium by atomic percentage. In an example embodiment, the STI is doped with an n-type impurity, in regions of the STI adjacent to the source and/or drain regions, to provide dopant diffusion reduction. In some embodiments, the STI region is doped with an n-type impurity including Phosphorous in a concentration between 1 and 10% by atomic percentage. In some embodiments, the thickness of the doped STI region may range between 10 and 100 nanometers.

The present disclosure provides a semiconductor structure, including a transistor. The transistor includes a semiconductive substrate, a gate structure, a pair of highly doped regions and a dielectric element. The semiconductive substrate has a top surface. The gate structure is over the top surface. The pair of highly doped regions is separated by the gate structure. The dielectric element is embedded in the semiconductive substrate. The dielectric element is laterally and vertically misaligned with the pair of highly doped regions.

Different isolation liners for different type FinFETs and associated isolation feature fabrication are disclosed herein. An exemplary method includes performing a fin etching process on a substrate to form first trenches defining first fins in a first region and second trenches defining second fins in a second region. An oxide liner is formed over the first fins in the first region and the second fins in the second region. A nitride liner is formed over the oxide liner in the first region and the second region. After removing the nitride liner from the first region, an isolation material is formed over the oxide liner and the nitride liner to fill the first trenches and the second trenches. The isolation material, the oxide liner, and the nitride liner are recessed to form first isolation features (isolation material and oxide liner) and second isolation features (isolation material, nitride liner, and oxide liner).

A method of fabricating a semiconductor device includes forming a first shallow trench isolation structure in a first region of a substrate and second shallow trench isolation structures in a second region of the substrate. The method also includes forming a mask layer over the substrate, the first shallow trench isolation structure, and the second shallow trench isolation structures. The method further includes etching the mask layer and second shallow trench isolation structures in the second region sequentially to form a semiconductor protrusion between the second shallow trench isolation structures.