A semiconductor package includes a redistribution substrate, a chip stack structure disposed on the redistribution substrate and including a plurality of semiconductor chips disposed in a stack, a vertical wiring portion connecting the chip stack structure to the redistribution substrate and including a plurality of vertical wires that extend in a direction perpendicular to an upper surface of the redistribution substrate, a sealing member configured to seal at least a portion the chip stack structure and the vertical wiring portion, and a heat dissipation metal member disposed on side surfaces and an upper surface of the sealing member.

The present disclosure provides a packaging device and a method to form the packaging device. The packaging device includes a package base, a die structure disposed over the package base, and a package lid over the die structure. The package lid is thermally coupled with the die structure and the package base.

A semiconductor device has a substrate and encapsulant deposited over the substrate. An electrical connector is disposed over the substrate outside the encapsulant. An antenna can be formed over the substrate. A first shielding material is disposed over a portion of the encapsulant without covering the electrical connector with the first shielding material. The first shielding material is disposed over the portion of the encapsulant and the portion of the substrate using a direct jet printer. A cover is disposed over the electrical connector. A second shielding material is disposed over the encapsulant to prevent the second shielding material from reaching the electrical connector. The second shielding material overlaps the first shielding material and covers a side surface of the encapsulant and a side surface of the substrate. The cover is removed to expose the electrical connector free of shielding material.

A semiconductor device has a substrate. A semiconductor die is disposed over the substrate. A first encapsulant is deposited over the semiconductor die. A ferromagnetic film is disposed over the first encapsulant. A second encapsulant is deposited over the ferromagnetic film. A shielding layer is optionally formed over the substrate, first encapsulant, and second encapsulant.

A semiconductor device has a first RDL substrate with first conductive pillars formed over a first surface of the first RDL substrate. A first electrical component is disposed over the first surface of the first RDL substrate. A hybrid substrate is bonded to the first RDL substrate. An encapsulant is deposited around the hybrid substrate and first RDL substrate with the first conductive pillars and first electrical component embedded within the encapsulant. A second RDL substrate with second conductive pillars formed over the second RDL substrate and second electrical component disposed over the second RDL substrate can be bonded to the hybrid substrate. A second RDL can be formed over a second surface of the first RDL substrate. A third electrical component is disposed over a second surface of the first RDL substrate. A shielding frame is disposed over the third electrical component.

A semiconductor device has a substrate. A first electrical component and second electrical component are disposed over the substrate. A zero-ohm resistor is disposed over the substrate between the first electrical component and second electrical component. An encapsulant is deposited over the substrate, first electrical component, second electrical component, and first zero-ohm resistor. An opening is formed through the encapsulant to the first zero-ohm resistor. A shielding layer is formed over the encapsulant and into the opening.

A semiconductor device is formed using a jig. The jig includes a metal frame, a polymer film, and an adhesive layer disposed between the metal frame and polymer film. An opening is formed through the adhesive layer and polymer film. A groove is formed around the opening. A semiconductor package is disposed on the jig over the opening with a side surface of the semiconductor package adjacent to the groove. A shielding layer is formed over the semiconductor package and jig. The semiconductor package is removed from the jig.

A semiconductor device has a substrate and a slot formed in the substrate. A first electrical component is disposed over the substrate adjacent to the slot. An encapsulant is deposited over the first electrical component with a surface of the encapsulant coplanar to a surface of the substrate within the slot. A shielding layer is formed over the encapsulant and physically contacting the surface of the substrate within the slot. The substrate is singulated to form a semiconductor package with the first electrical component after forming the shielding layer.

In a general aspect, a superconducting via for routing electrical signals through a substrate includes the substrate and a layer formed of superconducting material. The substrate has a first orifice disposed on a first surface and a second orifice disposed on a second surface. A cavity extends through the substrate from the first orifice to the second orifice. The layer of superconducting material includes a first portion occluding the first orifice and having an exterior surface facing outward from the substrate. The layer also includes a second portion in contact with a side wall of the cavity an extending to the second orifice. A quantum circuit element may optionally be disposed on the first surface and electrically coupled to the exterior surface of the first portion of the layer.

An electronic package and a manufacturing method thereof are provided, in which a cover is disposed on a carrier structure having an electronic element, and the electronic element is covered by the cover. A magnetic conductive member is arranged between the cover and the electronic element, and an air gap is formed between the magnetic conductive member and the cover to enhance the shielding effect of the electronic package.