Disclosed is a microelectronic device assembly comprising a substrate having conductors exposed on a surface thereof. Two or more microelectronic devices are stacked on the substrate and the components are connected with conductive material in preformed holes in dielectric material in the bond lines aligned with TSVs of the devices and the exposed conductors of the substrate. Methods of fabrication are also disclosed.

A manufacturing method for a semiconductor device includes: obtaining a pre-processed semiconductor structure, wherein the pre-processed semiconductor structure comprises a metal layer (103) having a first exposed surface (1032), and the first exposed surface (1032) of the metal layer has a protrusion portion (1031); arranging a protective layer (104) on the first exposed surface (1032) of the metal layer, wherein the protective layer (104) at least covers part of the metal layer (103) that excludes the protrusion portion (1031); removing the protrusion portion (1031) to form on the metal layer (103) a second exposed surface (1033) of the metal layer (103); and forming a dielectric layer (105) on an area where the first exposed surface (1032) is located, wherein the dielectric layer (105) completely covers the area where the first exposed surface (1032) is located.

An electronic device manufacturing system including a substrate-holder configured to secure a substrate during processing and a controller, operatively coupled to the substrate-holder. The controller is configured to apply, to an electrode of the substrate-holder, a first voltage. The controller is further configured to determine a first impedance value between the substrate-holder and the substrate. The controller is further configured to determine a delta value between the first impedance value and a predetermined second impedance value, and determine whether the delta value satisfies a threshold criterion. Responsive to the delta value failing to satisfy the threshold criterion, the controller is further configured to apply a second voltage to the substrate, wherein the second voltage is greater than the first voltage.

Semiconductor structures and methods for manufacturing and testing semiconductor structures are provided. The semiconductor structures include an integrated circuit formed in a semiconductor substrate, a seal ring on at least a first side of the semiconductor substrate and surrounding a perimeter of the integrated circuit, an input element, an output element, and a backside metal die damage ring (BMDDR) disposed on the first side of the semiconductor substrate, extending through the semiconductor substrate, and disposed on a second side of the semiconductor substrate, the BMDDR disposed between the integrated circuit and the seal ring, the BMDDR at least partially surrounding the perimeter of the integrated circuit, the BMDDR coupled to and forming an electrical circuit between the input element and the output element.

A technical idea of a present invention provides a method for manufacturing a semiconductor package, comprising: a step of disposing a plurality of dies on a carrier while being spaced apart from each other in a horizontal direction; a first sawing step of sawing the carrier to separate the carrier into a plurality of sub-panels on which the plurality of dies are disposed; a step of testing the dies; and a second sawing step of sawing between each of the dies of the sub-panels to separate the sub-panels into individual semiconductor packages; wherein the carrier includes a plurality of first regions in which the dies are disposed and a second region in which the dies are not disposed, and wherein a first horizontal distance from a side of the carrier to the first region is smaller than a second horizontal distance from the first region to the first region.

A fabricating method for a test element group is provided. The fabricating method for a test element group includes fabricating test areas generated in a scribe lane area, wherein fabricating of the test areas includes forming a plurality of fins protruding in a first direction on a substrate, covering at least some of the plurality of fins with a masking material, and performing selective epitaxial growth by injecting a gas onto the plurality of fins. The gas is not injected onto the at least some of the plurality of fins that are covered with the masking material, such that the epitaxial growth does not occur on the fins covered with the masking material.

There is provided an electronic device including: a connection substrate which is provided with a plurality of capacitor structure portions; an electronic element which is provided above the connection substrate; connection wiring which connects the electronic element to the connection substrate, in which the plurality of capacitor structure portions have at least one connection capacitor portion which is connected to the connection wiring, and at least one non-connection capacitor portion which is not connected to the connection wiring. The non-connection capacitor portion may be a capacitor in a short state or an open state. The connection substrate may be a first semiconductor wafer.

A device in a chamber is provided. The device comprises at least one die. The at least one die comprise a first voltage generator, a dielectric layer and a first voltage regulator circuit. The first voltage generator is charged to have a first induced voltage by induced charges generated in response to a first voltage of a first electrode of a chuck in the chamber. The dielectric layer surrounds the first voltage generator to isolate the first voltage generator from the first electrode. The first voltage regulator circuit is coupled to the first voltage generator to receive the first induced voltage and generates a first power supply voltage according to the first induced voltage for a first circuit in the device.

A process condition measurement apparatus is disclosed. The apparatus includes a substrate, one or more insulation portions, a first plurality of interconnect traces, a second plurality of interconnect traces, and a plurality of sensors disposed on the substrate. The second plurality of interconnect traces is disposed over the first plurality of interconnect traces and intersects at a plurality of locations to form a matrix of interconnect junctions across one or more locations of the substrate. A respective sensor is electrically coupled to a respective trace of the first and second plurality of interconnect traces. The respective sensor is individually readable by addressing the respective trace of the first and second plurality of interconnect traces.

Methods and pad structures to test via accuracy are provided. A method according to the present disclosure includes forming a first pad and a second pad on a device component, wherein the second pad includes a via landing area and a clearance opening, providing a core substrate that includes a cavity, placing the device component in the cavity, forming a build-up film over the device component and the core substrate, forming a first contact via extending through the build-up film to contact the landing area and a second contact via extending through build-up film and the clearance opening, and performing a continuity test to determine whether the second contact via is in contact with the second pad.