A method for manufacturing an electroacoustic transducer includes a frame; an element movable relative to the frame, the movable element including a membrane and a membrane rigidifying structure; a first transmission arm, the movable element being coupled to one end of the first transmission arm; in which method the membrane of the movable element is moved away from the frame by using a sacrificial layer of greater thickness at least at the periphery of the membrane.

A micro electromechanical system (MEMS) includes a substrate, a semiconductor device and a protection wall. The substrate has a surface. The semiconductor device is disposed on the surface. The protection wall has a poly-silicon layer surrounding the semiconductor device and connecting to the surface.

A method for bonding with precision alignment. A first bonding surface is bonded with a second bonding surface, where features on the first and second bonding surfaces are precisely overlaid during the bonding. An etch is then performed on the first and/or second bonding surfaces to create recesses in the first and/or second bonding surfaces. Precision alignment of the first and second bonding surfaces is then enabled by a volatile fluid deployed between the first and second bonding surfaces, where the recesses enable removal of the volatile fluid from a bonding interface during and after the bonding.

A semiconductor device and method of forming the same are provided. The semiconductor device includes at least one substrate and an interconnection structure. The at least one substrate has a cavity partially defined by an inner sidewall of the at least one substrate and a channel disposed at a bottom of the at least one substrate. The channel laterally penetrates through the at least one substrate. The interconnections structure is disposed over the substrate, and the interconnection structure has a through hole penetrating through the interconnection structure. The through hole, the cavity and the channel are in spatial communication with each other.

Provided is a technique for stably forming a single nanopore by dielectric breakdown for a membrane having a high dielectric breakdown withstand voltage. In the nanopore forming method of the present disclosure, a SiNx film is placed between the first aqueous solution and the second aqueous solution, the first electrode is brought into contact with the first aqueous solution, and the second electrode is brought into contact with the second aqueous solution, and a voltage is applied to the first electrode and the second electrode. The SiNx film has a composition ratio of 1<x<4/3. At least any one of the first aqueous solution and the second aqueous solution has the pH of 10 or more.

An exemplary method includes forming a sacrificial layer along sidewalls of an array of trenches that are indented into a substrate, depositing a fill layer over the sacrificial layer, and then creating an array of gaps between the fill layer and the substrate by removing the sacrificial layer along the sidewalls of the trenches, while maintaining a structural connection between the substrate and the fill layer at the floors of the trenches. The method further includes covering the substrate, the fill layer, and the gaps with a cap layer that seal fluid-tight against the substrate and the fill layer. The method further includes indenting a first reservoir and a second reservoir through the cap layer, and into the substrate and the fill layer, across the lengths of the array of gaps, so that the array of gaps connects the first reservoir in fluid communication with the second reservoir.

A piezoelectric micromachined ultrasonic transducer (PMUT) includes a substrate, a stopper, and a membrane, where the substrate and the stopper are composed of same single-crystalline material. The substrate has a cavity penetrating the substrate, and the stopper protrudes from a top surface of the substrate and surrounds the edge of the cavity. The membrane is disposed over the cavity and attached to the stopper.

A method for fabricating a cantilever having a device surface, a tapered surface, and an end region includes providing a semiconductor substrate having a first side and a second side opposite to the first side and etching a predetermined portion of the second side to form a plurality of recesses in the second side. Each of the plurality of recesses comprises an etch termination surface. The method also includes anisotropically etching the etch termination surface to form the tapered surface of the cantilever and etching a predetermined portion of the device surface to release the end region of the cantilever.

In an embodiment a semiconductor transducer device includes a semiconductor body and a diaphragm having a first layer and a second layer, wherein a main extension plane of the diaphragm is arranged parallel to a surface of the semiconductor body, wherein the diaphragm is suspended at a distance from the semiconductor body in a direction perpendicular to the main extension plane of the diaphragm, wherein the second layer comprises titanium and/or titanium nitride, wherein the first layer comprises a material that is resistant to an etchant comprising fluorine or a fluorine compound, and wherein the second layer is arranged between the semiconductor body and the first layer.

In an embodiment a device includes a base layer, a support structure formed on the base layer, a side structure formed on the base layer and an elongated structure extending in a length direction in a device layer, wherein the elongated structure has a width in the device layer in a direction perpendicular to a length direction and a height in a direction out of the device layer and perpendicular to the length direction, wherein the elongated structure is delimited by two side surfaces and is supported on the support structure, and wherein at least a part of the side structure is arranged at a distance from the elongated structure in a width direction.