B81C2201/0133

Method and Structure for Sensors on Glass
20220009771 · 2022-01-13 ·

A method for providing a semiconductor layer arrangement on a substrate which comprises providing a semiconductor layer arrangement having a functional layer and a semiconductor substrate layer, attaching the semiconductor layer arrangement to a glass substrate layer such that the functional layer is arranged between the glass substrate layer and the semiconductor substrate layer, and removing the semiconductor substrate layer at least partially such that the glass substrate layer substitutes the semiconductor substrate layer as the substrate of the semiconductor layer arrangement.

Method of providing a plurality of through-holes in a layer of structural material
11174155 · 2021-11-16 · ·

A method of providing a MEMS device including a through-hole in a layer of structural material using a multitude of MEMS method steps. A versatile method to create a through-hole, in particular a multitude thereof, involves a step of exposing a polymeric layer of positive photoresist in a direction from the outer surface of the positive photoresist to light resulting in an exposed layer of positive photoresist including relatively strongly depolymerized positive photoresist in the top section of a recess while leaving relatively less strongly depolymerized positive photoresist in the bottom section of the recess.

PROCESS FOR MANUFACTURING A DEVICE FOR DETECTING ELECTROMAGNETIC RADIATION, COMPRISING A SUSPENDED DETECTION ELEMENT

A process for fabricating a device for detecting electromagnetic radiation includes the step of providing a detecting element suspended by a supporting pillar. The pillar has a lateral through-aperture formed via a local break in the continuity of a layer of interest, because of the presence of a jut in a vertical orifice.

METHOD FOR PRODUCING MICROSTRUCTURES
20210347637 · 2021-11-11 ·

A method for producing a microstructure in a substrate with a membrane-like bridging or overhanging surface includes modifying the substrate, which is made of glass, by laser radiation along a peripheral contour. A membrane layer is applied over a surface of the substrate for producing the bridging or overhanging surface, wherein, at least in partial surfaces enclosing the peripheral contour of the laser modifications, a sacrificial layer is disposed between the substrate and the membrane layer. A side of the substrate facing away from the membrane layer is exposed to an etching attack such that material is removed primarily along the peripheral contour until the sacrificial layer is reached and there is a disintegration or reduction of the sacrificial layer and a separation of a connection of a part of the substrate enclosed by the peripheral contour from the surrounding substrate and from the membrane layer.

CAVITY SOI SUBSTRATE
20220002142 · 2022-01-06 ·

A cavity SOI substrate that includes a first silicon substrate having a cavity; a second silicon substrate bonded to the first silicon substrate, wherein the second silicon substrate includes a first portion oppositely aligned with the cavity of the first silicon substrate and that is thicker than a second portion of the second silicon substrate that is bonded to the first silicon substrate; and a silicon oxide film interposed between the first silicon substrate and the second silicon substrate.

Methods of forming MEMS diaphragms including corrugations

A method of forming an acoustic transducer comprises providing a substrate and depositing a first structural layer on the substrate. The first structural layer is selectively etched to form at least one of an enclosed trench or an enclosed pillar thereon. A second structural layer is deposited on the first structural layer and includes a depression or a bump corresponding to the enclosed trench or pillar, respectively. At least the second structural layer is heated to a temperature above a glass transition temperature of the second structural layer causing the second structural layer to reflow. A diaphragm layer is deposited on the second structural layer such that the diaphragm layer includes at least one of a downward facing corrugation corresponding to the depression or an upward facing corrugation corresponding to the bump. The diaphragm layer is released, thereby forming a diaphragm suspended over the substrate.

Method and Structure for CMOS-MEMS Thin Film Encapsulation
20230278856 · 2023-09-07 ·

Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.

Extended acid etch for oxide removal

A preclean process may be omitted from a eutectic bonding sequence. To remove oxide from one or more surfaces of a device wafer of a micro-electromechanical-system (MEMS) structure, a duration of an acid-based etch process in the eutectic bonding sequence may be increased relative to the duration of the acid-based etch process when the preclean process is performed. The increased duration of the acid-based etch process enables the acid-based etch process to remove the oxide from the one or more surfaces of the device wafer without the use of a preceding preclean process. This reduces the complexity and cycle time of the eutectic bonding sequence, reduces the risk of stiction between suspended mechanical components of the MEMS structure, and/or reduces the likelihood that the MEMS structure may be rendered defective or inoperable during manufacturing, which increases process yield.

Method for producing fine structures in the volume of a substrate composed of hard brittle material

A method for producing a cavity in a substrate composed of hard brittle material is provided. A laser beam of an ultrashort pulse laser is directed a side surface of the substrate and is concentrated by a focusing optical unit to form an elongated focus in the substrate. Incident energy of the laser beam produces a filament-shaped flaw in a volume of the substrate. The filament-shaped flaw extends into the volume to a predetermined depth and does not pass through the substrate. To produce the filament-shaped flaw, the ultrashort pulse laser radiates in a pulse or a pulse packet having at least two successive laser pulses. After at least two filament-shaped flaws are introduced, the substrate is exposed to an etching medium which removes material of the substrate and widens the at least two filament-shaped flaws to form filaments. At least two filaments are connected to form a cavity.

Capacitive microphone with well-controlled undercut structure

The present invention provides a MEMS microphone comprising (i) a substrate layer, (ii) a fixed backplate, and (iii) an intermediate layer sandwiched between the substrate layer and the fixed backplate. The substrate layer has a first opening through the thickness of the substrate layer. The intermediate layer has a second opening through the thickness of the intermediate layer. The fixed backplate forms a ceiling of the second opening, and the second opening is larger than the first opening and extends into the first opening, forming a looped recess (“undercut”). The looped recess is defined by a looped ledge on the substrate, a looped sidewall around the second opening, and a looped ceiling from the fixed backplate. The looped sidewall and the looped ceiling are made of a same material.