Compounds are synthesized with bicyclic amidinate ligands attached to one or more metal atoms. These compounds are useful for the synthesis of materials containing metals. Examples include pure metals, metal alloys, metal oxides, metal nitrides, metal phosphides, metal sulfides, metal selenides, metal tellurides, metal borides, metal carbides, metal silicides and metal germanides. Techniques for materials synthesis include vapor deposition (chemical vapor deposition and atomic layer deposition), liquid solution methods (sol-gel and precipitation) and solid-state pyrolysis. Copper metal films are formed on heated substrates by the reaction of copper(I) bicyclic amidinate vapor and hydrogen gas, whereas reaction with water vapor produces copper oxide. Silver and gold films were deposited on surfaces by reaction of their respective bicyclic amidinate vapors with hydrogen gas. Reaction of cobalt(II) bis(bicyclic amidinate) vapor, ammonia gas and hydrogen gas deposits cobalt metal films on heated substrates, while reaction with ammonia produces cobalt nitride and reaction with water vapor produces cobalt oxide. Ruthenium metal films are deposited by reaction of ruthenium(II) bis(bicyclic amidinate) or ruthenium(III) tris(bicyclic amidinate) at a heated surface either with or without a co-reactant such as hydrogen gas or ammonia or oxygen. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices. Hafnium oxide films are deposited by reaction of hafnium(IV) tetrakis(bicyclic amidinate) with oxygen sources such as water, hydrogen peroxide or ozone. The HfO.sub.2 films have high dielectric constant and low leakage current, suitable for applications as an insulator in microelectronics. The films have very uniform thickness and complete step coverage in narrow holes.

Compounds are synthesized with bicyclic amidinate ligands attached to one or more metal atoms. These compounds are useful for the synthesis of materials containing metals. Examples include pure metals, metal alloys, metal oxides, metal nitrides, metal phosphides, metal sulfides, metal selenides, metal tellurides, metal borides, metal carbides, metal silicides and metal germanides. Techniques for materials synthesis include vapor deposition (chemical vapor deposition and atomic layer deposition), liquid solution methods (sol-gel and precipitation) and solid-state pyrolysis. Copper metal films are formed on heated substrates by the reaction of copper(I) bicyclic amidinate vapor and hydrogen gas, whereas reaction with water vapor produces copper oxide. Silver and gold films were deposited on surfaces by reaction of their respective bicyclic amidinate vapors with hydrogen gas. Reaction of cobalt(II) bis(bicyclic amidinate) vapor, ammonia gas and hydrogen gas deposits cobalt metal films on heated substrates, while reaction with ammonia produces cobalt nitride and reaction with water vapor produces cobalt oxide. Ruthenium metal films are deposited by reaction of ruthenium(II) bis(bicyclic amidinate) or ruthenium(III) tris(bicyclic amidinate) at a heated surface either with or without a co-reactant such as hydrogen gas or ammonia or oxygen. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices. Hafnium oxide films are deposited by reaction of hafnium(IV) tetrakis(bicyclic amidinate) with oxygen sources such as water, hydrogen peroxide or ozone. The HfO.sub.2 films have high dielectric constant and low leakage current, suitable for applications as an insulator in microelectronics. The films have very uniform thickness and complete step coverage in narrow holes.

Metal-organic frameworks are synthesized from either a high concentration synthesis where reaction solutions comprising increased reagent concentrations, or suspensions of reagents which exceed their solubility limit in the reaction solution in a high solids synthesis. In both approaches, the solubility of reagent is maximized by inclusion of a buffer, fixing a nominal pH of the reaction solution to allow metal-organic framework formation. These methods improve yields and scale up of metal-organic frameworks.

Metal-organic frameworks are synthesized from either a high concentration synthesis where reaction solutions comprising increased reagent concentrations, or suspensions of reagents which exceed their solubility limit in the reaction solution in a high solids synthesis. In both approaches, the solubility of reagent is maximized by inclusion of a buffer, fixing a nominal pH of the reaction solution to allow metal-organic framework formation. These methods improve yields and scale up of metal-organic frameworks.

The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first semiconducting layer comprising (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal borate complexes, wherein the metal borate complex consists of at least one metal cation and at least one anionic ligand consisting of at least six covalently bound atoms which comprises at least one boron atom,
wherein the first semiconducting layer is a hole injection layer, a hole-injecting part of a charge generating layer or a hole transport layer, a method for preparing the same and a respective metal borate compound.

The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first semiconducting layer comprising (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal borate complexes, wherein the metal borate complex consists of at least one metal cation and at least one anionic ligand consisting of at least six covalently bound atoms which comprises at least one boron atom,
wherein the first semiconducting layer is a hole injection layer, a hole-injecting part of a charge generating layer or a hole transport layer, a method for preparing the same and a respective metal borate compound.

The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first semiconducting layer comprising: (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal borate complexes, wherein the metal borate complex consists of at least one metal cation and at least one anionic ligand consisting of at least six covalently bound atoms which comprises at least one boron atom, wherein the first semiconducting layer is a hole injection layer, a hole-injecting part of a charge generating layer or a hole transport layer, a method for preparing the same and a respective metal borate compound.

The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first semiconducting layer comprising: (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal borate complexes, wherein the metal borate complex consists of at least one metal cation and at least one anionic ligand consisting of at least six covalently bound atoms which comprises at least one boron atom, wherein the first semiconducting layer is a hole injection layer, a hole-injecting part of a charge generating layer or a hole transport layer, a method for preparing the same and a respective metal borate compound.

Provided in the present invention is a preparation method for a nano organometallic carboxylate which effectively solves the problems of a complex washing process, and cumbersome, dangerous and uneconomical preparation of lye in traditional methods for producing organometallic carboxylates. A new method for preparing high-quality organometallic carboxylates by using a carboxylic acid, caustic soda, a metal oxide or a hydroxide as starting materials, and using ball milling to assist reaction thereof. The present invention not only efficiently utilizes lye, it also obtains high-quality organometallic carboxylates, which overcomes the technical prejudice that the prior art uses calcium chloride, sodium chloride and other salts for poor reaction efficiency. The problem in environmental pollution caused by the washing waste liquid in the existing process is fundamentally solved. At the same time, addition of non-ionic surfactants makes ball milling more efficient and significantly reduces the particle size of the product.

Provided in the present invention is a preparation method for a nano organometallic carboxylate which effectively solves the problems of a complex washing process, and cumbersome, dangerous and uneconomical preparation of lye in traditional methods for producing organometallic carboxylates. A new method for preparing high-quality organometallic carboxylates by using a carboxylic acid, caustic soda, a metal oxide or a hydroxide as starting materials, and using ball milling to assist reaction thereof. The present invention not only efficiently utilizes lye, it also obtains high-quality organometallic carboxylates, which overcomes the technical prejudice that the prior art uses calcium chloride, sodium chloride and other salts for poor reaction efficiency. The problem in environmental pollution caused by the washing waste liquid in the existing process is fundamentally solved. At the same time, addition of non-ionic surfactants makes ball milling more efficient and significantly reduces the particle size of the product.