Electronic devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a barium-strontium-titanium-tungsten-silicon oxide.

A method of growing a FE material thin film using physical vapor deposition by pulsed laser deposition or RF sputtering is disclosed. The method involves creating a target to be used for the pulsed laser deposition in order to create a KBNNO thin film. The resultant KBNNO thin film is able to be used in photovoltaic cells.

A method of growing a FE material thin film using physical vapor deposition by pulsed laser deposition or RF sputtering is disclosed. The method involves creating a target to be used for the pulsed laser deposition in order to create a KBNNO thin film. The resultant KBNNO thin film is able to be used in photovoltaic cells.

The present disclosure relates to a method for obtaining lead-free piezoelectric materials, including: Step S100, adjusting the T/O phase boundary of a first lead-free piezoelectric material: for the first lead-free piezoelectric material, adjusting the T/O phase boundary between the tetragonal phase T and the orthorhombic phase O to be near the room temperature by doping; Step S200, further adjusting the C/T phase boundary and the O/R phase boundary: further adjusting the C/T phase boundary between the cubic paraelectric phase C and the tetragonal phase T, and the O/R phase boundary between the orthorhombic phase O and the rhombohedral phase R by doping, so as to enable the C/T phase boundary and the O/R phase boundary to approach the T/O phase boundary; and Step S300, obtaining second lead-free piezoelectric materials: obtaining multiple second lead-free piezoelectric materials with different piezoelectric constants d.sub.33 and different Curie temperatures T.sub.C in the process.

The present disclosure relates to a method for obtaining lead-free piezoelectric materials, including: Step S100, adjusting the T/O phase boundary of a first lead-free piezoelectric material: for the first lead-free piezoelectric material, adjusting the T/O phase boundary between the tetragonal phase T and the orthorhombic phase O to be near the room temperature by doping; Step S200, further adjusting the C/T phase boundary and the O/R phase boundary: further adjusting the C/T phase boundary between the cubic paraelectric phase C and the tetragonal phase T, and the O/R phase boundary between the orthorhombic phase O and the rhombohedral phase R by doping, so as to enable the C/T phase boundary and the O/R phase boundary to approach the T/O phase boundary; and Step S300, obtaining second lead-free piezoelectric materials: obtaining multiple second lead-free piezoelectric materials with different piezoelectric constants d.sub.33 and different Curie temperatures T.sub.C in the process.

A transparent optical element may include a layer of an electroactive ceramic disposed between transparent electrodes, such that the electrodes are each oriented perpendicular to a non-polar direction of the ceramic layer. Optical properties of the optical element, including transmissivity, haze, and clarity may be improved by the application of a voltage to the electroactive ceramic, and an associated phase transformation.

A semiconductor ceramic composition represented by formula (1),

(Ba.sub.vBi.sub.xA.sub.yRE.sub.w).sub.m(Ti.sub.uTM.sub.z)O.sub.3  (1),

wherein, A represents at least one element selected from Na and K, RE represents at least one element selected from Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er;

0.750y≦x≦1.50y  (2),

0.007≦y≦0.125  (3),

0≦(w+z)≦0.010  (4),

v+x+y+w=1  (5),

u+z=1  (6),

0.950≦m≦1.050  (7),

0.001 to 0.055 mol of Ca is contained, and 0.0005 to 0.005 mol of at least one selected from Mg, Al, Fe, Co, Cu and Zn is contained.

A semiconductor ceramic composition represented by formula (1),

(Ba.sub.vBi.sub.xA.sub.yRE.sub.w).sub.m(Ti.sub.uTM.sub.z)O.sub.3  (1),

wherein, A represents at least one element selected from Na and K, RE represents at least one element selected from Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er;

0.750y≦x≦1.50y  (2),

0.007≦y≦0.125  (3),

0≦(w+z)≦0.010  (4),

v+x+y+w=1  (5),

u+z=1  (6),

0.950≦m≦1.050  (7),

0.001 to 0.055 mol of Ca is contained, and 0.0005 to 0.005 mol of at least one selected from Mg, Al, Fe, Co, Cu and Zn is contained.

Disclosed are embodiments of making a barium magnesium tantalate. The method can include providing barium magnesium tantalate and incorporating one of Ba.sub.2MgWO.sub.6, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.2MgWO.sub.6, Ba.sub.3LaTa.sub.3O.sub.12, Ba.sub.8LiTa.sub.5WO.sub.24, BaLaLiWO.sub.6, Ba.sub.4Ta.sub.2WO.sub.12, Ba.sub.2La.sub.2MgW.sub.2O.sub.12, BaLaLiWO.sub.6, Sr.sub.3LaTa.sub.3O.sub.12, and SrLaTaO.sub.12 into the barium magnesium tantalate to form a solid solution having a high Q value.

Disclosed are embodiments of making a barium magnesium tantalate. The method can include providing barium magnesium tantalate and incorporating one of Ba.sub.2MgWO.sub.6, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.2MgWO.sub.6, Ba.sub.3LaTa.sub.3O.sub.12, Ba.sub.8LiTa.sub.5WO.sub.24, BaLaLiWO.sub.6, Ba.sub.4Ta.sub.2WO.sub.12, Ba.sub.2La.sub.2MgW.sub.2O.sub.12, BaLaLiWO.sub.6, Sr.sub.3LaTa.sub.3O.sub.12, and SrLaTaO.sub.12 into the barium magnesium tantalate to form a solid solution having a high Q value.