A method for transferring an electronic device includes steps as follows. A flexible carrier is provided and has a surface with a plurality of electronic devices disposed thereon. A target substrate is provided corresponding to the surface of the flexible carrier. A pin is provided, and a pin end thereof presses on another surface of the flexible carrier without the electronic devices disposed thereon, so that the flexible carrier is deformed, causing at least one of the electronic devices to move toward the target substrate and to be in contact with the target substrate. A beam is provided to transmit at least a portion of the pin and emitted from the pin end to melt a solder. The electronic device is fixed on the target substrate by soldering. The pin is moved to restore the flexible carrier to its original shape, allowing the electronic device fixed by soldering to separate from the carrier.

A system for reflowing a semiconductor workpiece including a stage, a first vacuum module and a second vacuum module, and an energy source is provided. The stage includes a base and a protrusion connected to the base, the stage is movable along a height direction of the stage relative to the semiconductor workpiece, the protrusion operably holds and heats the semiconductor workpiece, and the protrusion includes a first portion and a second portion surrounded by and spatially separated from the first portion. The first vacuum module and the second vacuum module respectively coupled to the first portion and the second portion of the protrusion, and the first vacuum module and the second vacuum module are operable to respectively apply a pressure to the first portion and the second portion. The energy source is disposed over the stage to heat the semiconductor workpiece held by the protrusion of the stage.

A method and system for heat bonding a chip to a substrate by means of heat bonding material disposed there between. At least the substrate is preheated from an initial temperature to an elevated temperature below a damage temperature of the substrate. A light pulse applied to the chip momentarily increases the chip temperature to a pulsed peak temperature below a peak damage temperature of the chip. The momentarily increased pulsed peak temperature of the chip causes a flow of conducted heat from the chip to the bonding material, causing the bonding material to form a bond.

A method is disclosed for manufacturing a substrate soldered by a solder agent, which contains solder and a contained material that can be boiled at a temperature below a melting temperature of the solder. The method includes: setting the substrate onto a heat generation body heated to a first predetermined temperature, which is lower than a boiling point of the contained material and higher than an ordinary temperature; increasing a temperature of the substrate, which is set on the heat generation body, to a second predetermined temperature, which is lower than the melting temperature of the solder and is a reduction-enabling temperature, to reduce an oxide on the substrate by a reducing agent; and, after reduction, heating the substrate to a third predetermined temperature, which is equal to or higher than the melting temperature of the solder, to melt the solder. A soldering device includes a heating section, a chamber, a reducing agent supply section, and a controller configured to control a temperature of the heating section and supply of the reducing agent into the chamber to execute the above-described manufacturing method.

A system for reflowing a semiconductor workpiece including a stage, a first vacuum module and a second vacuum module, and an energy source is provided. The stage includes a base and a protrusion connected to the base, the stage is movable along a height direction of the stage relative to the semiconductor workpiece, the protrusion operably holds and heats the semiconductor workpiece, and the protrusion includes a first portion and a second portion surrounded by and spatially separated from the first portion. The first vacuum module and the second vacuum module respectively coupled to the first portion and the second portion of the protrusion, and the first vacuum module and the second vacuum module are operable to respectively apply a pressure to the first portion and the second portion. The energy source is disposed over the stage to heat the semiconductor workpiece held by the protrusion of the stage.

Examples are disclosed related to forming solder joints between printed circuits by using radiant heat. One example provides a method of manufacturing an electronic device, the method comprising aligning a contact of a first printed circuit with a via of a second printed circuit. The method further comprises applying radiant heat via an infrared light source to a second surface of the second printed circuit, the radiant heat incident on the via to cause the via to conduct heat to solder located at an interface of the contact and the via, and after heating the solder to reflow, cooling the solder, thereby forming a solder joint between the contact of the first printed circuit and the via of the second printed circuit.

An improved method for forming a capacitor is provided as is a capacitor, or electrical component, formed by the method. The method includes providing an aluminum containing anode with an aluminum oxide dielectric thereon; forming a cathode on a first portion of the aluminum oxide dielectric; bonding an anode lead to the aluminum anode on a second portion of the aluminum oxide by a transient liquid phase sintered conductive material thereby metallurgical bonding the aluminum anode to the anode lead; and bonding a cathode lead to said cathode.

A soldered product manufacturing device 1 includes a stage 13 on which a substrate W is placed, solder being arranged on the substrate W; a cover 16 configured to cover at least an upper part of the substrate W placed on the stage 13 at a predetermined distance therefrom; a chamber 11 configured to house the stage 13 and the cover 16; a heater 15 configured to heat the substrate W on the stage 13; and a reducing gas supply device 19 configured to supply a reducing gas F. A method for manufacturing a soldered product includes, by using the soldered product manufacturing device 1, placing the substrate W on the stage 13; covering the substrate W placed on the stage 13 with the cover 16; heating the substrate W; and supplying the reducing gas F into the chamber 11.

A radiative heat collective bonder or gangbonder for packaging a semiconductor die stack is provided. The bonder generally includes a shroud positioned at least partially around the die stack and a radiative heat source positioned inward of the shroud and configured to emit a radiative heat flux in a direction away from the shroud. The bonder may further include a bondhead configured to contact the backside of the topmost die in the die stack and optionally include another bondhead configured to contact a substrate beneath the die stack. The radiative heat source may be configured to direct the radiative heat flux to at least a portion of the die stack to reduce a vertical temperature gradient in the die stack. One or both of the bondheads may be configured to concurrently direct a conductive heat flux into the die stack.

A solder reflow oven may include a reflow chamber and a plurality of vertically spaced apart wafer-support plates positioned in the reflow chamber. A plurality of semiconductor wafers each including a solder are configured to be disposed in the reflow chamber such that each semiconductor wafer is disposed proximate to, and vertically spaced apart from, a wafer-support plate. Each wafer-support plate may include at least one of liquid-flow channels or resistive heating elements. A control system control the flow of a hot liquid through the channels or activate the heating elements to heat a wafer to a temperature above the solder reflow temperature.