A laser welding method is usable to weld a material containing copper as a main component. The laser welding method includes heating the material by irradiation with a first laser light and welding the material by irradiation of a portion, which has been irradiated with the first laser light, of the material with a second laser light with which an energy absorption rate of the copper contained in the material increases by an increase in a temperature of the material. A wavelength of the first laser light is 400 nm to 470 nm.

A method of operating an apparatus for laser annealing, includes reducing temporal or spatial coherency of a plurality of laser beams by beam superimposing; and reducing an electric field inner product magnitude of beams having the reduced temporal or spatial coherency by a fly eye lens array to reduce coherency, and/or by modifying a polarization state between the beams by beam superimposing.

A light source device includes an optical fiber; a beam light source configured to coaxially combine laser beams of different peak wavelengths to generate and emit a wavelength-combined beam; and an optical coupling device configured to allow the wavelength-combined beam emitted from the beam light source to be incident on the optical fiber. The optical coupling device includes a first cylindrical lens configured to focus the wavelength-combined beam in a first plane and having a first focal length, a second cylindrical lens configured to focus the wavelength-combined beam in a second plane and having a second focal length, and a third cylindrical lens having a third focal length greater than the first focal length and configured to focus the wavelength-combined beam in the first plane to be incident on the first cylindrical lens.

A cleaning method involves, in a first step, emitting a first laser light toward the surface of a steel material targeted for cleaning to clean the surface of the steel material. Next, in a second step, a second laser light is emitted toward the surface of the steel material to remove an oxide layer formed on the surface of the steel material due to irradiation with the first laser light. In this step, the oxide layer formed on the surface of the steel material is removed, by emitting the second laser light at a power in a range that does not cause a new oxide layer to form on the surface of the steel material.

The laser system may include a delay circuit unit, first and second trigger-correction units, and a clock generator. The delay circuit unit may receive a trigger signal, output a first delay signal obtained by delaying the trigger signal by a first delay time, and output a second delay signal obtained by delaying the trigger signal by a second delay time. The first trigger-correction unit may receive the first delay signal and output a first switch signal obtained by delaying the first delay signal by a first correction time. The second trigger-correction unit may receive the second delay signal and output a second switch signal obtained by delaying the second delay signal by a second correction time. The clock generator may generate a clock signal that is common to the delay circuit unit and the first and second trigger-correction units.

A semiconductor fabrication apparatus includes a source chamber being operable to generate charged particles; and a processing chamber integrated with the source chamber and configured to receive the charged particles from the source chamber. The processing chamber includes a wafer stage being operable to secure and move a wafer, and a laser-charged particles interaction module that further includes a laser source to generate a first laser beam; a beam splitter configured to split the first laser beam into a second laser beam and a third laser beam; and a mirror configured to reflect the third laser beam such that the third laser beam is redirected to intersect with the second laser beam to form a laser interference pattern at a path of the charged particles, and wherein the laser interference pattern modulates the charged particles by in a micron-zone mode for processing the wafer using the modulated charged particles.

A device for generating a laser line on a work plane includes a first laser light source configured to generate a first raw laser beam, a second laser light source configured to generate a second raw laser beam, and an optical arrangement configured to reshape the first raw laser beam to form a first illumination beam with a first caustic and a first beam profile, and reshape the second raw laser beam to form a second illumination beam with a second caustic and a second beam profile. The first illumination beam and the second illumination beam are directed with overlap on the work plane and define a joint illumination direction. The first beam profile and the second beam profile jointly form the laser line on the work plane. The optical arrangement is configured to position the first caustic and the second caustic offset from one another in the illumination direction.

A laser processing machine includes a condenser and a water pillar forming unit. The condenser condenses a laser beam emitted from a laser oscillator and irradiates it to a workpiece held on a chuck table. The water pillar forming unit is disposed on a lower end of the condenser and is configured to form a thread-shaped water pillar on a front side of the workpiece. The laser oscillator includes a first laser oscillator, which emits a first laser beam having a short pulse width, and a second laser oscillator, which emits a second laser beam having a long pulse width. After the laser beams emitted from the first and second laser oscillators have transmitted through the thread-shaped water pillar formed by the water pillar forming unit and have been irradiated to the workpiece, a plasma occurred in the water pillar forming unit applies processing to the workpiece.

A welding method includes: emitting a laser beam to a workpiece including a metal; and welding a portion of the workpiece to which the laser beam is emitted by melting. The laser beam includes a main power region and at least one auxiliary power region, power in the main power region is equal to or higher than power in each of the at least one auxiliary power region, and a power ratio of the power in the main power region and a total of the power in the at least one auxiliary power region is within a range of 144:1 to 1:1.

Collimator lens (21) and focusing lens (22) are provided with AR coating (23). AR coating (23) has a first reflectance for reflecting a first laser light higher than a second reflectance for reflecting a second laser light. Detector (25) detects diffusion light (DL) diffused by collimator lens (21) and focusing lens (22). Detector (25) has a first light receiving sensitivity for receiving the first laser light lower than a second light receiving sensitivity for receiving the second laser light.