A laser-machining device comprising a laser-radiation source to generate a laser beam and emit it along an optical path; a beam-splitting unit downstream of the laser-radiation source designed to split the laser beam into a bundle of partial beams; an optical control unit downstream of the beam-splitting unit comprising a reflective optical functional unit formed by an array of reflective microscanners, wherein the optical control unit is designed to select any desired number of partial beams in any desired spatial combination from the bundle of partial beams and direct them onto a workpiece, and to position and/or move at least one of those partial beams within a specified partial-beam scanning region of the respective partial beam using the microscanner of the array of microscanners assigned to the respective partial beam, and methods for laser machining a workpiece.

A wafer producing method includes a peel-off layer forming step of forming a peel-off layer by positioning a focused spot of a laser beam having a wavelength transmittable through an ingot to a depth corresponding to a thickness of the wafer to be produced from the ingot from a first end surface of the ingot and applying the laser beam to the ingot, a first chamfered portion forming step of forming a first chamfered portion by applying, from the first end surface side to a peripheral surplus region of the wafer, a laser beam having a wavelength absorbable by the wafer, a peeling-off step of peeling off the wafer to be produced, and a second chamfered portion forming step of forming a second chamfered portion by applying, from a peel-off surface side of the wafer, the laser beam having a wavelength absorbable by the wafer.

A method of laser machining a workpiece is provided, with a) generation of a machining laser beam and imaging of the machining laser beam on the workpiece with at least one optical element; b) machining of the workpiece with the imaged machining laser beam and generation of a cutting gap in the workpiece; c) monitoring of at least one geometric parameter of the cutting gap during step b); and d) regulating the monitored geometric parameter of the cutting gap during step c) for harmonisation with a target value of the geometric parameter of the cutting gap. Further provided is an apparatus for laser machining a workpiece.

A semiconductor mold laser cleaning device of an embodiment includes a laser generator oscillating a pulsed laser beam, an optical fiber transmitting the laser beam, a laser scanning module processing and transmitting the laser beam received through the optical fiber for cleaning the semiconductor mold, the laser scanning module including a laser beam collimator converting the laser beam scattered at one end of the optical fiber into parallel light, a Galvano laser scanner scanning the laser beam, a focal lens focusing the laser beam scanned by the Galvano laser scanner, and a final irradiation mirror redirecting the laser beam passed through the focal lens to deliver the redirected laser beam to the surface of the semiconductor mold, and a conveyance unit conveying the laser scanner module in an X-axis direction and/or a Y-axis direction such that the entire surface of the semiconductor mold can be cleaned.

A method of laser processing of a metallic material is described, by means of a focused laser beam having a predetermined transverse power distribution on at least one working plane of the metallic material, comprising the steps of: providing a laser beam emitting source; leading the laser beam along a beam transport optical path to a working head arranged in proximity to the material; collimating the laser beam along an optical axis of propagation incident on the material; focusing the collimated laser beam in an area of a working plane of the material; and conducting the focused laser beam along a working path on the metallic material comprising a succession of working areas, wherein the laser beam is shaped: by reflecting the collimated beam by means of a deformable, controlled surface reflecting element having a plurality of independently movable reflection areas, and by controlling the arrangement of the reflection areas to establish a predetermined transverse power distribution of the beam on at least one working plane of the metallic material as a function of the area of the current working plane and/or of the current direction of the working path on the metallic material.

A method of laser processing of a metallic material is described by means of a focused laser beam having a predetermined transverse power distribution on at least one working plane of the material, comprising the steps of: providing a laser beam emitting source; leading the laser beam along a beam transport optical path to a working head arranged in proximity to the material; collimating the laser beam along an optical axis of propagation incident on the material; focusing the collimated laser beam in an area of a working plane of the material; and conducting the focused laser beam along a working path on the metallic material comprising a succession of working areas, wherein the laser beam is shaped: by reflecting the collimated beam by means of a deformable controlled surface reflecting element having a plurality of independently movable reflection areas, and by controlling the arrangement of the reflection areas to establish a predetermined transverse power distribution of the beam on at least one working plane of the metallic material as a function of the area of the current working plane and/or of the current direction of the working path on the metallic material.

A semiconductor fabrication apparatus includes a source chamber being operable to generate charged particles; and a processing chamber integrated with the source chamber and configured to receive the charged particles from the source chamber. The processing chamber includes a wafer stage being operable to secure and move a wafer, and a laser-charged particles interaction module that further includes a laser source to generate a first laser beam; a beam splitter configured to split the first laser beam into a second laser beam and a third laser beam; and a mirror configured to reflect the third laser beam such that the third laser beam is redirected to intersect with the second laser beam to form a laser interference pattern at a path of the charged particles, and wherein the laser interference pattern modulates the charged particles by in a micron-zone mode for processing the wafer using the modulated charged particles.

The present invention relates to a laser welding method of pipe fittings that mainly provides an automated butt welding process for two pipe fittings to be welded, comprising a laser welding device setup step, a material loading step, a first welding step, a second welding step, a third welding step, and a return to the original position step. The welding zone at the butt joint location of the two pipe fittings to be welded is divided to undergo three procedures through the aforementioned steps, using a laser assembly in conjunction with a reflection assembly, to provide a consistent automated butt welding for two pipe fittings to be welded, in order to reduce the time consumed during the butt welding of pipe fittings and increase the speed of the production process.

Laser processing device (1) includes: laser-beam switching apparatus (70) that switches between a first optical path and a second optical path as an optical path along which a laser beam is to travel, the first optical path including first fiber (11), the second optical path including second fiber (21) that has a core diameter that is larger than a core diameter of first fiber (11); and processing head (80) that illuminates a same processed point on workpiece (900) with a laser beam that has passed through the first optical path or the second optical path. When illumination with laser beam that has passed through the first optical path is performed for a predetermined period of time, laser-beam switching apparatus (70) switches from the first optical path to the second optical path.

A machine learning device for learning a focal position offset of a laser processing apparatus. A data acquisition section acquires a learning dataset which includes data of a focal position command for a light-focusing optical system given to the laser processing apparatus and detection data of a physical quantity of light detected when a laser beam is emitted from a laser oscillator in accordance with a processing command including the focal position command. A learning section generates a learning model by using the learning dataset, which represents correlativity between the physical quantity of the detected light and the positional relationship of an effective light-focusing position of the light-focusing optical system relative to a workpiece. When performing processing, the physical quantity of light is detected so that a positional relationship between the workpiece and the effective light-focusing position during processing can be estimated from the detected quantity and the learning model.