The invention relates to a method for cutting off at least one portion (4), in particular a wafer, from a solid body (2). The method comprises at least the following steps: modifying the crystal lattice of the solid body (2) by means of a modifier (18), wherein a number of modifications (19) are produced to form a nonplanar, in particular convex, detachment region (8) in the interior of the solid body, wherein the modifications (19) are produced in accordance with predetermined parameters, wherein the predetermined parameters describe a relationship between a deformation of the portion (4) and a defined further treatment of the portion (4), detaching the portion (4) from the solid body (2).

There is provided a manufacturing method of a single-crystal silicon substrate by which the substrate is manufactured from a workpiece composed of single-crystal silicon manufactured in such a manner that a specific crystal plane included in the crystal planes {100} is exposed in each of a front surface and a back surface. The manufacturing method includes a separation layer forming step of forming separation layers including modified parts and cracks that extend from the modified parts inside the workpiece and a splitting-off step of splitting off the substrate from the workpiece with use of the separation layers as the point of origin after the separation layer forming step is executed. In the separation layer forming step, the separation layers are formed inside the workpiece composed of the single-crystal silicon by using a laser beam with such a wavelength as to be transmitted through the single-crystal silicon.

There is provided a manufacturing method of a single-crystal silicon substrate by which the substrate is manufactured from a workpiece composed of single-crystal silicon manufactured in such a manner that a specific crystal plane included in the crystal planes {100} is exposed in each of a front surface and a back surface. The manufacturing method includes a separation layer forming step of forming separation layers including modified parts and cracks that extend from the modified parts inside the workpiece and a splitting-off step of splitting off the substrate from the workpiece with use of the separation layers as the point of origin after the separation layer forming step is executed. In the separation layer forming step, the separation layers are formed inside the workpiece composed of the single-crystal silicon by using a laser beam with such a wavelength as to be transmitted through the single-crystal silicon.

A method for treating a solid layer includes: providing a multi-layer assembly having a carrier substrate and a solid layer bonded to the carrier substrate by a bonding layer, the solid layer having an exposed surface including a defined surface structure, the defined surface structure resulting from a removal, which is effected by a crack, from a donor substrate, at least in sections; processing the solid layer, which is arranged on the carrier substrate; and separating the solid layer from the carrier substrate by a destruction of the bonding layer.

A method for treating a solid layer includes: providing a multi-layer assembly having a carrier substrate and a solid layer bonded to the carrier substrate by a bonding layer, the solid layer having an exposed surface including a defined surface structure, the defined surface structure resulting from a removal, which is effected by a crack, from a donor substrate, at least in sections; processing the solid layer, which is arranged on the carrier substrate; and separating the solid layer from the carrier substrate by a destruction of the bonding layer.

A workpiece processing method includes holding a workpiece unit on a holding table and forming a division start point. The workpiece unit has a workpiece having a front side and a back side, and an additional member formed on the back side of the workpiece. The additional member is different in material from the workpiece. The workpiece unit is held on the holding table with the additional member opposed to the holding table. The division start point is formed by applying a laser beam to the front side of the workpiece with the focal point of the laser beam set inside the workpiece. The laser beam forms a modified layer inside the workpiece and simultaneously forming a division start point inside the additional member due to the leakage of the laser beam from the focal point toward the back side of the workpiece.

A workpiece processing method includes holding a workpiece unit on a holding table and forming a division start point. The workpiece unit has a workpiece having a front side and a back side, and an additional member formed on the back side of the workpiece. The additional member is different in material from the workpiece. The workpiece unit is held on the holding table with the additional member opposed to the holding table. The division start point is formed by applying a laser beam to the front side of the workpiece with the focal point of the laser beam set inside the workpiece. The laser beam forms a modified layer inside the workpiece and simultaneously forming a division start point inside the additional member due to the leakage of the laser beam from the focal point toward the back side of the workpiece.

A method of grinding a surface of a workpiece that has surface irregularities includes a first grinding step of grinding the surface of the workpiece by a predetermined amount of stock removal while keeping a measuring element of a height gauge out of contact with the surface of the workpiece, thereafter, a height difference measuring step of bringing the measuring element of the height gauge into contact with the surface of the workpiece and measuring a height difference of surface irregularities on the surface of the workpiece with the height gauge, and a second grinding step of, if the measured height difference is larger than a preset range, grinding the surface of the workpiece while keeping the measuring element of the height gauge in contact with the surface of the workpiece until the measured height difference falls within the preset range.

A device for producing and removing an internal contour from a planar substrate comprising: a beam-producing- and beam-forming arrangement which is configured to perform: a contour definition step wherein a laser beam is guided over the substrate to produce a plurality of individual zones of internal damage in a substrate material along a contour line defining the internal contour; a crack deformation step, wherein the laser beam is guided over the substrate and produces a plurality of individual zones of internal damage in the substrate material to form a plurality of crack line portions that lead away from the contour line into the internal contour; and a material removal-step, wherein a laser beam directed towards the substrate surface that inscribes a removal line through a thickness of the substrate at the internal contour causes the internal contour to detach from the substrate.

A device for producing and removing an internal contour from a planar substrate comprising: a beam-producing- and beam-forming arrangement which is configured to perform: a contour definition step wherein a laser beam is guided over the substrate to produce a plurality of individual zones of internal damage in a substrate material along a contour line defining the internal contour; a crack deformation step, wherein the laser beam is guided over the substrate and produces a plurality of individual zones of internal damage in the substrate material to form a plurality of crack line portions that lead away from the contour line into the internal contour; and a material removal-step, wherein a laser beam directed towards the substrate surface that inscribes a removal line through a thickness of the substrate at the internal contour causes the internal contour to detach from the substrate.