B23Q3/152

SUBSTRATE PROCESSING APPARATUS AND MANUFACTURING METHOD THEREOF

A substrate processing apparatus includes a substrate support unit including a chuck for supporting a substrate, a fluid supply unit that supplies a processing fluid to the substrate, and a recovery unit surrounding the chuck and recovering the supplied processing fluid. The substrate support unit includes an antistatic material in which milled carbon fibers (MCF) are blended into a perfluoroalkoxy alkane (PFA) resin.

SUBSTRATE PROCESSING APPARATUS AND MANUFACTURING METHOD THEREOF

A substrate processing apparatus includes a substrate support unit including a chuck for supporting a substrate, a fluid supply unit that supplies a processing fluid to the substrate, and a recovery unit surrounding the chuck and recovering the supplied processing fluid. The substrate support unit includes an antistatic material in which milled carbon fibers (MCF) are blended into a perfluoroalkoxy alkane (PFA) resin.

Electrostatic chuck with charge dissipation coating

An electrostatic chuck solves the problem of wafer sticking by providing conductive paths on raised embossments that are bridged together and are connected to ground that support the wafer substrate above the surface of the electrostatic chuck. Further, laterally spaced electrode patterns and electrode elements which are spaced laterally and longitudinally away from the raised embossments reduce or eliminate electrical coupling during wafer clamping between conductively coated embossments and the electrode elements, thereby creating a low resistance path for charges remaining on the wafer after declamping to promptly travel to ground. The conductive bridge and electrode pattern configuration also substantially reduces or eliminates any charge build up on the conductive bridge(s) during clamping in order that charge build up in “islands” (worn portions of the insulator layer of the main field area) do not affect the charge dissipation from the wafer substrate through the conductive bridges to ground.

Electrostatic chuck with charge dissipation coating

An electrostatic chuck solves the problem of wafer sticking by providing conductive paths on raised embossments that are bridged together and are connected to ground that support the wafer substrate above the surface of the electrostatic chuck. Further, laterally spaced electrode patterns and electrode elements which are spaced laterally and longitudinally away from the raised embossments reduce or eliminate electrical coupling during wafer clamping between conductively coated embossments and the electrode elements, thereby creating a low resistance path for charges remaining on the wafer after declamping to promptly travel to ground. The conductive bridge and electrode pattern configuration also substantially reduces or eliminates any charge build up on the conductive bridge(s) during clamping in order that charge build up in “islands” (worn portions of the insulator layer of the main field area) do not affect the charge dissipation from the wafer substrate through the conductive bridges to ground.

Electrostatic chuck having an annular outer region covered by an insulating film

An electrostatic chuck has a structure in which an electrostatic electrode is embedded in a disk-like ceramic plate and attracts a wafer that is placed on the ceramic plate and that has a diameter smaller than that of the ceramic plate by Johnsen-Rahbek force. The electrostatic chuck includes an insulating film that has an electric resistance larger than that of the ceramic plate in an annular region of a front surface of the ceramic plate from an outer circumferential edge of the ceramic plate to the inside of an outer circumferential edge of the wafer that is placed on the ceramic plate.

Electrostatic chuck having an annular outer region covered by an insulating film

An electrostatic chuck has a structure in which an electrostatic electrode is embedded in a disk-like ceramic plate and attracts a wafer that is placed on the ceramic plate and that has a diameter smaller than that of the ceramic plate by Johnsen-Rahbek force. The electrostatic chuck includes an insulating film that has an electric resistance larger than that of the ceramic plate in an annular region of a front surface of the ceramic plate from an outer circumferential edge of the ceramic plate to the inside of an outer circumferential edge of the wafer that is placed on the ceramic plate.

Mounting system for a grinding machine

A mounting system includes a magnet core arranged for positioning inside a magnet coil. The magnet core includes a cylindrical, elongate receiving region with a central axis, a rapid-mounting mandrel arranged for insertion into the cylindrical, elongate receiving region, and a discoid workpiece driver, detachably fastened to the rapid-mounting mandrel and extending normal to the central axis. A one of the magnet core or the rapid-mounting mandrel includes a rapid-mounting device for mounting the rapid-mounting mandrel in the magnet core. Example embodiments may includes the rapid-mounting device integrated into the magnet core or integrated into the rapid-mounting mandrel.

Mounting system for a grinding machine

A mounting system includes a magnet core arranged for positioning inside a magnet coil. The magnet core includes a cylindrical, elongate receiving region with a central axis, a rapid-mounting mandrel arranged for insertion into the cylindrical, elongate receiving region, and a discoid workpiece driver, detachably fastened to the rapid-mounting mandrel and extending normal to the central axis. A one of the magnet core or the rapid-mounting mandrel includes a rapid-mounting device for mounting the rapid-mounting mandrel in the magnet core. Example embodiments may includes the rapid-mounting device integrated into the magnet core or integrated into the rapid-mounting mandrel.

METHOD OF GRINDING AND TURNING A WORKPIECE

A method of grinding or turning a workpiece, such as a bearing workpiece, involves several steps. One step includes locating the bearing workpiece on a chuck with an axis of rotation of the chuck positioned off-center relative to an axis of the bearing workpiece. Another step includes determining an offset between the chuck's axis of rotation and the bearing workpiece's axis based on the off-center position between the chuck's axis of rotation and the bearing workpiece's axis. Yet another step includes determining a path of engagement of a grinding wheel relative to the bearing workpiece based on the offset previously determined between the chuck's axis of rotation and the bearing workpiece's axis.

METHOD OF GRINDING AND TURNING A WORKPIECE

A method of grinding or turning a workpiece, such as a bearing workpiece, involves several steps. One step includes locating the bearing workpiece on a chuck with an axis of rotation of the chuck positioned off-center relative to an axis of the bearing workpiece. Another step includes determining an offset between the chuck's axis of rotation and the bearing workpiece's axis based on the off-center position between the chuck's axis of rotation and the bearing workpiece's axis. Yet another step includes determining a path of engagement of a grinding wheel relative to the bearing workpiece based on the offset previously determined between the chuck's axis of rotation and the bearing workpiece's axis.