An apparatus for chemical mechanical polishing of a wafer includes a process chamber and a rotatable platen disposed inside the process chamber. A polishing pad is disposed on the platen and a wafer carrier is disposed on the platen. A slurry supply port is configured to supply slurry on the platen. A process controller is configured to control operation of the apparatus. A set of microphones is disposed inside the process chamber. The set of microphones is arranged to detect sound in the process chamber during operation of the apparatus and transmit an electrical signal corresponding to the detected sound. A signal processor is configured to receive the electrical signal from the set of microphones, process the electrical signal to enable detection of an event during operation of the apparatus, and in response to detecting the event, transmit a feedback signal to the process controller. The process controller is further configured to receive the feedback signal and initiate an action based on the received feedback signal.

A silicon wafer single-side polishing method that can significantly improve the stepped minute defect occurrence rate is provided. The silicon wafer single-side polishing method comprises: a first polishing step of performing polishing on one side of a silicon wafer under a first polishing condition; and a second polishing step of performing polishing on the silicon wafer under a second polishing condition in which at least one of an applied pressure and a relative speed in the first polishing condition is changed, after the first polishing step, wherein a polishing rate ratio according to the first polishing condition is higher than a polishing rate ratio according to the second polishing condition.

A method in which an acoustic sensor disposed in a polishing apparatus can be accurately calibrated is disclosed. In this method, polishing sounds of a substrate are acquired using an acoustic sensor; and then at least two distinctive sounds, having distinctive frequencies respectively, are selected from the acquired polishing sounds. Further, the at least two distinctive sounds are output from a sound source coupled to any of a polishing table, the acoustic sensor, and a substrate holder to cause the at least two distinctive sounds to be input to the acoustic sensor. Next, output values of the acoustic sensor are calibrated, such that the output values of the acoustic sensor relative to the at least two distinctive sounds come within an allowable range.

An apparatus for chemical mechanical polishing of a wafer includes a process chamber and a rotatable platen disposed inside the process chamber. A polishing pad is disposed on the platen and a wafer carrier is disposed on the platen. A slurry supply port is configured to supply slurry on the platen. A process controller is configured to control operation of the apparatus. A set of microphones is disposed inside the process chamber. The set of microphones is arranged to detect sound in the process chamber during operation of the apparatus and transmit an electrical signal corresponding to the detected sound. A signal processor is configured to receive the electrical signal from the set of microphones, process the electrical signal to enable detection of an event during operation of the apparatus, and in response to detecting the event, transmit a feedback signal to the process controller. The process controller is further configured to receive the feedback signal and initiate an action based on the received feedback signal.

A wafer polishing apparatus includes a base support; a polishing pad on the base support; a polishing head on an upper portion of the base support and configured to rotate; a polishing head support on the upper portion of the base support and connected to the polishing head, a retainer ring attached to a lower portion of the polishing head; an illumination device configured to provide light to at least a part of an inner surface of the retainer ring; and a camera device configured to capture an image of at least a part of the inner surface of the retainer ring while the polishing head rotates. The polishing head support may be configured to rotate on the base support such that the polishing head is on at least one of a treatment region or a maintenance region of the base support.

A polishing apparatus includes: a plurality of polishing heads for holding a wafer, a polishing pad for polishing the wafer, a rotatable turn table having the polishing pad attached thereto, a turn table driving mechanism for rotating the turn table, a plurality of wafer-detecting sensors for detecting coming off of the wafer from the polishing head during polishing, wherein the polishing apparatus has the wafer-detecting sensor disposed above peripheral portions of the respective polishing heads and on each downstream side in a rotation direction of the turn table with respect to the respective polishing heads. The polishing apparatus can detect coming off of a wafer from a polishing head during polishing more rapidly, and can prevent a breakage of the wafer thereby.

A polishing apparatus capable of enabling a user to know a frequency and a trend of a retry operation of retrying a substrate release operation is disclosed. The polishing apparatus includes: a substrate holder configured to press a substrate against a polishing pad; a fluid ejection system configured to eject a fluid into a gap between the substrate and a flexible membrane for releasing the substrate from a substrate holding surface; an operation controller configured to instruct the fluid ejection system to perform a retry operation of ejecting the fluid again in a case where the release of the wafer has failed; and a monitoring device configured to store a historical information of the retry operation.

Accuracy of detection of a fly out of a substrate from a polishing head is improved. A substrate processing apparatus includes a polishing table 350 to which a polishing pad 352 for polishing the substrate is attachable, a polishing head 302 for holding and pressing the substrate against the polishing pad 352, a retainer member disposed surrounding the polishing head 302, a retainer member pressurization chamber disposed adjacent to the retainer member, an arm 360 for holding and turning the polishing head 302, and a slip out detector 910 for detecting a fly out of the substrate from the polishing head 302 based on a turning torque of the arm 360 or based on a flow rate of a fluid supplied to the retainer member pressurization chamber.

In an embodiment, a system includes: a pad comprising a first side and a second side opposite the first side, wherein the first side is configured to receive a wafer during chemical mechanical planarization (CMP), and a platen adjacent the pad along the second side, wherein the platen comprises a suction opening that interfaces with the second side; a pump configured to produce suction at the suction opening to adhere the second side to the platen; and a sensor configured to collect sensor data characterizing a uniformity of adherence between the pad and the platen, wherein the pump is configured to produce the suction at the suction opening based on the sensor data.

In an embodiment, a system includes: a pad comprising a first side and a second side opposite the first side, wherein the first side is configured to receive a wafer during chemical mechanical planarization (CMP), and a platen adjacent the pad along the second side, wherein the platen comprises a suction opening that interfaces with the second side; a pump configured to produce suction at the suction opening to adhere the second side to the platen; and a sensor configured to collect sensor data characterizing a uniformity of adherence between the pad and the platen, wherein the pump is configured to produce the suction at the suction opening based on the sensor data.