Some implementations described herein relate to dispensing a slurry onto a polishing pad for a chemical-mechanical planarization (CMP) process. These implementations also involve rotating the polishing pad while the slurry is dispensed onto the polishing pad. Rotation of the polishing pad results in a traversal of the slurry radially outward toward a polishing pad outer edge of the polishing pad. The polishing pad includes a plurality of groove segments and a geometric patterns formed by the plurality of the groove segments impede the flow of the slurry to the polishing pad outer edge.

The present disclosure provides a polishing pad and a method of manufacturing a semiconductor device using the same. The method includes disposing a target layer on a semiconductor substrate and performing a chemical mechanical polishing process on the target layer using a polishing pad including a plurality of polishing protrusions facing the target layer. Each of the polishing protrusions includes a protruding portion and a surface layer at least partially covering the protruding portion, wherein the protruding portion is more elastic than the surface layer, and wherein the surface layer is harder than the protruding portion.

The present disclosure provides a polishing pad and a method of manufacturing a semiconductor device using the same. The method includes disposing a target layer on a semiconductor substrate and performing a chemical mechanical polishing process on the target layer using a polishing pad including a plurality of polishing protrusions facing the target layer. Each of the polishing protrusions includes a protruding portion and a surface layer at least partially covering the protruding portion, wherein the protruding portion is more elastic than the surface layer, and wherein the surface layer is harder than the protruding portion.

An abrasive article includes a first abrasive element, a second abrasive element, a resilient element having first and second major surfaces, and a carrier. The first element and the second abrasive element each comprises a first major surface and a second major surface. At least the first major surfaces of the first and second abrasive elements comprise a plurality of precisely shaped features. The abrasive elements comprise substantially inorganic, monolithic structures.

An abrasive article includes a first abrasive element, a second abrasive element, a resilient element having first and second major surfaces, and a carrier. The first element and the second abrasive element each comprises a first major surface and a second major surface. At least the first major surfaces of the first and second abrasive elements comprise a plurality of precisely shaped features. The abrasive elements comprise substantially inorganic, monolithic structures.

A polishing pad includes a textured polishing layer comprising a working surface and a second surface opposite the working surface. The textured polishing layer comprises a polymeric blend comprising thermoplastic urethane in an amount of between 40 and 95 wt. %, and styrenic copolymer in an amount of between 5 and 60 wt. %, based on the total weight of the textured polishing layer.

A polishing pad includes a textured polishing layer comprising a working surface and a second surface opposite the working surface. The textured polishing layer comprises a polymeric blend comprising thermoplastic urethane in an amount of between 40 and 95 wt. %, and styrenic copolymer in an amount of between 5 and 60 wt. %, based on the total weight of the textured polishing layer.

In the composition according to the embodiment, the content of an unreacted diisocyanate monomer in a urethane-based prepolymer may be controlled to control the physical properties thereof such as gelation time. Thus, since the micropore characteristics, polishing rate, and pad cut rate of a polishing pad obtained by curing the composition according to the embodiment may be controlled, it is possible to efficiently manufacture high-quality semiconductor devices using the polishing pad.

In the composition according to the embodiment, the content of an unreacted diisocyanate monomer in a urethane-based prepolymer may be controlled to control the physical properties thereof such as gelation time. Thus, since the micropore characteristics, polishing rate, and pad cut rate of a polishing pad obtained by curing the composition according to the embodiment may be controlled, it is possible to efficiently manufacture high-quality semiconductor devices using the polishing pad.

A method of using a polishing pad includes applying a slurry to a first location on the polishing pad. The method further includes rotating the polishing pad. The method further includes spreading the slurry across a first region of the polishing pad at a first rate, wherein the first region includes a plurality of first grooves, a first material property of the first region varies in a thickness direction of the polishing pad, each of the plurality of first grooves extends through at least two variations in the first material property, and the first material property comprises porosity, specific gravity or absorbance. The method further includes spreading the slurry across a second region of the polishing pad at a second rate different from the first rate, wherein the second region comprises a plurality of second grooves.