The present disclosure is intended to provide, as a polishing pad to which a window for an endpoint detection is applied, and in which the window is capable of providing improved polishing performance in terms of preventing defects, etc., by a specific structure due to the window, rather than negatively affecting polishing performance as a local heterogeneous component on the polishing pad, a polishing pad including: a polishing layer including a first surface that is a polishing surface and a second surface that is a rear surface thereof, and containing a first through-hole penetrating from the first surface to the second surface; a window disposed in the first through-hole; and a void between a side surface of the first through-hole and a side surface of the window, and a method for manufacturing a semiconductor device by applying the same.

The present disclosure is intended to provide, as a polishing pad to which a window for an endpoint detection is applied, and in which the window is capable of providing improved polishing performance in terms of preventing defects, etc., by a specific structure due to the window, rather than negatively affecting polishing performance as a local heterogeneous component on the polishing pad, a polishing pad including: a polishing layer including a first surface that is a polishing surface and a second surface that is a rear surface thereof, and containing a first through-hole penetrating from the first surface to the second surface; a window disposed in the first through-hole; and a void between a side surface of the first through-hole and a side surface of the window, and a method for manufacturing a semiconductor device by applying the same.

The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. It includes a polyurea polishing layer and a polyurea matrix. The polyurea has a soft segment being a copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix being cured with a curative agent and including gas or liquid-filled polymeric microelements. The polyurea matrix has a bulk region and a transition region adjacent the bulk region that extends to the polishing layer. The polymeric microelements in the transition region decrease in thickness as they approach the polishing layer with thickness of the compressed microelements adjacent the polishing layer being less than fifty percent of a diameter of the polymeric microelements in the bulk region. The polishing layer remains hydrophilic during polishing in shear conditions.

The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. It includes a polyurea polishing layer and a polyurea matrix. The polyurea has a soft segment being a copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix being cured with a curative agent and including gas or liquid-filled polymeric microelements. The polyurea matrix has a bulk region and a transition region adjacent the bulk region that extends to the polishing layer. The polymeric microelements in the transition region decrease in thickness as they approach the polishing layer with thickness of the compressed microelements adjacent the polishing layer being less than fifty percent of a diameter of the polymeric microelements in the bulk region. The polishing layer remains hydrophilic during polishing in shear conditions.

A manufacturing method of a polishing layer is provided. First, a mold for which the mold cavity has a contour pattern is provided, and the cross section of the contour pattern along a direction includes a plurality of recessions and at least one concavity portion, wherein the at least one concavity portion is disposed on the bottom of at least one of the recessions. A polymer material is disposed in the mold cavity. The polymer material is cured to form a semifinished product, wherein the cross section of the semifinished product along the direction includes a plurality of polishing portions corresponding to the recessions and at least one protruding portion corresponding to the at least one concavity portion. A flattening process is performed on the semifinished product to remove the at least one protruding portion.

A manufacturing method of a polishing layer is provided. First, a mold for which the mold cavity has a contour pattern is provided, and the cross section of the contour pattern along a direction includes a plurality of recessions and at least one concavity portion, wherein the at least one concavity portion is disposed on the bottom of at least one of the recessions. A polymer material is disposed in the mold cavity. The polymer material is cured to form a semifinished product, wherein the cross section of the semifinished product along the direction includes a plurality of polishing portions corresponding to the recessions and at least one protruding portion corresponding to the at least one concavity portion. A flattening process is performed on the semifinished product to remove the at least one protruding portion.

The present invention relates to a microballoon. The microballoon is made of polyurethane (urea). The microballoon is characterized in that an inner surface of the microballoon contains ionic groups. According to the present invention, through use for a CMP polishing pad, affinity with a slurry liquid for polishing is improved, and thus it is possible to provide a microballoon by which good polishing characteristics may be exhibited without lowering the resin strength of a polishing pad.

Provided are a polishing pad including a porous protrusion pattern, a polishing device including the same, and a manufacturing method of a polishing pad. The polishing pad includes a support layer, and a pattern layer disposed directly on the support layer, the pattern layer comprising a protrusion pattern having a plurality of pores. The pores contribute to an increase in perimeter length of the protrusion pattern in plan view, and a perimeter length of a polishing surface formed by the protrusion pattern per unit area is in a range of 1.0 mm/mm.sup.2 to 50.0 mm/mm.sup.2.

A chemical mechanical polishing apparatus includes a platen to support a polishing pad, the platen having a recess, a flexible membrane in the recess, and an in-situ vibration monitoring system to generate a signal. The in-situ acoustic monitoring system includes a vibration sensor supported by the flexible membrane and positioned to couple to an underside of the polishing pad.

Some implementations described herein relate to dispensing a slurry onto a polishing pad for a chemical-mechanical planarization (CMP) process. These implementations also involve rotating the polishing pad while the slurry is dispensed onto the polishing pad. Rotation of the polishing pad results in a traversal of the slurry radially outward toward a polishing pad outer edge of the polishing pad. The polishing pad includes a plurality of groove segments and a geometric patterns formed by the plurality of the groove segments impede the flow of the slurry to the polishing pad outer edge.