A method of detecting a polishing endpoint includes storing a plurality of library spectra, measuring a sequence of spectra from the substrate in-situ during polishing, and for each measured spectrum of the sequence of spectra, finding a best matching library spectrum from the plurality of library spectra to generate a sequence of best matching library spectra. Each library spectrum has a stored associated value representing a degree of progress through a polishing process, and the stored associated value for the best matching library spectrum is determined for each best matching library spectrum to generate a sequence of values representing a progression of polishing of the substrate. The sequence of values is compared to a target value, and a polishing endpoint is triggered when the sequence of values reaches the target value.

A method of detecting a polishing endpoint includes storing a plurality of library spectra, measuring a sequence of spectra from the substrate in-situ during polishing, and for each measured spectrum of the sequence of spectra, finding a best matching library spectrum from the plurality of library spectra to generate a sequence of best matching library spectra. Each library spectrum has a stored associated value representing a degree of progress through a polishing process, and the stored associated value for the best matching library spectrum is determined for each best matching library spectrum to generate a sequence of values representing a progression of polishing of the substrate. The sequence of values is compared to a target value, and a polishing endpoint is triggered when the sequence of values reaches the target value.

A polishing method is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. A method of polishing a substrate by a polishing apparatus includes a polishing table (100) having a polishing surface, a top ring (1) for holding a substrate and pressing the substrate against the polishing surface, and a vertically movable mechanism (24) for moving the top ring (1) in a vertical direction. The top ring (1) is moved to a first height before the substrate is pressed against the polishing surface, and then the top ring (1) is moved to a second height after the substrate is pressed against the polishing surface.

A polishing method is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. A method of polishing a substrate by a polishing apparatus includes a polishing table (100) having a polishing surface, a top ring (1) for holding a substrate and pressing the substrate against the polishing surface, and a vertically movable mechanism (24) for moving the top ring (1) in a vertical direction. The top ring (1) is moved to a first height before the substrate is pressed against the polishing surface, and then the top ring (1) is moved to a second height after the substrate is pressed against the polishing surface.

Disclosed are a detection method and a detection apparatus for a polishing pad of a chemical mechanical polishing device, particularly a detection method and a detection apparatus for detecting a surface of a polishing pad dynamically. An isolation region isolated by a gas to expose the polishing pad is formed by the detecting device, and a detection is performed on the isolation region, such that the chemical mechanical polishing device is capable of detecting the polishing pad without interrupting a manufacturing process and the detection results with more accurate can be achieved. Thereby, the polishing pad can be repaired and replaced more timely.

Disclosed are a detection method and a detection apparatus for a polishing pad of a chemical mechanical polishing device, particularly a detection method and a detection apparatus for detecting a surface of a polishing pad dynamically. An isolation region isolated by a gas to expose the polishing pad is formed by the detecting device, and a detection is performed on the isolation region, such that the chemical mechanical polishing device is capable of detecting the polishing pad without interrupting a manufacturing process and the detection results with more accurate can be achieved. Thereby, the polishing pad can be repaired and replaced more timely.

A grinding apparatus acquires a ground-off quantity of a wafer that is being ground, by subtracting a vertical length |(H0−H1)| by which grindstones are worn that is acquired by an upper surface height measuring instrument that is selectively lifted and lowered in unison with a grinding mechanism from a distance |(Z0−Z1)| by which the grinding mechanism is lowered that is acquired by a Z-axis encoder coupled with the grinding mechanism. Since the ground-off quantity of the wafer is acquired using the upper surface height measuring instrument and the Z-axis encoder, it is not necessary to determine the ground-off quantity of the wafer with use of only an upper surface height measuring instrument disposed on a foundation, as has been customary heretofore.

A polishing unit polishes a semiconductor wafer. An eddy current sensor measures an eddy current variable according to variation of the film thickness of the semiconductor wafer at plural measurement times. A sensor processor calculates the film thickness of the semiconductor wafer at the measurement times based on the eddy current measured by the eddy current sensor. A film thickness estimating unit estimates film thicknesses after lapse of a processing delay time from the measurement times by using the calculated film thickness.

A polishing unit polishes a semiconductor wafer. An eddy current sensor measures an eddy current variable according to variation of the film thickness of the semiconductor wafer at plural measurement times. A sensor processor calculates the film thickness of the semiconductor wafer at the measurement times based on the eddy current measured by the eddy current sensor. A film thickness estimating unit estimates film thicknesses after lapse of a processing delay time from the measurement times by using the calculated film thickness.

A polishing system performs chemical-mechanical polishing of an object to be polished using an abrasive slurry. The polishing system includes a polishing amount calculator that measures an amount of free metal ions of a metallic element derived from the object to be polished in a processed slurry and calculates a polishing amount of the object to be polished from the amount of the free metal ions. The object to be polished is a glass containing the metallic element of Group 1 or Group 2 of a periodic table.