B81B2201/0235

Sensor package

A sensor device may include a base layer, and an ASIC element disposed on the base layer. The ASIC element may include a plurality of electrical contact points. The sensor device may include a MEMS element. The MEMS element may include a plurality of through-silicon vias. The sensor device may include a plurality of conductive contact elements. Each conductive contact element may be disposed between, and electrically coupling, a respective through-silicon via and a respective electrical contact point. The sensor device may include a protective layer disposed between the ASIC element and the MEMS element. The protective layer may be composed of material(s) having a physical property defined to permit the protective layer to mitigate stress forces directed from the ASIC element to the MEMS element, to prevent corrosion, and/or to prevent leakage current between electrical connections due to pollution and/or humidity.

ENVIRONMENTAL SYSTEM-IN-PACKAGE FOR HARSH ENVIRONMENTS

A downhole sensor system includes a first sensor package having a substrate, an integrated circuit chip mounted to the substrate, the integrated circuit chip including a processor, a transducer chip mounted to the integrated circuit chip, and a plurality of sensors configured to measure at least shock, pressure, temperature, and humidity. At least one of the plurality of sensors is mounted to the transducer chip such that a stack is formed at least from the substrate, the integrated circuit, the transducer chip, and the sensor. The plurality of sensors are in communication with the processor.

Fully differential accelerometer
11714102 · 2023-08-01 · ·

Disclosed herein are aspects of a multiple-mass, multi-axis microelectromechanical systems (MEMS) accelerometer sensor device with a fully differential sensing design that applies differential drive signals to movable proof masses and senses differential motion signals at sense fingers coupled to a substrate. In some embodiments, capacitance signals from different sense fingers are combined together at a sensing signal node disposed on the substrate supporting the proof masses. In some embodiments, a split shield may be provided, with a first shield underneath a proof mass coupled to the same drive signal applied to the proof mass and a second shield electrically isolated from the first shield provided underneath the sense fingers and biased with a constant voltage to provide shielding for the sense fingers.

Packaging method and associated packaging structure

The present disclosure provides a packaging method, including: providing a first semiconductor substrate; forming a bonding region on the first semiconductor substrate, wherein the bonding region of the first semiconductor substrate includes a first bonding metal layer and a second bonding metal layer; providing a second semiconductor substrate having a bonding region, wherein the bonding region of the second semiconductor substrate includes a third bonding layer; and bonding the first semiconductor substrate to the second semiconductor substrate by bringing the bonding region of the first semiconductor substrate in contact with the bonding region of the second semiconductor substrate; wherein the first and third bonding metal layers include copper (Cu), and the second bonding metal layer includes Tin (Sn). An associated packaging structure is also disclosed.

Systems and methods for thermally regulating sensor operation
11703522 · 2023-07-18 · ·

A thermal regulation system includes a sensor, one or more temperature adjusting devices, and a filler provided in a space between the sensor and at least one of the one or more temperature adjusting devices. The one or more temperature adjusting devices are (1) in thermal communication with the sensor, and (2) configured to adjust a temperature of the sensor from an initial temperature to a predetermined temperature at a rate of temperature change that meets or exceeds a threshold value.

INERTIAL SENSOR, METHOD FOR MANUFACTURING INERTIAL SENSOR, AND INERTIAL MEASUREMENT UNIT
20230221346 · 2023-07-13 ·

An inertial sensor 1 includes: a base body; a lid body facing the base body; a functional element disposed in a cavity between the base body and the lid body and including a semiconductor layer; an adhesive layer disposed in a peripheral region surrounding the cavity and adhering the base body and the lid body to each other; and a sealer configured to seal a hole which communicates the cavity with an outside and which is disposed in the peripheral region. The sealer is provided in contact with the lid body and the base body, and includes a material of the lid body and a material of the adhesive layer.

Micromechanical device with elastic assembly having variable elastic constant

A micromechanical device includes a semiconductor body, a first mobile structure, an elastic assembly, coupled to the first mobile structure and to the semiconductor body and adapted to undergo deformation in a direction, and at least one abutment element. The elastic assembly is configured to enable an oscillation of the first mobile structure as a function of a force applied thereto. The first mobile structure, the abutment element and the elastic assembly are arranged with respect to one another in such a way that: when the force is lower than a force threshold, the elastic assembly operates with a first elastic constant; and when the force is greater than the threshold force, then the first mobile structure is in contact with the abutment element, and a deformation of the elastic assembly is generated, which operates with a second elastic constant different from the first elastic constant.

Structure for microelectromechanical systems (MEMS) devices to control pressure at high temperature

Various embodiments of the present disclosure are directed towards a method for manufacturing an integrated chip, the method comprises forming an interconnect structure over a semiconductor substrate. An upper dielectric layer is formed over the interconnect structure. An outgas layer is formed within the upper dielectric layer. The outgas layer comprises a first material that is amorphous. A microelectromechanical systems (MEMS) substrate is formed over the interconnect structure. The MEMS substrate comprises a moveable structure directly over the outgas layer.

Semiconductor device including a microelectromechanical structure and an associated integrated electronic circuit

An integrated semiconductor device includes: a MEMS structure; an ASIC electronic circuit; and conductive interconnection structures electrically coupling the MEMS structure to the ASIC electronic circuit. The MEMS structure and the ASIC electronic circuit are integrated starting from a same substrate including semiconductor material; wherein the MEMS structure is formed at a first surface of the substrate, and the ASIC electronic circuit is formed at a second surface of the substrate, vertically opposite to the first surface in a direction transverse to a horizontal plane of extension of the first surface and of the second surface.

Accelerometer having a root-mean-square (RMS) output

Accelerometers are described herein that have RMS outputs. For instance, an example accelerometer may include a MEMS device and an ASIC. The MEMS device includes a structure having an attribute that changes in response to acceleration of an object. The ASIC determines acceleration of the object based at least in part on changes in the attribute. The ASIC includes analog circuitry, an ADC, and firmware. The analog circuitry measures the changes in the attribute and generates analog signals that represent the changes. The ADC converts the analog signals to digital signals. The firmware includes RMS firmware. The RMS firmware performs an RMS calculation on a representation of the digital signals to provide an RMS value that represents an amount of the acceleration of the object.