A MEMS infrared sensing device includes a substrate and an infrared sensing component. The infrared sensing component is provided above the substrate. The infrared sensing component includes a sensing plate and at least one supporting element. The sensing plate includes at least one infrared absorbing layer, an infrared sensing layer, a sensing electrode and a plurality of metallic elements. The sensing plate has a plurality of openings. The metallic elements respectively surround the openings. The sensing electrode is connected with the infrared sensing layer, and the metallic elements are spaced apart from one another. The supporting element connecting the sensing plate with the substrate.

A MEMS infrared sensing device includes a substrate and an infrared sensing element. The infrared sensing element is provided above the substrate and has a sensing area and an infrared absorbing area which do not overlap each other. The infrared sensing element includes two infrared absorbing structures, an infrared sensing layer provided between the two infrared absorbing structures, and an interdigitated electrode structure located in the sensing area. Each of the two infrared absorbing structures includes at least one infrared absorbing layer, and the two infrared absorbing structures are located in the sensing area and the infrared absorbing area. The infrared sensing layer is located in the sensing area and does not extend into the infrared absorbing area. The interdigitated electrode structure is in electrical contact with the infrared sensing layer.

A system includes an array of chemical, pressure, and temperature sensors, and a temporal airflow modulator configured to provide sniffed vapors in a temporally-modulated sequence through a plurality of different air paths across multiple sensor locations.

A sensor chip includes a first substrate with a first surface and a second surface including at least one CMOS circuit, a first MEMS substrate with a first surface and a second surface on opposing sides of the first MEMS substrate, a second substrate, a second MEMS substrate, and a third substrate including at least one CMOS circuit. The first surface of the first substrate is attached to a packaging substrate and the second surface of the first substrate is attached to the first surface of the first MEMS substrate. The second surface of the first MEMS substrate is attached to the second substrate. The first substrate, the first MEMS substrate, the second substrate and the packaging substrate are provided with electrical inter-connects.

A semiconductor package device and a method of manufacturing a semiconductor package device are provided. The semiconductor package device includes a substrate, a first electronic component, a first dielectric layer, and a first hole. The substrate has a first surface and a second surface opposite to the first surface. The first electronic component is disposed on the first surface. The first dielectric layer is disposed on the second surface and has a third surface away from the substrate. The first hole extends from the first dielectric layer and the substrate. The first hole is substantially aligned with the first electronic component.

A downhole sensor system includes a first sensor package having a substrate, an integrated circuit chip mounted to the substrate, the integrated circuit chip including a processor, a transducer chip mounted to the integrated circuit chip, and a plurality of sensors configured to measure at least shock, pressure, temperature, and humidity. At least one of the plurality of sensors is mounted to the transducer chip such that a stack is formed at least from the substrate, the integrated circuit, the transducer chip, and the sensor. The plurality of sensors are in communication with the processor.

A MEMS temperature sensor including a clamped-clamped microbeam having a drive electrode on one side configured for applying an AC current, and a sense electrode diagonally situated on the other side, a first anchor at one end and a second anchor at the other end of the microbeam. The first anchor receive a DC bias currents, which heats the microbeam to an operating temperature. The sense electrode is configured to capacitively sense oscillations in the microbeam due to an applied AC current. The MEMS temperature sensor has a three wafer construction in which the components are formed. The device is encapsulated by aluminum, and metal wires connect the first and second anchor, the drive electrode and the sense electrode to side electrode pads outside of the encapsulation. The MEMS temperature sensor has a linear operating region of 30-60 degrees Celsius.

The invention relates to a method for fabricating a detection device, comprising the following steps: producing thermal detectors and an encapsulating structure by way of mineral sacrificial layers; partially removing the mineral sacrificial layers, by wet chemical etching in an acid medium, so as to free the thermal detectors and to obtain a peripheral wall, and to free an upper portion of the encapsulating thin layer; the peripheral wall then having a lateral recess resulting in a vertical enlargement of the cavity, between the readout substrate and the upper portion, this lateral recess defining an intermediate area; producing reinforcing pillars, arranged in the intermediate area around the matrix-array of thermal detectors.

A semiconductor device may include a first substrate, a first electrical component, a lid, a second substrate, and a second electrical component. The first substrate may include an upper surface, a lower surface, and an upper cavity in the upper surface. The first electrical component may reside in the upper cavity of the first substrate. The lid may cover the upper cavity and may include a port that permits fluid to flow between an environment external to the semiconductor device and the upper cavity. The second substrate may include the second electrical component mounted to an upper surface of the second substrate. The lower surface of the first substrate and the upper surface of the second substrate may fluidically seal the second electrical component from the upper cavity.

A MEMS structure including a latch, a first lever, and a second lever. The first lever is designed to move past the latch as a result of flexure in the event of a change in a parameter in a first direction, and to latch in place at the latch if a change in the parameter in a second direction different than the first direction subsequently takes place. The second lever is designed to move past the first lever as a result of flexure in the event of the change in the parameter in the second direction, and to latch in place at the first lever if a change in the parameter in the first direction takes place after the change in the parameter in the second direction.