Patent classifications
B81B2201/0292
MEMS SENSOR WITH HIGH VOLTAGE SWITCH
A system and/or method for utilizing MEMS switching technology to operate MEMS sensors. As a non-limiting example, a MEMS switch may be utilized to control DC and/or AC bias applied to MEMS sensor structures. Also for example, one or more MEMS switches may be utilized to provide drive signals to MEMS sensors (e.g., to provide a drive signal to a MEMS gyroscope).
ENVIRONMENTAL SYSTEM-IN-PACKAGE FOR HARSH ENVIRONMENTS
A downhole sensor system includes a first sensor package having a substrate, an integrated circuit chip mounted to the substrate, the integrated circuit chip including a processor, a transducer chip mounted to the integrated circuit chip, and a plurality of sensors configured to measure at least shock, pressure, temperature, and humidity. At least one of the plurality of sensors is mounted to the transducer chip such that a stack is formed at least from the substrate, the integrated circuit, the transducer chip, and the sensor. The plurality of sensors are in communication with the processor.
Inclination sensor system
An inclination sensor system for a mobile work machine includes a MEMS inclination sensor and a further inclination sensor of a different type and a fusion device. The inclination sensor is configured to output a first inclination signal on the basis of an inclination that exists at the inclination sensor. The further inclination sensor is configured to output a second inclination signal on the basis of the inclination that exists at the further inclination sensor. The fusion device is configured to calculate a corrected inclination signal on the basis of the first and second inclination signals and to output same as the corrected inclination signal.
MEMS apparatus with anti-stiction layer
The present disclosure relates to a microelectromechanical systems (MEMS) apparatus. The MEMS apparatus includes a base substrate and a conductive routing layer disposed over the base substrate. A bump feature is disposed directly over the conductive routing layer. Opposing outermost sidewalls of the bump feature are laterally between outermost sidewalls of the conductive routing layer. A MEMS substrate is bonded to the base substrate and includes a MEMS device directly over the bump feature. An anti-stiction layer is arranged on one or more of the bump feature and the MEMS device.
Sensor Device with Cover Layer
A sensor device includes a substrate, a sensing layer formed over the substrate, and a cover layer at least partially covering the sensing layer and protecting the sensing layer. The cover layer is a porous material or has a plurality of openings.
Semiconductor device
A semiconductor device may include a first substrate, a first electrical component, a lid, a second substrate, and a second electrical component. The first substrate may include an upper surface, a lower surface, and an upper cavity in the upper surface. The first electrical component may reside in the upper cavity of the first substrate. The lid may cover the upper cavity and may include a port that permits fluid to flow between an environment external to the semiconductor device and the upper cavity. The second substrate may include the second electrical component mounted to an upper surface of the second substrate. The lower surface of the first substrate and the upper surface of the second substrate may fluidically seal the second electrical component from the upper cavity.
FORCE-MEASURING DEVICE ASSEMBLY FOR A PORTABLE ELECTRONIC APPARATUS, A PORTABLE ELECTRONIC APPARATUS, AND A METHOD OF MODIFYING A SPAN OF A SENSE REGION IN A FORCE-MEASURING DEVICE ASSEMBLY
A force-measuring device (FMD) assembly for a portable electronic apparatus includes a mid-frame including a base portion, a sidewall portion, and a transition region between the base portion and the sidewall portion, and force-measuring devices coupled to the inner surface of the sidewall portion. The sidewall portion and the transition region are elongate along a longitudinal axis. FMDs are coupled to the inner surface at respective contact regions of the sidewall portion and are separated from each other along the longitudinal axis. Each of the FMDs includes strain-sensing element(s). Each of the FMDs corresponds to a respective sense region of the sidewall portion. The transition region includes a respective elongate slit or trough for each of the sense regions. The respective elongate slit or trough is elongate along the longitudinal axis. Adjacent elongate slits or troughs are separated by a respective rib.
3D-structured sensors having stretchable multi-functional tactile electronic hairs
A sensor comprising a support and a flexible structure arranged on the support is provided. The flexible structure comprises a frustum-shaped portion having a wider end and a narrower end, wherein the wider end of the frustum-shaped portion is arranged proximal to the support, and an elongated portion extending from the narrower end of the frustum-shaped portion, wherein the flexible structure further comprises a stretchable conducting film arranged on the frustum-shaped portion. A method of preparing such a sensor is also provided.
Photoacoustic sensors and MEMS devices
A photoacoustic sensor includes a first MEMS device and a second MEMS device. The first MEMS device includes a first MEMS component including an optical emitter, and a first optically transparent cover wafer-bonded to the first MEMS component, wherein the first MEMS component and the first optically transparent cover form a first closed cavity. The second MEMS device includes a second MEMS component including a pressure detector, and a second optically transparent cover wafer-bonded to the second MEMS component, wherein the second MEMS component and the second optically transparent cover form a second closed cavity.
SENSOR CHIP WITH A PLURALITY OF INTEGRATED SENSOR CIRCUITS
The present disclosure relates to a sensor chip, including a semiconductor substrate, a first sensor circuit monolithically integrated into the semiconductor substrate, at least one second sensor circuit monolithically integrated into the semiconductor substrate, wherein the first and second integrated sensor circuits are embodied identically.