Integrated circuits having shielded micro-electromechanical system (MEMS) devices and method for fabricating shielded MEMS devices are provided. In an example, an integrated circuit having a shielded MEMS device includes a substrate, a ground plane including conductive material over the substrate, and a dielectric layer over the ground plane. The integrated circuit further includes a MEMS device over the ground plane. Also, the integrated circuit includes a conductive pillar through the dielectric layer and in contact with the ground plane. The integrated circuit includes a metallic thin film over the MEMS device and in contact with the conductive pillar, wherein the metallic thin film, the conductive pillar and the ground plane form an electromagnetic shielding structure surrounding the MEMS device. Further, the integrated circuit includes an acoustic shielding structure over the substrate and adjacent the electromagnetic shielding structure.

The present invention discloses a system for protecting a MEMS product from an ESD event, including, a control circuit; a MEMS product, electrically connected with the control circuit; an ESD protection device, electrically connected with the control circuit, and electrically connected with the MEMS product in parallel; wherein, the ESD protection device comprises: a top electrode assembly electrically connected with the control circuit; a flexible beam comprising a first electrode layer electrically connected with the control circuit, a second electrode layer electrically connected with the MEMS product, and a moving metal contact electrically connected with the second electrode layer; a bottom electrode assembly having a bottom electrode layer electrically connected with the MEMS product and a fixed metal contact electrically connected with the bottom electrode layer and facing the moving metal contact.

A digital micromirror device comprises an array of micromirror pixels, the array comprising a first micromirror pixel and a second micromirror pixel. The first micromirror pixel comprises a hinge, where the hinge is configured to tilt toward a first raised address electrode and toward a second raised address electrode. The first micromirror pixel also comprises a first micromirror coupled to the hinge, where the first micromirror has a sculpted edge. The second micromirror pixel comprises a second micromirror, where a first gap between a first point on the sculpted edge and a nearest point to the first point on the second micromirror is larger than a second gap between a second point on the sculpted edge and a nearest point to the second point on the second micromirror.

A semiconductor device includes first and second exposed electrical contacts and a cavity having a microelectromechanical system (MEMS) structure therein. A conductive path extends from the first exposed electrical contact to the cavity and an over-voltage protection element electrically is coupled between the first and second exposed electrical contacts.

A pressure sensor device includes a semiconductor die having a die surface that includes a pressure sensitive area; and a bond wire bonded to a first peripheral region of the die surface and extends over the die surface to a second peripheral region of the die surface, wherein the pressure sensitive area is interposed between the second peripheral region and the first peripheral region, wherein the bond wire comprises a crossing portion that overlaps an area of the die surface, and wherein the crossing portion extends over the pressure sensitive area that is interposed between the first and the second peripheral regions.

The present invention discloses a system for protecting a MEMS product from an ESD event, including, a control circuit; a MEMS product, electrically connected with the control circuit; an ESD protection device, electrically connected with the control circuit, and electrically connected with the MEMS product in parallel; wherein, the ESD protection device comprises: a top electrode assembly electrically connected with the control circuit; a flexible beam comprising a first electrode layer electrically connected with the control circuit, a second electrode layer electrically connected with the MEMS product, and a moving metal contact electrically connected with the second electrode layer; a bottom electrode assembly having a bottom electrode layer electrically connected with the MEMS product and a fixed metal contact electrically connected with the bottom electrode layer and facing the moving metal contact.

The present invention provides a substrate that is highly resistant to ESD, on which a reverse sound hole type MEMS microphone can be mounted. The substrate has one surface connected to a MEMS microphone, and comprises a substrate sound hole that penetrates through the substrate and communicates with a sound hole of the MEMS microphone, and a GND pad disposed around the substrate sound hole on another surface of the substrate.

A pressure sensor device includes a semiconductor die having a die surface that includes a pressure sensitive area; and a bond wire bonded to a first peripheral region of the die surface and extends over the die surface to a second peripheral region of the die surface, wherein the pressure sensitive area is interposed between the second peripheral region and the first peripheral region, wherein the bond wire comprises a crossing portion that overlaps an area of the die surface, and wherein the crossing portion extends over the pressure sensitive area that is interposed between the first and the second peripheral regions.

A component (8) adapted to engage with a receiver (6) has an array of contact pads (16) to removeably connect with a corresponding array of connectors (18) on the receiver (6). Each contact pad (16) of the array is electrically connected to the electrode (26) of a corresponding recess or well (28) that is part of a sensor, wherein a membrane is formable across each recess. A conductive grid (102) is configured between the contact pads (16) of the array, to inhibit an electrostatic discharge (ESD) conducting across the recesses or wells and/or direct an ESD away from the recesses or wells.

A pressure sensor device includes a semiconductor die of the pressure sensor device and a bond wire of the pressure sensor device. A maximal vertical distance between a part of the bond wire and the semiconductor die is larger than a minimal vertical distance between the semiconductor die and a surface of a gel covering the semiconductor die.