A method for treating a solid layer includes: providing a multi-layer assembly having a carrier substrate and a solid layer bonded to the carrier substrate by a bonding layer, the solid layer having an exposed surface including a defined surface structure, the defined surface structure resulting from a removal, which is effected by a crack, from a donor substrate, at least in sections; processing the solid layer, which is arranged on the carrier substrate; and separating the solid layer from the carrier substrate by a destruction of the bonding layer.

The present disclosure provides a method for the surface modification of microstructured components having a polar surface, in particular for high-pressure applications. According to the method, a microstructured component is contacted, in particular treated, with a modification reagent, wherein the surface properties of the component are modified by chemical and/or physical interaction of the component surface and of the modification reagent.

A method of post-processing an actuator element is presented. The method begins by receiving a fabricated actuator element including a metallic layer contacting a substrate, sacrificial layer proximate the metallic layer, and a first dielectric layer on the sacrificial layer. The metallic layer has an end proximal to and contacting at least part of the substrate and a distal end extending over the first dielectric layer. A second dielectric is deposited on a portion of the metallic layer at the distal end. And, the sacrificial layer is removed.

A shadow mask having two or more levels of openings enables selective step coverage of micro-fabricated structures within a micro-optical bench device. The shadow mask includes a first opening within a top surface of the shadow mask and a second opening within the bottom surface of the shadow mask. The second opening is aligned with the first opening and has a second width less than a first width of the first opening. An overlap between the first opening and the second opening forms a hole within the shadow mask through which selective coating of micro-fabricated structures within the micro-optical bench device may occur.

A method for coating one or more channels of a sample using a vapor deposition includes alternatingly supplying at least two gaseous precursor to one or more channels defined in a sample through at least one feed line that is connected to a first channel end of the one or more channels. An adjustable pressure gradient is generated and conducts the at least two gaseous precursors along a first flow direction (SR1) from the at least one feed line to a first discharge line through the one or more channels. The at least two gaseous precursor and reaction products are discharged from the one or more channels through a first discharge line that is connected to a second channel end of the one or more channels of the sample. Non-reacted precursors and reaction products are discharged through a second discharge line that is connected to the first channel end.

Aspects include a method of manufacturing a flexible electronic structure that includes a metal or doped silicon substrate. Aspects include depositing an adhesive layer on the top side of the structure. Aspects also include depositing a release layer and a glass layer on the top side of the structure. Aspects also include reducing a thickness of the silicon substrate on the bottom side of the structure.

A microelectromechanical systems (MEMS) device may be provided with one or more sintered electrical contacts. The MEMS device may be a MEMS actuator or a MEMS sensor. The sintered electrical contacts may be silver-paste metalized electrical contacts. The sintered electrical contacts may be formed by depositing a sintering material such as a metal paste, a metal preform, a metal ink, or a metal powder on a wafer of released MEMS devices and heating the wafer so that the deposited sintering material diffuses into a substrate of the device, thereby making electrical contact with the device. The deposited sintering material may break through an insulating layer on the substrate during the sintering process. The MEMS device may be a multiple degree of freedom actuator having first and second MEMS actuators that facilitate autofocus, zoom, and optical image stabilization for a camera.

System and method for forming an ALD assembly on a surface of a microelectromechanical system (MEMS) device comprises a substrate having a surface and the ALD assembly is at least partially disposed on the surface of the substrate, wherein the ALD assembly is at least one of hydrophobic and hydrophilic properties. The ALD layer further includes a first ALD and a second ALD. On the surface of the substrate, the first ALD is deposited in a first deposition cycle and the second ALD is deposited in a second deposition cycle. The ALD assembly further comprises a seed layer formed using atomic layer deposition and the ALD layer is at least partially disposed on the seed layer. In one example, the seed layer is formed from alumina (Al.sub.2O.sub.3) and the ALD layer is formed from platinum (Pt). In alternate embodiment, on the seed layer, the first ALD is deposited in a first deposition cycle and the second ALD is deposited in a subsequent deposition cycle. The substrate is formed from silicon dioxide (SiO.sub.2).

An article having a surface treated to provide a protective coating structure in accordance with the following method: vapor depositing a first layer on a substrate, wherein said first layer is a metal oxide adhesion layer selected from the group consisting of an oxide of a Group IIIA metal element, a Group IVB metal element, a Group VB metal element, and combinations thereof; vapor depositing a second layer upon said first layer, wherein said second layer includes a silicon-containing layer selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; and vapor depositing a third layer upon said second layer, wherein said third layer is a functional organic-comprising layer, wherein said functional organic-comprising layer is a SAM.

A process for forming graphene, includes: depositing at least a first and a second metal onto a surface of silicon carbide (SiC), and heating the SiC and the first and second metals under conditions that cause the first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide. The corresponding solubilities of the carbon in the stable silicide and in the second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer on the SiC.