Described herein is a method of using a composition including 0.1 to 3% by weight ammonia and a C.sub.1 to C.sub.4 alkanol. The method includes using the composition for anti-pattern collapse treatment of a substrate including patterned material layers having line-space dimensions with a line width of 50 nm or less, aspect ratios of greater than or equal to 4, or a combination thereof.

The present disclosure includes apparatuses and methods related to freezing a sacrificial material in forming a semiconductor. In an example, a method may include solidifying, via freezing, a sacrificial material in an opening of a structure, wherein the sacrificial material has a freezing point below a boiling point of a solvent used in a wet clean operation and removing the sacrificial material via sublimation by exposing the sacrificial material to a particular temperature range.

Methods of removing native oxide layers and depositing dielectric layers having a controlled number of active sites on MEMS devices for biological applications are disclosed. In one aspect, a method includes removing a native oxide layer from a surface of the substrate by exposing the substrate to one or more ligands in vapor phase to volatize the native oxide layer and then thermally desorbing or otherwise etching the volatized native oxide layer. In another aspect, a method includes depositing a dielectric layer selected to provide a controlled number of active sites on the surface of the substrate. In yet another aspect, a method includes both removing a native oxide layer from a surface of the substrate by exposing the substrate to one or more ligands and depositing a dielectric layer selected to provide a controlled number of active sites on the surface of the substrate.

In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.

Embodiments of the disclosure provide methods of bonding silicon wafers. An exemplary method may include cleaning the silicon wafers to remove residues. The method may also include performing a hydrophilic treatment to surfaces of the silicon wafers to increase surface energy. The method may also include pre-bonding the silicon wafers at room temperature. In addition, the method may include performing a rapid thermal annealing treatment to the pre-bonded silicon wafers to bond the silicon wafers.

A method for locally removing/modifying a polymer material on a surface of a wafer. The method includes: a) aligning a mask with respect to the surface; b) locally exposing the surface through the mask using a VUV light source while simultaneously supplying a gas mixture containing at least oxygen; c) purging the surface with a gas mixture containing at least nitrogen and oxygen, the VUV light source being switched off; and d) repeating at least steps b) and c) until the removal/modification is complete. A device is described for locally removing/modifying a polymer material on a surface of a wafer, including a mask. The device includes an adjustable wafer table for holding the wafer, and is configured to set an exposure gap between the wafer and the mask in a first operating state, and to set a purge gap between the wafer and the mask in a second operating state.

In an example, a method may include removing a material from a structure to form an opening in the structure, exposing a residue, resulting from removing the material, to an alcohol gas to form a volatile compound, and removing the volatile compound by vaporization. The structure may be used in semiconductor devices, such as memory devices.

The present invention provides a MEMS microphone, having a base and a capacitive system provided on the base. The capacitive system includes a diaphragm and a back plate. The MEMS microphone is further provided with a supporting frame located between the back plate and the diaphragm. One end of the supporting frame is connected with the back plate, and the other end is connected with the diaphragm. The supporting frame divides the cavity into a first cavity body and a second cavity body. The supporting frame is provided with a connection channel. During the production process of the MEMS microphone, the etchant enters the first cavity body, and then enters the second cavity body, which prevents oxides from remaining in the microphone product and affecting the use of MEMS microphone.

In an example, a method may include removing a material from a structure to form an opening in the structure, exposing a residue, resulting from removing the material, to an alcohol gas to form a volatile compound, and removing the volatile compound by vaporization. The structure may be used in semiconductor devices, such as memory devices.

A method for fabricating a microfluidic device includes providing an assembly that includes a first silicon substrate having a hydrophilic silicon oxide top surface that includes a microfluidic channel and a second silicon substrate having a hydrophilic silicon oxide bottom surface directly bonded on the top surface of the first silicon substrate, the second silicon substrate including fluidic access holes giving fluidic access to the microfluidic channel. The method also includes exposing the assembly to oxidative species including one or more oxygen atoms and to heat so as to form silicon oxide at a surface of the access holes and of the microfluidic channel.