Patent classifications
B81C1/00865
SENSOR CHIP WITH A PLURALITY OF INTEGRATED SENSOR CIRCUITS
The present disclosure relates to a sensor chip, including a semiconductor substrate, a first sensor circuit monolithically integrated into the semiconductor substrate, at least one second sensor circuit monolithically integrated into the semiconductor substrate, wherein the first and second integrated sensor circuits are embodied identically.
LED transfer device and micro LED transferring method using the same
A micro light emitting diode (LED) transfer device includes a transfer part configured to transfer a plurality of LEDs arranged on a first substrate to a relay substrate; a memory configured to store characteristic information of each of the plurality of LEDs; and a processor configured to determine arrangement locations of each of the plurality of LEDs on the relay substrate based on the stored characteristic information, and control the transfer part to transfer the plurality of LEDs to the determined arrangement locations.
Manufacturing method for multiple MEMS sound transducers
A manufacturing method for multiple MEMS sound transducers includes manufacturing a reconstructed wafer, separating multiple chips from the wafer, and encapsulating the chips in a molding material. A piezoelectric element of the particular chips is exposed to become deflectable along a stroke axis. The reconstructed wafer is connected to multiple diaphragms associated with the particular chips, wherein the diaphragms are each connected to the associated piezoelectric element so that the diaphragms are each deflectable together with the at least one associated piezoelectric element along the stroke axis. MEMS sound transducers, each of which including at least one of the chips and one of the diaphragms, are isolated. A MEMS sound transducer, which has been manufactured using the aforementioned manufacturing method, is also disclosed.
MANUFACTURING METHOD FOR MULTIPLE MEMS SOUND TRANSDUCERS
A manufacturing method for multiple MEMS sound transducers includes manufacturing a reconstructed wafer, separating multiple chips from the wafer, and encapsulating the chips in a molding material. A piezoelectric element of the particular chips is exposed to become deflectable along a stroke axis. The reconstructed wafer is connected to multiple diaphragms associated with the particular chips, wherein the diaphragms are each connected to the associated piezoelectric element so that the diaphragms are each deflectable together with the at least one associated piezoelectric element along the stroke axis. MEMS sound transducers, each of which including at least one of the chips and one of the diaphragms, are isolated. A MEMS sound transducer, which has been manufactured using the aforementioned manufacturing method, is also disclosed.
LED TRANSFER DEVICE AND MICRO LED TRANSFERRING METHOD USING THE SAME
A micro light emitting diode (LED) transfer device includes a transfer part configured to transfer a plurality of LEDs arranged on a first substrate to a relay substrate; a memory configured to store characteristic information of each of the plurality of LEDs; and a processor configured to determine arrangement locations of each of the plurality of LEDs on the relay substrate based on the stored characteristic information, and control the transfer part to transfer the plurality of LEDs to the determined arrangement locations.
Method of strain gauge fabrication using a transfer substrate
A method of strain gauge fabrication is presented herein. The method includes: providing a first substrate having a cavity side; providing a second substrate having a semiconductor side; positioning the second substrate in relation to the first substrate such that the semiconductor side and the cavity side are contactable; processing the second substrate such that the first and second substrates are substantially joined via the semiconductor side and the cavity side; and etching the second substrate to define a strain gauge cantilevered over the cavity side of the first substrate.
METHOD AND SYSTEM OF STRAIN GAUGE FABRICATION
A method of strain gauge fabrication is presented herein. The method includes: providing a first substrate having a cavity side; providing a second substrate having a semiconductor side; positioning the second substrate in relation to the first substrate such that the semiconductor side and the cavity side are contactable; processing the second substrate such that the first and second substrates are substantially joined via the semiconductor side and the cavity side; and etching the second substrate to define a strain gauge cantilevered over the cavity side of the first substrate.
MEMS sensor with side port and method of fabricating same
A MEMS sensor package comprises a MEMS die that includes a substrate having a sensor formed thereon and a cap layer coupled to the substrate. The cap layer has a cavity overlying a substrate region at which the sensor resides. A port extends between the cavity and a side wall of the MEMS die and enables admittance of fluid into the cavity. Fabrication methodology entails providing a substrate structure having sensors formed thereon, providing a cap layer structure having inwardly extending cavities, and forming a channel between pairs of the cavities. The cap layer structure is coupled with the substrate structure and each channel is interposed between a pair of cavities. A singulation process produces a pair of sensor packages, each having a port formed by splitting the channel, where the port is exposed during singulation and extends between its respective cavity and side wall of the sensor package.
MEMS SENSOR WITH SIDE PORT AND METHOD OF FABRICATING SAME
A MEMS sensor package comprises a MEMS die that includes a substrate having a sensor formed thereon and a cap layer coupled to the substrate. The cap layer has a cavity overlying a substrate region at which the sensor resides. A port extends between the cavity and a side wall of the MEMS die and enables admittance of fluid into the cavity. Fabrication methodology entails providing a substrate structure having sensors formed thereon, providing a cap layer structure having inwardly extending cavities, and forming a channel between pairs of the cavities. The cap layer structure is coupled with the substrate structure and each channel is interposed between a pair of cavities. A singulation process produces a pair of sensor packages, each having a port formed by splitting the channel, where the port is exposed during singulation and extends between its respective cavity and side wall of the sensor package.
MEMS SENSOR WITH SIDE PORT AND METHOD OF FABRICATING SAME
A MEMS sensor package comprises a MEMS die that includes a substrate having a sensor formed thereon and a cap layer coupled to the substrate. The cap layer has a cavity overlying a substrate region at which the sensor resides. A port extends between the cavity and a side wall of the MEMS die and enables admittance of fluid into the cavity. Fabrication methodology entails providing a substrate structure having sensors formed thereon, providing a cap layer structure having inwardly extending cavities, and forming a channel between pairs of the cavities. The cap layer structure is coupled with the substrate structure and each channel is interposed between a pair of cavities. A singulation process produces a pair of sensor packages, each having a port formed by splitting the channel, where the port is exposed during singulation and extends between its respective cavity and side wall of the sensor package.