A method of manufacturing a physical quantity detection sensor includes forming a stacked structure having a plurality of sensor devices by bonding together a sensor substrate and a different type substrate of a different material from a material of the sensor substrate, the sensor substrate having a plurality of sensor movable portions therein, and dicing the stacked structure using a dicing blade, wherein a groove is provided in one of the sensor substrate and the different type substrate to penetrate the one of the sensor substrate and the different type substrate, the groove having a width larger than a width of the dicing blade, and in at least part of the dicing, the dicing blade is accommodated in the groove and advances without contacting surfaces on left and right sides of the groove.

The present disclosure relates to a sensor chip, including a semiconductor substrate, a first sensor circuit monolithically integrated into the semiconductor substrate, at least one second sensor circuit monolithically integrated into the semiconductor substrate, wherein the first and second integrated sensor circuits are embodied identically.

A device chip manufacturing method includes attaching a wafer to the first surface of a semiconductor ingot, separating the semiconductor ingot into a subject part and a remaining part after attachment, the subject part being attached to the wafer to form a laminated wafer having a front side as an exposed surface of the subject part and a back side as an exposed surface of the wafer, setting a plurality of crossing division lines on the front side of the laminated wafer to thereby define a plurality of separate regions after separation, and next forming a plurality of devices in the respective separate regions, and then dividing the laminated wafer along the division lines after forming the devices, thereby forming the plural device chips including the respective devices.

An MEMS device includes a package (1), a bottom plate (2), and a first inertial component (3). The first inertial component (3) is located in packaging space (4) formed by the bottom plate (2) and the package (1). There is a first alignment part (21) on a surface that is of the bottom plate (2) and that faces the packaging space (4), and the first inertial component (3) has a first mounting part (31). A shape of the first mounting part (31) matches a shape of the first alignment part (21). The MEMS device is equipped with a mounting alignment reference, the first mounting part (31) is connected to the first alignment part (21), and the first inertial component is mounted on the bottom plate at a preset angle. In addition, a bottom part of the first inertial component is not directly connected to the bottom plate.

A method of forming semiconductor devices, such as capacitive type MEMS acoustic transducers, in a semiconductor includes forming a mask layer on a back surface of the semiconductor wafer and removing first etch portions of the mask layer and scribe trench portions of the mask layer. Each scribe trench portion is positioned in the mask layer to define a corresponding scribe boundary of a plurality of the semiconductor devices being formed in the semiconductor wafer. Etching the semiconductor wafer through the first etch portions and the scribe trench portions may be done simultaneously to form external back chambers and scribe trenches, respectively, in the semiconductor wafer. The semiconductor wafer is then cut along cutting lines in the scribe trenches to singulate individual MEMS acoustic transducers. The etching through the first and second etch portions and the scribe trench portions are dry etching of the semiconductor substrate in one embodiment.

The present invention is notably directed to methods of fabrication of a microfluidic chip package or assembly (1), comprising: providing (S1) a substrate (10, 30) having at least one block (14, 14a) comprising one or more microfluidic structures on a face (F) of the substrate; partially cutting (S2) into the substrate to obtain partial cuts (10c), such that a residual thickness of the substrate at the level of the partial cuts (10c) enables singulation of said at least one block (14, 14a); cleaning (S4) said at least one block; and applying (S5-S7) a cover-film (62) to cover said at least one block (14, 14a), whereby at least one covered block is obtained, the applied cover film still enabling singulation of each covered block, wherein each covered block corresponds to a microfluidic chip after singulation. The present invention is further directed to microfluidic chips, packing or assembly, obtainable with such methods.

A semiconductor device structure is provided. The semiconductor device structure includes a first wafer comprising a first face and a second face opposite the first face and having a plurality of predetermined die areas. A plurality of recesses are disposed in the first face of the first wafer. A first recess of the plurality of recesses extends in a direction substantially parallel to a first edge of at least one of the plurality of predetermined die areas and laterally surrounds the at least one of the plurality of predetermined die areas. A second wafer is bonded to the second face of the first wafer.

Disclosed a MEMS assembly and a manufacturing method thereof. The manufacturing method comprises: forming a groove on a sensor chip; forming a bonding pad on a circuit chip; bonding the sensor chip and the circuit chip together to form a bonding assembly; performing a first dicing process at a first position of the sensor chip to penetrate through the sensor chip to the groove; performing a second dicing process at a second position of the sensor chip to penetrate through the sensor chip and the circuit chip, for obtaining an individual MEMS assembly by singulating the bonding assembly, wherein location of the groove corresponds to a position of the bonding pad, and an opening is formed in the sensor chip to expose the bonding pad when the second dicing process is performed. The method uses two dicing process respectively achieving different depths to expose the bonding pad of the sensor chip and singulate the MEMS assembly, respectively, to improve yield and reliability.

A semiconductor device structure is provided. The semiconductor device structure includes a first substrate including a first face and a second face opposite the first face. A second substrate is bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate. One or more recesses are arranged in the second face of the first substrate and are configured to compensate for thermal expansion or thermal contraction.

A semiconductor device structure is provided. The semiconductor device structure includes a first substrate including a first face and a second face opposite the first face. A second substrate is bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate. One or more recesses are arranged in the second face of the first substrate and are configured to compensate for thermal expansion or thermal contraction.