According to an example aspect of the present invention, there is provided a wafer level package for a device, the package comprising: a first substrate and a second substrate, a sealing structure comprising a seal ring and a bonding layer between the first substrate and the second substrate, and a lateral electrical connection line on a surface of the first substrate, which lateral electrical connection line extends through the seal ring for creating an electrical connection between the device inside the package and an electrical circuit outside the package.

A device includes a substrate comprising a first standoff, a second standoff, a third standoff, a first cavity, a second cavity, and a bonding material covering a portion of the first, the second, and the third standoff. The first cavity is positioned between the first and the second standoffs, and the second cavity is positioned between the second and the third standoffs. The first cavity comprises a first cavity region and a second cavity region separated by a portion of the substrate extruding thereto, and wherein a depth associated with the first cavity region is greater than a depth associated with the second cavity. A surface of the first cavity is covered with a getter material.

A semiconductor device and method of manufacturing the device that includes a growth die and a dummy die. The method includes patterning, on an integrated circuit wafer, at one least growth die, and patterning at least one dummy die that is positioned on at least a portion of a circumference of the integrated circuit wafer. The patterned growth and dummy dies are etched on the wafer. A bond wave is initiated at a starting point on the integrated circuit wafer. The starting point is positioned on an edge of the integrated circuit wafer opposite the portion on which the at least one dummy die is patterned. Upon application of pressure at the starting point, a uniform bond wave propagates across the wafers, bonding the two wafers together.

A three dimensional (3D) micro-electro-mechanical system (MEMS) device is provided. The device comprises a central MEMS wafer, and top and bottom cap wafers. The MEMS wafer includes a MEMS structure, such as an inertial sensor. The 5 top cap wafer, the bottom cap wafer and the MEMS wafers are stacked along a stacking axis and together form at least one hermetic cavity enclosing the MEMS structure. At least one of the top cap wafer and the bottom cap wafer is a silicon-on- insulator (SOI) cap wafer comprising a cap device layer, a cap handle layer and a cap insulating layer interposed between the cap device layer and the cap handle layer. At 10 least one electrically conductive path extends through the SOI cap wafer, establishing an electrical convection between an outer electrical contact provided on the SOI cap wafer and the MEMS structure.

Micro-electromechanical (MEMS) devices and methods of forming are provided. The MEMS device includes a first substrate including a first conductive feature, a first movable element positioned over the first conductive feature, a second conductive feature, and a second movable element positioned over the second conductive feature. The MEMS device also includes a cap bonded to the first substrate, where the cap and the first substrate define a first sealed cavity and a second sealed cavity. The first conductive feature and the first movable element are disposed in the first sealed cavity and the second conductive feature and the second movable element are disposed in the second sealed cavity. A pressure of the second cavity is higher than a pressure of the first sealed cavity, and an out gas layer is disposed in a recess of the cap that partially defines the second sealed cavity.

A MEMS component having increased integration density and a method for manufacturing such a component are specified. The component comprises a base wafer and a cover wafer arranged over this. A first cavity is arranged between the base wafer and the cover wafer. A second cavity is arranged over the cover wafer, below a thin-layer covering. The cavities contain component structures.

A wireless circuit includes a housing having at least one opening, and sensor connected to the housing at the opening. The sensor includes a first layer having a first dimension and a second layer having a second dimension shorter than the first dimension. The second layer may be positioned entirely within the housing and a surface of said first layer may be exposed to an exterior of the housing.

A method for manufacturing a microelectromechanical systems microphone comprises depositing a membrane on a first sacrificial layer on a substrate, releasing the membrane by removing the first sacrificial layer, depositing a resist layer on the membrane, and patterning the resist layer to expose the membrane, such that at least one section of resist layer remains at at least one edge of the membrane to form an anchor. A microphone manufactured by this method is also provided. There is also provided a method for manufacturing a microelectromechanical systems microphone comprising depositing a membrane on a first sacrificial layer deposited on a substrate, releasing the membrane by removing at least the first sacrificial layer, depositing a resist layer on membrane, patterning the resist layer to expose an edge of the membrane, and forming an anchor at the exposed edge of the membrane. A microphone manufactured by this method is also provided.

The present disclosure provides a packaging method, including: providing a first semiconductor substrate; forming a bonding region on the first semiconductor substrate, wherein the bonding region of the first semiconductor substrate includes a first bonding metal layer and a second bonding metal layer; providing a second semiconductor substrate having a bonding region, wherein the bonding region of the second semiconductor substrate includes a third bonding layer; and bonding the first semiconductor substrate to the second semiconductor substrate by bringing the bonding region of the first semiconductor substrate in contact with the bonding region of the second semiconductor substrate; wherein the first and third bonding metal layers include copper (Cu), and the second bonding metal layer includes Tin (Sn). An associated packaging structure is also disclosed.

A method for manufacturing a microelectromechanical systems (MEMS) microphone comprises depositing a membrane on a first sacrificial layer, wherein the first sacrificial layer is deposited on a substrate, etching the substrate to define a cavity, releasing the membrane by removing at least the first sacrificial layer, and forming at least one anchor at the edge of the membrane.