A method of manufacturing a semiconductive structure includes receiving a first substrate; disposing an interconnection layer on the first substrate; forming a plurality of conductors over the interconnection layer; filing gaps between the plurality of conductors with a film; forming a barrier layer over the film; removing the barrier layer; and partially removing the film to expose a portion of the interconnection and leave a portion of the interconnection layer covered by the film.

There is provided a method of making a fluidic system that comprises assembling a fluidic system comprising a first plate, a second plate and a membrane disposed between the first plate and the second plate; applying laser energy to the fluidic system to cause the first plate, the second plate and the membrane to melt at bonding areas; and allowing the bonding areas to cool down such that the first plate, the second plate and the membrane are bonded together.

Disclosed is method of manufacturing a microchannel chip by joining together a resin channel substrate having microchannels formed on at least one side thereof and a resin lid substrate, the method including: a step (A) wherein surface modification treatment is applied on joining surfaces of the channel substrate and the lid substrate; and a step (B) wherein, after the step (A), the joining surfaces of the channel substrate and the lid substrate are mated and the channel substrate and the lid substrate are pressurized under heating via a fluid or an elastic body having a durometer hardness of E20 or less.

The present disclosure relates to a micro-electromechanical system (MEMS) structure including one or more semiconductor devices arranged on or within a first substrate and a MEMS substrate having an ambulatory element. The MEMS substrate is connected to the first substrate by a conductive bonding structure. A capping substrate is arranged on the MEMs substrate. The capping substrate includes a semiconductor material that is separated from the first substrate by the MEMS substrate. One or more conductive polysilicon vias include a polysilicon material that continuously extends from the conductive bonding structure, completely through the MEMS substrate, and to within the capping substrate. The semiconductor material of the capping substrate covers opposing sidewalls of the polysilicon material and an upper surface of the polysilicon material that is between the opposing sidewalls.

The present invention relates to a process and apparatus for the preparation of a bonded substrate. More particularly, the present invention relates to a PDMS bonding apparatus. More specifically, the present invention relates to a PDMS bonding apparatus which uses plasma to bond PDMS to a substrate.

The present invention discloses a PDMS bonding apparatus and process for using said apparatus, the apparatus comprising: a process chamber (100) forming a sealed processing space (S) for bonding of PDMS (polydimethylsiloxane); a first support (200) installed in the process chamber (100) and which supports the PDMS (1); a second support (300) installed in the process chamber (100) opposing the first support (200) and which supports a bonding object (2) which is bonded to the PDMS (1); a gas injection unit (400) which ejects process gas between the first support (200) and the second support (300), and; a plasma generator (500) which creates a plasma atmosphere within the process chamber (100).

A hermetically sealed package includes: at least one cover substrate which is sheet-like and includes a flat outer surface and a circumferential narrow side, the at least one cover substrate being formed as a transparent thin film substrate, the at least one cover substrate having a thickness of less than 200 μm; a second substrate which is adjoined to the at least one cover substrate and in direct contact with the at least one cover substrate; at least one functional area enclosed by the hermetically sealed package, the at least one functional area being between the at least one cover substrate and the second substrate; and a laser bonding line which joins the at least one cover substrate and the second substrate directly and in a hermetically tight manner.

A method of bonding layers of dielectric materials includes providing a surface one of the layers with microscale- and/or nanoscale-size bonding elements forming contact points of the layers and bringing a layer of the layers into a mutual position according to an intended use. The method also includes illuminating the layer whose surface is provided with bonding elements by an incident electromagnetic wave, the propagation direction of which is substantially orthogonal to the one of the layers, and whose wavelength is selected depending on an absorption spectrum of a material forming the one of the layers and generating condensed optical beams within said bonding elements or close to a tip of said bonding elements intended to be in contact with the other layer. The method further includes heating and melting the bonding elements by high-intensity focal spots formed by said generated optical beams and maintaining the layers into a mutual position until and bonding of the layers.

A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.

A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.

A hermetic package includes a base body, wherein dielectric material of a bottom of the base body is made of an organic material, an optical component mounted on the base body, and inorganic material hermetically enclosing the optical component along all surrounding sides.