A method for bonding two substrates is described, comprising providing a first and a second silicon substrate, providing a raised feature on at least one of the first and the second silicon substrate, forming a layer of gold on the first and the second silicon substrates, and pressing the first substrate against the second substrate, to form a thermocompression bond around the raised feature. The high initial pressure caused by the raised feature on the opposing surface provides for a hermetic bond without fracture of the raised feature, while the complete embedding of the raised feature into the opposing surface allows for the two bonding planes to come into contact. This large contact area provides for high strength.

A method for encapsulating a microelectronic device, arranged on a support substrate, with an encapsulation cover includes, inter alia, the following sequence of steps: a) providing a support substrate on which a microelectronic device is arranged, b) depositing a bonding layer on the first face of the substrate, around the microelectronic device, c) positioning an encapsulation cover on the bonding layer in such a way as to encapsulate the microelectronic device, d) thinning the second main face of the support substrate and the second main face of the encapsulation cover by chemical etching.

A patterned thermoplastic elastomer (TPE) film for fabricating a liquid-filled blister, has a blister-sized cavity in fluid communication with a microfluidic channel via a gating region. The gating region is defined by a relief pattern that has at least one of the following: at least 5 separate compartments defined by respective recesses in the first side, each of the recesses bounded by walls that separate the compartments from each other, the recess, or the channel; at least 5 walls defined by the patterning of the first side, the walls separating a plurality of compartments from each other, the recess, or the channel, wherein the walls have a mean thickness that is less than a mean height, and each pair of walls has a mean separation greater than twice the mean thickness; an array of separate compartments bounded by walls defined by the patterning of the first side that collectively define a polygonal regular planar tiling with at least 50% of the surface area of the gating region being open spaces; and a focusing region in fluid communication with the cavity, and a seal region having at least one wall defined by patterning of the film, wherein the at least one wall separates the focusing region from the seal region, and a shape of the at least one wall tapers the focusing region towards the seal region.

A packaged electronic die having a micro-cavity and a method for forming a packaged electronic die. The packaged electronic die includes a photoresist frame secured to the electronic die and extending completely around the device. The photoresist frame is further secured to a first major surface of a substrate so as to form an enclosure around the device. Encapsulant material extends over the electronic die and around the sides of the electronic die. The encapsulant material is in contact with the first major surface of the substrate around the entire periphery of the electronic die so as to form a seal around the electronic die.

A method for fusion bonding a pair of substrates together with silane preconditioning is provided. A surface of a first oxide layer or a surface of a second oxide layer is preconditioned with silane. The first and second oxide layers are respectively arranged on first and second semiconductor substrates. Water is applied to the surface of the first or second oxide layer. The surfaces of the first and second oxide layers are brought in direct contact. The first and second oxide layers are annealed. A method for manufacturing a microelectromechanical systems (MEMS) package using the fusion bonding is also provided.

A resonance device that includes a MEMS substrate including a resonator, an upper lid that seals a vibration space of the resonator, and a ground portion positioned between the MEMS substrate and the upper lid, the ground portion being extended to an inside of the upper lid and electrically connected to the upper lid.

A wafer-level package for micro-acoustic devices and a method of manufacture is provided. The package comprises a base wafer with electric device structures. A frame structure is sitting on top of the base wafer enclosing particular device areas for the micro-acoustic devices. A cap wafer provided with a thin polymer coating is bonded to the frame structure to form a closed cavity over each device area and to enclose within the cavity the device structures arranged on the respective device area.

The present disclosure describes techniques for altering the epoxy wettability of a surface of a MEMS device. Particularly applicable to flip-chip bonding arrangements in which a top surface of a MEMS device is adhered to a package substrate. A barrier region is provided on a top surface of the MEMs device, laterally outside a region which forms, or overlies, the backplate and/or the cavity in the transducer substrate. The barrier region comprises a plurality of discontinuities, e.g. dimples, which inhibit the flow of epoxy.

In an embodiment a sensor arrangement includes a substrate, at least one spacer arranged directly onto a surface of the substrate, wherein the spacer comprises a soft material and a sensor chip attached to the substrate by an adhesive, wherein both the at least one spacer and the adhesive are arranged at least partly between the sensor chip and the substrate, and wherein the spacer is adapted and arranged to define a bond line thickness of the adhesive.

A method of processing a double sided wafer of a microelectromechanical device includes spinning a resist onto a first side of a first wafer. The method further includes forming pathways within the resist to expose portions of the first side of the first wafer. The method also includes etching one or more depressions in the first side of the first wafer through the pathways, where each of the depressions have a planar surface and edges. Furthermore, the method includes depositing one or more adhesion metals over the resist such that the one or more adhesion metals are deposited within the depressions, and then removing the resist from the first wafer. The method finally includes depositing indium onto the adhesion metals deposited within the depressions and bonding a second wafer to the first wafer by compressing the indium between the second wafer and the first wafer.