Patent classifications
B81C2203/0721
MONOLITHIC POST COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR INTEGRATION OF THERMOELECTRIC-BASED INFRARED DETECTOR
A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device monolithically after CMOS processing. For example, the MEMS sensors are formed over a BEOL dielectric of a CMOS device. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region.
HETEROGENOUS INTEGRATION OF COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR AND MEMS SENSORS
A complementary metal oxide semiconductor (CMOS) device integrated with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device heterogeneously. For example, a CMOS wafer with CMOS devices and interconnections as well as partially processed MEMS modules is bonded with a MEMS wafer with MEMS structures, post CMOS compatibility issues are alleviated. Post integration process to complete the devices includes forming contacts for interconnecting the sensors to the CMOS components as well as encapsulating the devices with a cap wafer using wafer-level vacuum packaging.
Heterogenous integration of complementary metal-oxide-semiconductor and MEMS sensors
A complementary metal oxide semiconductor (CMOS) device integrated with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device heterogeneously. For example, a CMOS wafer with CMOS devices and interconnections as well as partially processed MEMS modules is bonded with a MEMS wafer with MEMS structures, post CMOS compatibility issues are alleviated. Post integration process to complete the devices includes forming contacts for interconnecting the sensors to the CMOS components as well as encapsulating the devices with a cap wafer using wafer-level vacuum packaging.
Display device, method of manufacturing the same, display method, and wearable device
The present disclosure discloses a display device, a method of manufacturing the same, a display method, and a wearable device. The display includes a first base substrate; a low-temperature polysilicon (LTPS) back plate formed on the first base substrate and provided with a switch control circuit; and a micro-electro-mechanical system (MEMS) microlens array formed at a non-display region of the first base substrate, wherein the MEMS microlens array is configured to reflect light emitted by a light-emitting structure at the display region, and the switch control circuit is configured to control the MEMS microlens array to be turned on and off; and the light-emitting structure formed at the display region of the first base substrate.
Monolithic post complementary metal-oxide-semiconductor integration of thermoelectric-based infrared detector
A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device monolithically after CMOS processing. For example, the MEMS sensors are formed over a BEOL dielectric of a CMOS device. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region.
Sensor device and method for making thereof
A sensor device may include an electronic device that has at least one integrated circuit device and a MEMS sensor that are each monolithically integrated with a semiconductor substrate. The sensor device may include a suspension structure that suspends the MEMS sensor over a back cavity within the semiconductor substrate. The suspension structure may be springs or a spring structure formed from etching the front side of the substrate.
Sensor device and method for making thereof
A sensor device may include an electronic device that has at least one integrated circuit device and a MEMS sensor that are each monolithically integrated with a semiconductor substrate. The sensor device may include a suspension structure that suspends the MEMS sensor over a back cavity within the semiconductor substrate. The suspension structure may be springs or a spring structure formed from etching the front side of the substrate.
DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, DISPLAY METHOD, AND WEARABLE DEVICE
The present disclosure discloses a display device, a method of manufacturing the same, a display method, and a wearable device. The display includes a first base substrate; a low-temperature polysilicon (LTPS) back plate formed on the first base substrate and provided with a switch control circuit; and a micro-electro-mechanical system (MEMS) microlens array formed at a non-display region of the first base substrate, wherein the MEMS microlens array is configured to reflect light emitted by a light-emitting structure at the display region, and the switch control circuit is configured to control the MEMS microlens array to be turned on and off; and the light-emitting structure formed at the display region of the first base substrate.