An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.

Various embodiments of the present disclosure are directed towards a method for manufacturing an integrated chip, the method comprises forming an interconnect structure over a semiconductor substrate. An upper dielectric layer is formed over the interconnect structure. An outgas layer is formed within the upper dielectric layer. The outgas layer comprises a first material that is amorphous. A microelectromechanical systems (MEMS) substrate is formed over the interconnect structure. The MEMS substrate comprises a moveable structure directly over the outgas layer.

An integrated structure of a MEMS microphone and an air pressure sensor, and a fabrication method for the integrated structure, the structure including a base substrate; a vibrating membrane, back electrode, upper electrode, and lower electrode formed on the base substrate, as well as a sacrificial layer formed between the vibrating membrane and the back electrode and between the upper electrode and the lower electrode; a first integrated circuit electrically connected to the vibrating membrane and the back electrode respectively; and a second integrated circuit electrically connected to the lower electrode and the upper electrode respectively, wherein a region of the base substrate corresponding to the vibrating membrane is provided with a back cavity; the sacrificial layer between the vibrating membrane and the back electrode is hollowed out to from a vibrating space that communicates with the exterior of the integrated structure, and the sacrificial layer between the upper electrode and the lower electrode is hollowed out to form a closed space; and the integrated circuits are formed on a chip, thereby reducing the interference of connection lines on the performance of a microphone, reducing the introduction of noise, reducing the size of a product and reducing power consumption.

Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes an interconnect structure disposed over a semiconductor substrate. A dielectric structure is disposed over the interconnect structure. A plurality of cavities are disposed in the dielectric structure. A microelectromechanical system (MEMS) substrate is disposed over the dielectric structure, where the MEMS substrate comprises a plurality of movable membranes, and where the movable membranes overlie the cavities, respectively. A plurality of fluid communication channels are disposed in the dielectric structure, where each of the fluid communication channels extend laterally between two neighboring cavities of the cavities, such that each of the cavities are in fluid communication with one another.

A MEMS device, comprising a plurality of stacked layers, includes a plurality of solder couplings that mechanically fasten and electrically couple the MEMS device to an external component. The plurality of solder couplings is connected atop a portion of an upper surface that extends past an edge surface of a MEMS layer to form a shelf and are electrically connected via the shelf to receive signals generated by the MEMS device. These signals are provided to the external component via the solder couplings.

Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes an interconnect structure disposed over a semiconductor substrate. A dielectric structure is disposed over the interconnect structure. A plurality of cavities are disposed in the dielectric structure. A microelectromechanical system (MEMS) substrate is disposed over the dielectric structure, where the MEMS substrate comprises a plurality of movable membranes, and where the movable membranes overlie the cavities, respectively. A plurality of fluid communication channels are disposed in the dielectric structure, where each of the fluid communication channels extend laterally between two neighboring cavities of the cavities, such that each of the cavities are in fluid communication with one another.

A method of forming an ultrasonic transducer device includes forming an insulating layer having topographic features over a lower transducer electrode layer of a substrate; forming a conformal, anti-stiction layer over the insulating layer such that the conformal layer also has the topographic features; defining a cavity in a support layer formed over the anti-stiction layer; and bonding a membrane to the support layer.

A ultrasonic transducer device includes a transducer bottom electrode layer disposed over a substrate, and a plurality of vias that electrically connect the bottom electrode layer with the substrate, wherein substantially an entirety of the plurality of vias are disposed directly below a footprint of a transducer cavity. Alternatively, the transducer bottom electrode layer includes a first metal layer in contact with the plurality of vias and a second metal layer formed on the first metal layer, the first metal layer including a same material as the plurality of vias.

A method is provided that includes forming a first metal layer of a seal structure over a micro-electromechanical system (MEMS) structure and over a channel formed through the MEMS structure to an integrated circuit of a semiconductor structure. The first metal layer is formed at a first temperature. The method includes forming a second metal layer over the first metal layer. The second metal layer is formed at a second temperature less than the first temperature. The method includes performing a first cooling process to cool the semiconductor structure.

A die for a semiconductor chip package includes a first surface including an integrated circuit formed therein. The die also includes a backside surface opposite the first surface. The backside surface has a total surface area defining a substantially planar region of the backside surface. The die further includes at least one device formed on the backside surface. The at least one device includes at least one extension extending from the at least one device beyond the total surface area.