Embodiments provide a method for acoustically testing at least one MEMS device of a plurality of MEMS devices. The method comprises a step of providing at least one MEMS device. Additionally, the method comprises a step of exciting the at least one MEMS device to an acoustic vibration. Additionally, the method comprises a step of detecting the acoustic vibration of the at least one MEMS device by at least one sound sensor. Additionally, the method comprises a step of evaluating the acoustic vibration of the at least one MEMS device detected by the at least one sound sensor to test the at least one MEMS device as to an intended functionality.

A micromechanical device that includes a MEMS substrate and a cap substrate that enclose at least one first cavity, with at least one contact pad that is situated outside the first cavity. A MEMS structure is situated in the first cavity and connected to the contact pad with the aid of a strip conductor, the strip conductor extending at least partially in the MEMS substrate. The contact pad is situated at a surface of the cap substrate.

A method of forming an ultrasonic transducer device includes forming and patterning a film stack over a substrate, the film stack comprising a metal electrode layer and a chemical mechanical polishing (CMP) stop layer formed over the metal electrode layer; forming an insulation layer over the patterned film stack; planarizing the insulation layer to the CMP stop layer; measuring a remaining thickness of the CMP stop layer; and forming a membrane support layer over the patterned film stack, wherein the membrane support layer is formed at thickness dependent upon the measured remaining thickness of the CMP stop layer, such that a combined thickness of the CMP stop layer and the membrane support layer corresponds to a desired transducer cavity depth.

A centrifuge screening system and method of testing MEMS devices using the system. The wafer level centrifuge screening system can include a base centrifuge system and a cassette mounting hub coupled to the base centrifuge system. The method can include applying a smooth and continuous acceleration profile to one or more MEMS components via the base centrifuge system. Each of the one or more MEMS components can have one or more MEMS devices formed thereon. The one or more MEMS components can be provided in one or more cassettes configured on the cassette mounting hub. The method can also include identifying one or more target MEMS components, which can include identifying stiction in one or more MEMS devices on the one or more MEMS components.

A microelectromechanical system (MEMS) test structure includes a plurality of capacitors formed from sense electrodes and capacitive plates having a predetermined geometry and size associated with a related MEMS device such as a MEMS sensor. Based on the predetermined relationships between the capacitors of the test structure, and between the test structure and the MEMS devices, an effect of fringing fields on the sensed capacitances of the MEMS devices may be eliminated, and the capacitive gap of the MEMS device may be accurately measured.

The present invention relates to a method and device capable to form a nanomaterial structure (13) on a receiver (14) by transfer of nanomaterial from a donor film. In some embodiment, the transfer can be provided by laser induced forward transfer, more preferably by blister based laser induced forward transfer. The method further comprises a simultaneous scanning of the donor film (12) or the receiver (14) so that, a computer driven means for moving the receiver (14) and the donor film (12) can form high precision nanomaterial structure (13). In a preferred embodiment, the simultaneous scanning can be provided by an imaging laser generating high harmonic waves which are detected by a detector. In yet another embodiment, the receiver (14) and/or donor film (12) can be further scanned by a broadband light source(s). In a preferred embodiment, imaging laser and/or light source(s) are emitting polarized light to determine orientation of the nanoparticle deposited on the receiver (14) and forming the nanomaterial structure (13).

An ultrasonic transducer device includes a patterned film stack disposed on first regions of a substrate, the patterned film stack including a metal electrode layer and a bottom cavity layer formed on the metal electrode layer. The ultrasonic transducer device further includes a planarized insulation layer disposed on second regions of the substrate layer, a cavity formed in a membrane support layer and a CMP stop layer, the CMP stop layer including a top layer of the patterned film stack and the membrane support layer formed over the patterned film stack and the planarized insulation layer. The ultrasonic transducer device also includes a membrane bonded to the membrane support layer. The CMP stop layer underlies portions of the membrane support layer but not the cavity.

A wafer includes a process control monitor (PCM) structure formed on a substrate. The PCM structure includes detection and reference structures. The detection structure includes a first electrically conductive line arrangement formed in a first structural layer on the substrate and a first protection layer surrounding the first electrically conductive line arrangement. The reference structure includes a second electrically conductive line arrangement formed in the first structural layer on the substrate, a second protection layer surrounding the second electrically conductive line arrangement, an insulator material formed overlying the second electrically conductive line arrangement and the second protection layer, and a second structural layer overlying the insulator material. The insulator material does not overlie the detection structure. Methodology entails measuring a capacitance between the detection structure and the substrate, measuring another capacitance between the reference structure and substrate, and comparing the two capacitances to determine whether defects exist.

Provided is a semi-finished product of an electronic device, including a substrate, a sensing module, and a lid. The substrate has a first surface and a second surface opposite to each other. The sensing module is disposed on the first surface. The lid is disposed on the first surface and forms a first cavity together with the substrate. An electronic device is also provided.

A sensor system includes first and second MEMS structures and a processing circuit. The first and second MEMS structures are configured to produce first and second output signals, respectively, in response to a physical stimulus. A method performed by the processing circuit entails receiving the first and second output signals and detecting a defective one of the first and second MEMS structures from the first and second output signals by determining that the first and second output signals are uncorrelated to one another. The method further entails utilizing only the first or the second output signal from a non-defective one of the MEMS structures to produce a processed output signal when one of the MEMS structures is determined to be defective and utilizing the first and second output signals from both of the MEMS structures to produce the processed output signal when neither of the MEMS structures is defective.