A heat generating device includes: a sealed container; a tubular body provided in a hollow portion of the sealed container; a heat generating element provided on an outer surface of the tubular body and configured to generate heat by occluding and discharging hydrogen supplied to the hollow portion; and a flow path formed by an inner surface of the tubular body and through which configured to allow a fluid that exchanges heat with the heat generating element to flow. The heat generating element includes a base made of a hydrogen storage metal, and a multilayer film provided on the base. The multilayer film has a first layer made of a hydrogen storage metal and having a thickness of less than 1000 nm, and a second layer made of a hydrogen storage metal, which is different from that of the first layer, and having a thickness of less than 1000 nm.

The present disclosure relates to improved processes for the preparation of metal hydrides. The present disclosure also relates to metal hydrides, e.g., metal hydrides prepared by the processes described herein, that exhibit enhanced hydrogen storage capacity when used as hydrogen storage systems.

A hydrogen storage assembly includes at least one wafer formed of a substrate material that produces metal hydride when exposed to a hydrogen-rich carrier fluid. The wafer can be supported by a housing and arranged so that the hydrogen-rich carrier fluid can flow over a reaction surface of the wafer. At least one heating element can be arranged to transfer heat to the wafer to attain an operating temperature suitable for hydrogen charging on the reaction surface. A de-activation material may be provided on the reaction surface for inhibiting formation of surface oxide that impedes hydrogen absorption during charging and hydrogen desorption during discharging. The at least one wafer can include a plurality of monolithic plate wafers spaced apart about a central axis of the assembly. The at least one wafer can include a plurality of monolithic disc wafers in at least one stacked arrangement.

A method for synthesis of MgH.sub.2/Ni nanocomposites includes balancing magnesium (Mg) powder in a ball milling container with helium (He) gas atmosphere; adding a plurality of nickel (Ni) milling balls to the container; introducing hydrogen (H.sub.2) gas to the container to form a MgH.sub.2 powder; milling the MgH.sub.2 powder using the Ni-balls as milling media to provide MgH.sub.2/Ni nanocomposites. The milling can be high-energy ball milling, e.g., under 50 bar of hydrogen gas atmosphere. The high-energy ball milling can be reactive ball milling (RBM). The method can be used to attach Ni to MgH.sub.2 powders to enhance the kinetics of hydrogenation/dehydrogenation of MgH.sub.2.

The present disclosure relates to improved processes for the preparation of metal hydrides. The present disclosure also relates to metal hydrides, e.g., metal hydrides prepared by the processes described herein, that exhibit enhanced hydrogen storage capacity when used as hydrogen storage systems.

Some embodiments of the disclosure provide a trace nickel-compounded layered magnesium composite material, a method for preparing the composite material, and use thereof. In some examples, the trace nickel-compounded layered magnesium composite material includes a nano-layered magnesium matrix and nano nickel. The nano nickel is distributed on a surface and between inner layers of the nano-layered magnesium matrix. In other examples, the nano-layered magnesium matrix in the composite material has a size of 10-20 nm, a layer thickness of 10-200 nm, and a layer spacing of 10-100 nm. The mass content of the nano nickel in the composite material is 2-6%. The nano nickel in the composite material has a particle size of 3-50 nm.

The present disclosure relates to improved processes for the preparation of metal hydrides. The present disclosure also relates to metal hydrides, e.g., metal hydrides prepared by the processes described herein, that exhibit enhanced hydrogen storage capacity when used as hydrogen storage systems.

An ultra-low-speed rotating low-strain high-filling-rate hydrogen alloy automatic absorption-desorption reaction device includes a shell, a hydrogen storage reaction bed, a motor, a controlling and monitoring system, a wire inlet port, a hydrogen absorption and desorption port, and a universal angle wheel. The reaction bed is circular, rotating at a low speed under driving of a light ultra-low speed motor; facades on two sides of the reaction bed are respectively provided with a transmission shaft and the hydrogen absorption and discharge port which are respectively connected with an ultra-low-speed gear reduction motor or a high-pressure hydrogen storage tank and a hydrogen-consuming device; the reaction bed includes a hydrogen storage metal alloy, a heat-conducting anti-hardening filling material, and a phase change material; a shell of the alloy reaction bed has a heater and an external side surface of a hydrogen storage alloy reaction device has a PLC controlling and monitoring system.

A hydrogen storage assembly includes at least one wafer formed of a substrate material that produces metal hydride when exposed to a hydrogen-rich carrier fluid. The wafer can be supported by a housing and arranged so that the hydrogen-rich carrier fluid can flow over a reaction surface of the wafer. At least one heating element can be arranged to transfer heat to the wafer to attain an operating temperature suitable for hydrogen charging on the reaction surface. A de-activation material may be provided on the reaction surface for inhibiting formation of surface oxide that impedes hydrogen absorption during charging and hydrogen desorption during discharging. The at least one wafer can include a plurality of monolithic plate wafers spaced apart about a central axis of the assembly. The at least one wafer can include a plurality of monolithic disc wafers in at least one stacked arrangement.

A hydrogen storage assembly includes at least one wafer formed of a substrate material that produces metal hydride when exposed to a hydrogen-rich carrier fluid. The wafer can be supported by a housing and arranged so that the hydrogen-rich carrier fluid can flow over a reaction surface of the wafer. At least one heating element can be arranged to transfer heat to the wafer to attain an operating temperature suitable for hydrogen charging on the reaction surface. A de-activation material may be provided on the reaction surface for inhibiting formation of surface oxide that impedes hydrogen absorption during charging and hydrogen desorption during discharging. The at least one wafer can include a plurality of monolithic plate wafers spaced apart about a central axis of the assembly. The at least one wafer can include a plurality of monolithic disc wafers in at least one stacked arrangement.