The present invention provides a method for producing an SiC single crystal, enabling obtaining an SiC single crystal substrate in which a screw dislocation-reduced region is ensured in a wide range, and an SiC single crystal substrate. The SiC single crystal substrate is produced using a seed crystal having an off angle in the off orientation from a {0001} plane by a production method wherein in advance of a growth main step of performing crystal growth to form a facet {0001} plane in the crystal peripheral part on the crystal end face having grown thereon the bulk silicon carbide single crystal and obtain more than 50% of the thickness of the obtained SiC single crystal, a growth sub-step of growing the crystal at a higher nitrogen concentration than in the growth main step and at a growth atmosphere pressure of 3.9 to 39.9 kPa and a seed crystal temperature of 2,100° C. to less than 2,300° C. is included.

A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.

Silicon-carbon composite materials and related processes are disclosed that overcome the challenges for providing amorphous nano-sized silicon entrained within porous carbon. Compared to other, inferior materials and processes described in the prior art, the materials and processes disclosed herein find superior utility in various applications, including energy storage devices such as lithium ion batteries.

Silicon-carbon composite materials and related processes are disclosed that overcome the challenges for providing amorphous nano-sized silicon entrained within porous carbon. Compared to other, inferior materials and processes described in the prior art, the materials and processes disclosed herein find superior utility in various applications, including energy storage devices such as lithium ion batteries.

Silicon-carbon composite materials and related processes are disclosed that overcome the challenges for providing amorphous nano-sized silicon entrained within porous carbon. Compared to other, inferior materials and processes described in the prior art, the materials and processes disclosed herein find superior utility in various applications, including energy storage devices such as lithium ion batteries.

Silicon-carbon composite materials and related processes are disclosed that overcome the challenges for providing amorphous nano-sized silicon entrained within porous carbon. Compared to other, inferior materials and processes described in the prior art, the materials and processes disclosed herein find superior utility in various applications, including energy storage devices such as lithium ion batteries.

In an embodiment, a system includes a three-dimensional (3D) printer, a feedstock, and a laser. The three-dimensional printer includes a platen including an inert metal, and an enclosure including an inert atmosphere. The feedstock is configured to be deposited onto the platen. The feedstock includes a halogenated solution and a nanoparticle having negative electron affinity. The laser is configured to induce the nanoparticle to emit solvated electrons into the halogenated solution to form, by reduction, a ceramic and a diatomic halogen.

In an embodiment, a system includes a three-dimensional (3D) printer, a feedstock, and a laser. The three-dimensional printer includes a platen including an inert metal, and an enclosure including an inert atmosphere. The feedstock is configured to be deposited onto the platen. The feedstock includes a halogenated solution and a nanoparticle having negative electron affinity. The laser is configured to induce the nanoparticle to emit solvated electrons into the halogenated solution to form, by reduction, a ceramic and a diatomic halogen.

A process of producing silicon-containing materials includes converting a gas to a superheated state in which it is at least partly in plasma form, and contacting the superheated gas with a silicon-containing first starting material to form a mixture including the gas and silicon, wherein the silicon-containing materials are produced by adding to the gas or the mixture a second starting material that can enter into a chemical reaction directly with the silicon in the mixture, or breaks down thermally on contact with the superheated gas and/or the mixture, and steps a. and b. are effected spatially separately from one another.

A process of producing silicon-containing materials includes converting a gas to a superheated state in which it is at least partly in plasma form, and contacting the superheated gas with a silicon-containing first starting material to form a mixture including the gas and silicon, wherein the silicon-containing materials are produced by adding to the gas or the mixture a second starting material that can enter into a chemical reaction directly with the silicon in the mixture, or breaks down thermally on contact with the superheated gas and/or the mixture, and steps a. and b. are effected spatially separately from one another.