In an embodiment, a system includes a three-dimensional (3D) printer, a neutral feedstock, a p-doped feedstock, an n-doped feedstock, and a laser. The 3D printer includes a platen and an enclosure. The platen includes an inert metal. The enclosure includes an inert atmosphere. The neutral feedstock is configured to be deposited onto the platen. The neutral feedstock includes a halogenated solution and a nanoparticle having a negative electron affinity. The p-doped feedstock is configured to be deposited onto the platen. The p-doped feedstock includes a boronated compound introduced to the neutral feedstock. The n-doped feedstock is configured to be deposited onto the platen. The n-doped feedstock includes a phosphorous compound introduced to the neutral feedstock. The laser is configured to induce the nanoparticle to emit solvated electrons into the halogenated solution to form, by reduction, layers of a ceramic comprising a neutral layer, a p-doped layer, and an n-doped layer.

Silicon-carbon composite materials and related processes are disclosed that overcome the challenges for providing amorphous nano-sized silicon entrained within porous carbon. Compared to other, inferior materials and processes described in the prior art, the materials and processes disclosed herein find superior utility in various applications, including energy storage devices such as lithium ion batteries.

Silicon-carbon composite materials and related processes are disclosed that overcome the challenges for providing amorphous nano-sized silicon entrained within porous carbon. Compared to other, inferior materials and processes described in the prior art, the materials and processes disclosed herein find superior utility in various applications, including energy storage devices such as lithium ion batteries.

The present invention relates to methods for preparing silicon carbide powder and single crystal silicon carbide and, more particularly, to a method for preparing silicon carbide powder including: providing a precursor gas onto a fibrous carbon body in a reactor to deposit silicon carbide (SiC) on the fibrous carbon body; recovering the silicon carbide deposited on the fibrous carbon body to obtain a first silicon carbide powder; and oxidizing the first silicon carbide powder, wherein a molecule of the precursor gas include a silicon atom and a carbon atom.

The present invention relates to methods for preparing silicon carbide powder and single crystal silicon carbide and, more particularly, to a method for preparing silicon carbide powder including: providing a precursor gas onto a fibrous carbon body in a reactor to deposit silicon carbide (SiC) on the fibrous carbon body; recovering the silicon carbide deposited on the fibrous carbon body to obtain a first silicon carbide powder; and oxidizing the first silicon carbide powder, wherein a molecule of the precursor gas include a silicon atom and a carbon atom.

The present invention relates to processes for making macromolecular networks, macromolecular networks made by such processes, and methods of using such macromolecular networks to make materials such as ceramics. The macromolecular network's formation rate is controlled by using two species of reactants each of which comprised one functionality. This results in decreased macromolecular network processing costs and superior products.

The present invention relates to processes for making macromolecular networks, macromolecular networks made by such processes, and methods of using such macromolecular networks to make materials such as ceramics. The macromolecular network's formation rate is controlled by using two species of reactants each of which comprised one functionality. This results in decreased macromolecular network processing costs and superior products.

A method for manufacturing predominantly amorphous silicon-containing particles includes a chemical compound of formula: Si.sub.(1−x)C.sub.x, where 0.005≤x<0.05. The particles, when subjected to XRD analysis applying unmonochromated CuKα radiation, exhibit one peak at around 28° and one peak at around 52°. Both peaks have a Full Width at Half Maximum of at least 5° when using Gaussian peak fitting. The method includes forming a homogeneous gas mixture of a first precursor gas of a silicon containing compound and at least one second precursor gas of a substitution element M containing compound, injecting the homogeneous gas mixture of the first and second precursor gases into a reactor space where the precursor gases are heated to a temperature in the range of from 700 to 900° C. so that the precursor gases react and form particles, and collecting and cooling the particles to a temperature in the range of from ambient temperature up to about 350° C. The relative amounts of the first and the second precursor gases are adapted such that the formed particles obtain an atomic ratio C: Si in the range of [0.005, 0.05).

A membrane sorbent is described, which comprises 1-6 wt % silicon carbide nanoparticles dispersed in a polymer matrix. The polymer matrix may comprise polysulfone and polyvinylpyrrolidone. The membrane sorbent is used for separating oil from a contaminated water mixture. The silicon carbide nanoparticles of the membrane sorbent may be made from rice husk ash.

The present invention provides a method for producing an SiC single crystal, enabling obtaining an SiC single crystal substrate in which a screw dislocation-reduced region is ensured in a wide range, and an SiC single crystal substrate. The SiC single crystal substrate is produced using a seed crystal having an off angle in the off orientation from a {0001} plane by a production method wherein in advance of a growth main step of performing crystal growth to form a facet {0001} plane in the crystal peripheral part on the crystal end face having grown thereon the bulk silicon carbide single crystal and obtain more than 50% of the thickness of the obtained SiC single crystal, a growth sub-step of growing the crystal at a higher nitrogen concentration than in the growth main step and at a growth atmosphere pressure of 3.9 to 39.9 kPa and a seed crystal temperature of 2,100° C. to less than 2,300° C. is included.