This invention in one aspect relates to a method of synthesizing a self-assembled mixed-dimensional heterostructure including 2D metallic borophene and 1D semiconducting armchair-oriented graphene nanoribbons (aGNRs). The method includes depositing boron on a substrate to grow borophene thereon at a substrate temperature in an ultrahigh vacuum (UHV) chamber; sequentially depositing 4,4″-dibromo-p-terphenyl on the borophene grown substrate at room temperature in the UHV chamber to form a composite structure; and controlling multi-step on-surface coupling reactions of the composite structure to self-assemble a borophene/graphene nanoribbon mixed-dimensional heterostructure. The borophene/aGNR lateral heterointerfaces are structurally and electronically abrupt, thus demonstrating atomically well-defined metal-semiconductor heterojunctions.

A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.

The present disclosure provides a method for preparing a powder material and an application thereof. The preparation method includes: obtaining an initial alloy ribbon including a matrix phase and a dispersed particle phase by solidifying an alloy melt, and then removing the matrix phase in the initial alloy ribbon while retaining the dispersed particle phase, so as to obtain a powder material composed of original dispersed particle phase. The preparation method of the present disclosure is simple in process and can prepare multiple powder materials of nano-level, sub-micron-level and micro-level. The powder materials have good application prospects in the fields such as catalytic materials, powder metallurgy, composite materials, wave-absorbing materials, sterilization materials, metal injection molding, 3D printing and coating.

A hydrogen storage composite material includes: a graphene oxide framework provided as a porous structure and having an average pore diameter of 1 to 2 nm; and the graphene oxide framework is impregnated with a metal hydride, the graphene oxide framework comprises: a graphene oxide; and a linker connecting the graphene oxide.

The present invention provides a radiation shielding material, particularly for shielding of particle radiation, comprising a fibre material and a radiation damping filler, wherein the amount of the radiation damping filler is 40 to 95 wt. % based on the dry weight of the radiation shielding material. The present invention further provides a radiation shielding structure, particularly for shielding of particle radiation, comprising a bottom layer and a top layer, wherein a hollow structure is sandwiched between the bottom layer and the top layer, wherein the hollow structure is filled with a radiation damping filler.

Disclosed is a method for preparing an elemental material by reduction using monoatomic carbon, comprising: in a melt medium at a temperature of from 300° C. to 1500° C., cracking an organic carbon source into atomic carbon and dissolving the atomic carbon in the melt medium, allowing the atomic carbon to reduce an elemental precursor compound present in the melt medium by an oxidation-reduction reaction to generate an elemental material, and obtaining the elemental material by supersaturating and crystallizing. The method of the present invention can prepare the elemental materials with high quality by self-crystallization growth at a lower temperature and at a lower cost.

One or more methods are described for extracting boron. The one or more methods include combining a combination comprising an alcohol, an organic solvent and boron, with an aqueous solution comprising an alkali hydroxide so as to form an organic layer and an aqueous layer. The aqueous layer may be separated from the organic layer.

A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.

A boron structure body includes boron having each concentration of Ti, Al, Fe, Cr, Ni, Co, Cu, W, Ta, Mo and Nb being 0.1 ppmw or less and having a thickness of 0.8 to 5 mm. The boron structure body may have a tubular shape, and when used as a doping agent, a ratio of .sup.11B that is an isotope may be 95 mass % or more. The boron structure body can be easily crushed, and a high-purity boron powder having an average particle diameter of 0.5 to 3 mm and having each metal impurity concentration of 0.3 ppmw or less can be obtained.

A multi-atomic layered material and methods of making and using the same are described. The material can include a first 2D non-carbon mono-element atomic layer, a second 2D non-carbon mono-element atomic layer, and intercalants positioned between the first and second atomic layers.