The invention relates to Chevrel-phase materials and methods of preparing these materials utilizing a precursor approach. The Chevrel-phase materials are useful in assembling electrodes, e.g., cathodes, for use in electrochemical cells, such as rechargeable batteries. The Chevrel-phase materials have a general formula of Mo.sub.6Z.sub.8 (Z=sulfur) or Mo.sub.6Z.sup.1.sub.8-yZ.sup.2.sub.y (Z.sup.1=sulfur; Z.sup.2=selenium), and partially cuprated Cu.sub.1Mo.sub.6S.sub.8 as well as partially de-cuprated Cu.sub.1-xMg.sub.xMo.sub.6S.sub.8 and the precursors have a general formula of M.sub.xMo.sub.6Z.sub.8 or M.sub.xMo.sub.6Z.sup.1.sub.8-yZ.sup.2.sub.y, M=Cu. The cathode containing the Chevrel-phase material in accordance with the invention can be combined with a magnesium-containing anode and an electrolyte.

The invention relates to Chevrel-phase materials and methods of preparing these materials utilizing a precursor approach. The Chevrel-phase materials are useful in assembling electrodes, e.g., cathodes, for use in electrochemical cells, such as rechargeable batteries. The Chevrel-phase materials have a general formula of Mo.sub.6Z.sub.8 (Z=sulfur) or Mo.sub.6Z.sup.1.sub.8-yZ.sup.2.sub.y (Z.sup.1=sulfur; Z.sup.2=selenium), and partially cuprated Cu.sub.1Mo.sub.6S.sub.8 as well as partially de-cuprated Cu.sub.1-xMg.sub.xMo.sub.6S.sub.8 and the precursors have a general formula of M.sub.xMo.sub.6Z.sub.8 or M.sub.xMo.sub.6Z.sup.1.sub.8-yZ.sup.2.sub.y, M=Cu. The cathode containing the Chevrel-phase material in accordance with the invention can be combined with a magnesium-containing anode and an electrolyte.

The present invention relates to a chalcogenide device and particularly to a metal chalcogenide device using transition metal chalcogenides as electrodes and a production method therefor. The metal chalcogenide device according to the present invention may comprise: a substrate; an oxide layer positioned on the substrate; a first conductive metal chalcogenide layer positioned on the oxide layer; and first and second electrodes, which are positioned apart from one another on the metal chalcogenide layer and comprise metal chalcogenides.

A method of synthesis of two-dimensional (2D) nanoflakes comprises the cutting of prefabricated nanoparticles. The method allows high control over the shape, size and composition of the 2D nanoflakes, and can be used to produce material with uniform properties in large quantities. Van der Waals heterostructure devices are prepared by fabricating nanoparticles, chemically cutting the nanoparticles to form nanoflakes, dispersing the nanoflakes in a solvent to form an ink, and depositing the ink to form a thin film.

A method of synthesis of two-dimensional (2D) nanoflakes comprises the cutting of prefabricated nanoparticles. The method allows high control over the shape, size and composition of the 2D nanoflakes, and can be used to produce material with uniform properties in large quantities. Van der Waals heterostructure devices are prepared by fabricating nanoparticles, chemically cutting the nanoparticles to form nanoflakes, dispersing the nanoflakes in a solvent to form an ink, and depositing the ink to form a thin film.

Processes for forming Mo and W containing thin films, such as MoS.sub.2, WS.sub.2, MoSe.sub.2, and WSe.sub.2 thin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.

The present invention provides a laminate structure in which the properties of a single-walled CNT, which are susceptible to surrounding environment, are stabilized by protecting the surface of the single-walled CNT with a proper substance, and/or another property is imparted to the single-walled CNT. The present invention provides a structure which comprises a first single-walled carbon nanotube having a length of 50 nm or longer, preferably 100 nm or longer, and a second layer laminated on the first single-walled carbon nanotube, wherein the second layer comprises at least one substance selected from the group A consisting of first boron nitride, first transition metal dichalcogenide, second carbon, first black phosphorus and first silicon.

A porous membrane comprising stacked layers of nanosheets, each nanosheet comprising one to three atomic layers of a 2D material comprising or consisting of one or more transition metal dichalcogenides is provided. The nanosheets have pores and the membrane comprises a network of water permeation pathways including through-pathways formed by the pores, horizontal pathways formed by gaps between the layers, and vertical pathways formed by gaps between adjacent nanosheets and stacking defects between the layers. Also provided is a method for making the membrane.

A porous membrane comprising stacked layers of nanosheets, each nanosheet comprising one to three atomic layers of a 2D material comprising or consisting of one or more transition metal dichalcogenides is provided. The nanosheets have pores and the membrane comprises a network of water permeation pathways including through-pathways formed by the pores, horizontal pathways formed by gaps between the layers, and vertical pathways formed by gaps between adjacent nanosheets and stacking defects between the layers. Also provided is a method for making the membrane.

The present embodiments relate to a method for manufacturing a two-dimensional material using a top-down method, the method includes the steps of preparing a bulk crystal, forming a metal layer on the bulk crystal, and then attaching a thermal release tape on the metal layer, exfoliating a two-dimensional material to which the metal layer and the thermal release tape have been attached from the bulk crystal, transferring the two-dimensional material to which the metal layer and the thermal release tape have been attached onto a substrate, and removing the thermal release tape and the metal layer from the substrate onto which the two-dimensional material has been transferred.