A process for manufacturing an electrochromic glazing unit includes forming, on one face of a glass sheet, a complete all-solid-state electrochromic stack including in succession a first layer of a transparent conductive oxide; a layer of a cathodically colored mineral electrochromic material to form an electrochromic electrode; a layer of an ionically conductive mineral solid electrolyte; a layer of a cation intercalation material to form a counter electrode; and a second layer of a transparent conductive oxide; then heat treatment of the complete electrochromic stack by irradiation with radiation having a wavelength comprised between 500 and 2000 nm, the radiation originating from a radiating device placed facing the electrochromic stack, a relative movement being created between the radiating device and the substrate so as to raise the electrochromic stack to a temperature at least equal to 300° C. for a brief duration, for example shorter than 100 milliseconds.

A glass includes from 42 mol % to 47 mol % P.sub.2O.sub.5, from 42 mol % to 48 mol % CuO, and from greater than 0 mol % to 15 mol % Fe.sub.2O.sub.3. The glass is an amorphous, single-phase glass. Methods of making a glass article include heating batch materials to a melting temperature from 900° C. to 1350° C. In aspects, methods include pouring the molten glass in an inert gaseous environment, and cooling the molten glass in the inter gaseous environment. In aspects, methods include cooling the molten glass to form the glass article and annealing the glass article without growing crystals in or on the glass article during the cooling or the annealing.

A glass includes from 42 mol % to 47 mol % P.sub.2O.sub.5, from 42 mol % to 48 mol % CuO, and from greater than 0 mol % to 15 mol % Fe.sub.2O.sub.3. The glass is an amorphous, single-phase glass. Methods of making a glass article include heating batch materials to a melting temperature from 900° C. to 1350° C. In aspects, methods include pouring the molten glass in an inert gaseous environment, and cooling the molten glass in the inter gaseous environment. In aspects, methods include cooling the molten glass to form the glass article and annealing the glass article without growing crystals in or on the glass article during the cooling or the annealing.

A method of forming a glass sheet comprises: (a) forming a ribbon of glass from molten glass with a pair of forming rollers; (b) reducing horizontal temperature variability of the ribbon of glass to be 10° C. or less across 80 percent of an entire width of the ribbon of glass before the ribbon of glass cools to a glass transition temperature; (c) controlling a cooling rate of the ribbon of glass while the ribbon of glass moves vertically downward within a setting zone such that the ribbon of glass has a first average cooling rate before the ribbon of glass cools to the glass transition temperature and a second average cooling rate after the ribbon of glass cools to the glass transition temperature, the first average cooling rate being less than the second average cooling rate; and (d) separating a glass sheet from the ribbon of glass.

Provided is a dental bulk block comprising a crystalline phase includes lithium disilicate as a main crystalline phase and eucryptite as a sub-crystalline phase in an amorphous glass matrix that is a functionally graded material having a main crystalline size gradient with respect to the depth thereof, and having no interface at the point of change in the main crystalline size gradient value, and is useful for manufacturing artificial teeth having structural characteristics similar to those of natural teeth, is facile to machine into an artificial tooth prosthesis due to the inclusion of eucryptite as the sub-crystalline phase compared to when only lithium disilicate exists, and can not only shorten the manufacturing time, but also increase the structural stability in terms of force distribution through functional grading of mechanical properties.

The present invention provides an imprint method of performing a forming process which includes supplying an imprint material on a substrate and then forming a pattern of the imprint material on the substrate by using a mold, the method comprising: dispensing, on the substrate, an adhesion material to bring the substrate and the imprint material into tight contact with each other; performing a first annealing process of heating and cooling the substrate on which the adhesion material has been dispensed; conveying the substrate to which the first annealing process has been performed; performing a second annealing process of heating and cooling the substrate which has been conveyed in the conveying; and performing the forming process on the substrate to which the second annealing process has been performed.

The present disclosure relates to a quantum dot-doped glass and method of making the same. A quantum dot-doped glass includes glass including quantum dots in an internal structure of the glass. The quantum dots within the glass have a photoluminescence quantum yield of greater than or equal to 10%.

The present disclosure relates to a quantum dot-doped glass and method of making the same. A quantum dot-doped glass includes glass including quantum dots in an internal structure of the glass. The quantum dots within the glass have a photoluminescence quantum yield of greater than or equal to 10%.

A tooling for forming a sheet of glass includes a forming die made of electrically conductive material and a heating unit, distant from the forming die. The forming die includes a molding surface, a support to hold a sheet of glass away from and opposite the molding surface, and an induction circuit having an inductor extending in a cavity in the forming die. The heating unit includes a surface configured to produce thermal radiation opposite the molding surface, and an induction circuit having an inductor extending in a cavity of the heating unit. A connector connects the induction circuits to a high-frequency current generator.

The invention relates to a method for annealing of at least two wafers bonded via low-temperature direct bonding comprising heating the bonded wafers up to a first annealing temperature in the range of 100° C. to 500° C., preferably 150° C. to 400° C., even more preferred 150° C. to 200° C., holding the first annealing temperature in a range of 1 to 4 hours, preferably 1 to 3 hours, cooling down the bonded wafers to room temperature, re-heating the bonded wafers to a second annealing temperature in the range of 100° C. to 500° C., preferably 150° C. to 400° C., even more preferred 150° C. to 200° C., and cooling down the bonded wafers to room temperature.