A powder intended for the manufacture of a sintered dental article, The powder has a chemical analysis such that, as weight percentages based on the oxides: Al.sub.2O.sub.3: 0.2%, oxides other than ZrO.sub.2, HfO.sub.2, Yb.sub.2O.sub.3, Y.sub.2O.sub.3 and Al.sub.2O.sub.3: <0.5%, and ZrO.sub.2+HfO.sub.2+Yb.sub.2O.sub.3+Y.sub.2O.sub.3: balance to 100%, with HfO.sub.2<2%. The contents of Yb.sub.2O.sub.3 and Y.sub.2O.sub.3, as molar percentages based on the sum of ZrO.sub.2, HfO.sub.2, Yb.sub.2O.sub.3 and Y.sub.2O.sub.3, being such that Yb.sub.2O.sub.3≥1%, 0.5%≤Y.sub.2O.sub.3<2%, and Yb.sub.2O.sub.3+Y.sub.2O.sub.3≤5.5%. The powder has a specific surface area of greater than or equal to 5 m.sup.2/g and less than or equal to 16 m.sup.2/g. The powder has a median size of greater than or equal to 0.1 μm and less than or equal to 0.7 μm.

A polycrystalline cubic boron nitride includes a cubic boron nitride particle group. The ratio of a second length to a first length is 0.99 or less. Here, each of the first length and the second length is a value measured on a surface of the polycrystalline cubic boron nitride with an indentation formed by a Knoop hardness test under conditions specified in ISO4545-1 and ISO4545-4. The second length represents the length of the longer diagonal of the indentation. The first length represents the sum of the second length and the length of the streaky indentation.

A multilayer electronic component includes a body including a dielectric layer and an internal electrode; and an external electrode disposed on the body and connected to the internal electrode, wherein the dielectric layer includes first and second grains, wherein the first grain has a core-shell structure including a shell having an atomic ratio of 2*Sn/(Ba+Ti+Sn) or 2*Hf/(Ba+Ti+Hf) to be 1.0% or more and 5.0% or less, and a core having an atomic ratio of 2*Sn/(Ba+Ti+Sn) and 2*Hf/(Ba+Ti+Hf) to be less than 1.0%, and the second grain has an atomic ratio of 2*Sn/(Ba+Ti+Sn) and 2*Hf/(Ba+Ti+Hf) to be less than 1.0%, and wherein an area occupied by the first grain in an entire area of the first and second grains is 28.3-82.3%.

The invention relates to a copper-ceramic composite, comprising a ceramic substrate, which contains aluminum oxide, a coating on the ceramic substrate made of copper or a copper alloy, wherein the aluminum oxide has an average grain form factor R.sub.a(Al.sub.2O.sub.3), determined as an arithmetic average value from the form factors of the grains of the aluminum oxide, the copper or the copper alloy has an average grain form factor R.sub.a(Cu), determined as an arithmetic average of the form factors of the grains of the copper or copper alloy, and the average grain form factors of the aluminum oxide and copper or copper alloy meet the following condition: 0.5≤R.sub.a(Al.sub.2O.sub.3)/R.sub.a(Cu)≤2.0.

Disclosed is a polycrystalline ceramic dielectric comprising: crystal grain bulks made of a barium titanate-based ceramic; and grain boundaries comprising interfaces between the crystal grain bulks, wherein the composition of the grain boundaries is controlled using dopants. By controlling the grain boundary composition using dopants so that the dopants are distributed across a width of 5 nm or less and using a nano-sized, fine-grained barium titanate-based ceramic precursor, the grain boundary structure within the polycrystals may maintain electroneutrality, and their ferroelectricity may be controlled, thereby allowing for smoother polarization reaction. Accordingly, the present disclosure provides polycrystalline ceramic dielectrics that have dielectric properties such as high permittivity and low dielectric losses in a wide frequency range, a small amount of reduction in electric field-dependent relative permittivity, high temperature stability, non-reducibility under a reduction sintering condition, and resulting high insulation resistance, and a preparation method therefor.

This disclosure relates to a polycrystalline diamond (PCD) body comprising a PCD material formed of intergrown diamond grains forming a diamond network, and an iron-containing binder.

According to one embodiment, a semiconductor manufacturing apparatus member is used inside a chamber of a semiconductor manufacturing apparatus. The member includes a composite structure. The composite structure includes a base material and a ceramic layer. The ceramic layer includes a first part located on a surface of the base material and is exposed. The composite structure includes a through-hole extending through the base material and the ceramic layer. The through-hole extends in a first direction. The through-hole includes a first hole region, a second hole region and a third hole region. The first hole region is continuous with a surface of the first part. The third hole region is positioned between the first hole region and the second hole region in the first direction. A hardness of the third hole region is greater than a hardness of the first hole region.

A dielectric composition includes a main ingredient having a perovskite structure represented by ABO.sub.3, where A is at least one of Ba, Sr, and Ca and B is at least one of Ti, Zr, and Hf, and a first accessory ingredient. The first accessory ingredient comprises 0.1 mole or more of a rare earth element, 0.02 mole or more of Nb, and 0.25 mole or more and 0.9 mole or less of Mg, a sum of contents of the rare earth element and Nb is 1.5 mole or less.

The present invention provides a method for producing a zirconia particle-containing powder that enables easy production of a zirconia sintered body having both high translucency and high strength. The present invention relates to a method for producing a zirconia particle-containing powder, comprising a drying step of spray drying a slurry containing zirconia particles, wherein the zirconia particles have an average primary particle diameter of 30 nm or less, and the slurry comprises a dispersion medium containing a liquid having a surface tension at 25° C. of 50 mN/m or less. Preferably, the zirconia particles comprise 2.0 to 9.0 mol % yttria. Preferably, wherein the content of the liquid in the dispersion medium is 50 mass % or more.

A ceramic electronic device includes a multilayer structure in which a plurality of dielectric layers and a plurality of internal electrode layers are alternately stacked. Each of the plurality of dielectric layers includes ceramic grains of a main component thereof expressed by (Ba.sub.1−x−yCa.sub.xSr.sub.y)(Ti.sub.1−zZr.sub.z)O.sub.3 (0<x≤0.2, 0≤y≤0.1, 0≤z≤0.1). D3<D1<D2 is satisfied when an average grain diameter of the ceramic grains of the main component of the plurality of dielectric layers in a section in which each two internal electrode layers is D1, an average grain diameter of the ceramic grains of the main component of first dielectric layers which are located at different height positions from the internal electrode layers is D2, an average grain diameter of the ceramic grains of the main component of second dielectric layers which are located at same height positions of the internal electrode layers is D3.