Sintered product having a relative density of greater than 90%, with, to more than 80% of the volume thereof, a stack of flat ceramic platelets, the assembly of the platelets having a mean thickness of less than 3 μm, having a width of greater than 50 mm, and including more than 20% of alumina, as a percentage on the basis of the weight of the product. The width of the product is the largest dimension measured in the plane in which the length of the product is measured, along a direction perpendicular to the direction of the length. The length of the product is the largest dimension thereof in a plane parallel to the general plane in which the platelets extend.

Setter plates are fabricated from Li-stuffed garnet materials having the same, or substantially similar, compositions as a garnet Li-stuffed solid electrolyte. The Li-stuffed garnet setter plates, set forth herein, reduce the evaporation of Li during a sintering treatment step and/or reduce the loss of Li caused by diffusion out of the sintering electrolyte. Li-stuffed garnet setter plates, set forth herein, maintain compositional control over the solid electrolyte during sintering when, upon heating, lithium is prone to diffuse out of the solid electrolyte.

A composite polycrystal contains polycrystalline diamond formed of diamond grains that are directly bonded mutually, and compressed graphite dispersed in the polycrystalline diamond.

The invention relates to a method for preparing a material based on an aluminosilicate selected from barium aluminosilicate BAS, barium-strontium aluminosilicate BSAS, and strontium aluminosilicate SAS, said aluminosilicate consisting of aluminosilicate with a hexagonal structure, characterised in that it includes a single sintering step in which a mixture of powders of precursors of said aluminosilicate, including an aluminium hydroxide Al(OH).sub.3 powder, are sintered by a hot-sintering technique with a pulsed electric field SPS; whereby a material based on an aluminosilicate, said aluminosilicate consisting of an aluminosilicate with a hexagonal structure is obtained. The material based on an aluminosilicate prepared by said method can be used in a method for preparing a composite material consisting of an aluminosilicate matrix reinforced by reinforcements made of metalloid or metal oxide.

A multilayer electronic component that includes a stacked body having therein a plurality of dielectric layers including a CZ-based perovskite phase and an element M1, a plurality of internal electrode layers including Cu, and an interface layer including the element M1 in at least a portion of an interface with the plurality of internal electrode layers. Element M1 is an element that has a binding energy between CZ and Cu via the element M1 of less than or equal to −9.8 eV by first-principles calculation using a pseudopotential method. When amounts of elements included in the dielectric layers are expressed as parts by mol, a ratio m1 of an amount of the element M1 to an amount of the Zr in the interface layer is 0.03≤m1≤0.25.

A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.

The present invention aims to provide a lithium ion-conducting oxide capable of providing a solid electrolyte with an excellent ion conductivity, and a solid electrolyte, a sintered body, an electrode material or an electrode and an all-solid-state battery using the same. The lithium ion-conducting oxide of the present invention includes at least lithium, tantalum, phosphorus, silicon, and oxygen as constituent elements, has a peak in a region of −20.0 ppm to 0.0 ppm on the solid-state .sup.31P-NMR spectrum, and has a peak in a range of −80.0 ppm to −100.0 ppm on the solid-state .sup.29Si-NMR spectrum.

According to an aspect of the invention, there is provided a plasma-resistant member including: a base member; and a layer structural component formed at a surface of the base member, the layer structural component including an yttria polycrystalline body and being plasma resistant, the layer structural component including a first uneven structure, and a second uneven structure formed to be superimposed onto the first uneven structure, the second uneven structure having an unevenness finer than an unevenness of the first uneven structure.

A cubic boron nitride sintered material includes: to 98 volume % of cubic boron nitride grains; and a binder phase, wherein the binder phase includes at least one selected from a group consisting of one or more first compounds and a solid solution originated from the first compounds, the cubic boron nitride grains include, on number basis, more than or equal to 50% of cubic boron nitride grains each having an equivalent circle diameter of more than 0.5 μm, and includes, on number basis, less than or equal to 50% of cubic boron nitride grains each having an equivalent circle diameter of more than 2 μm, and when a mass of the cubic boron nitride grains is assumed as 100 mass %, a total content of lithium, magnesium, calcium, strontium, beryllium, and barium in the cubic boron nitride grains is less than 0.001 mass %.

A capacitor body includes a plurality of dielectric layers and a plurality of internal electrode layers stacked alternately. The plurality of dielectric layers include crystal grains of barium titanate, a rare earth element, and silicon. The crystal grains include a first crystal grain and a second crystal grain. The crystal grains each include a surface layer as a shell and an interior portion surrounded by the shell as a core. The first crystal grain has a higher concentration distribution of the rare earth element in the shell than in the core. The second crystal grain has distribution in which a ratio of a concentration of the silicon in the core and the shell is lower than a ratio of a concentration of the rare earth element in the core and the shell in the first crystal grain.